ETC YG811S09R

YG811S09R
(90V / 5A TO-22OF15)
Outline Drawings
SCHOTTKY BARRIER DIODE
10.5±0.5
ø3.2
4.5±0.2
+0.2
-0.1
Features
Low VF
Super high speed switching.
High reliability by planer design.
15±0.3
1.2±0.2
13Min
3.7±0.2
2.7±0.2
6.3
2.7±0.2
0.7±0.2
0.6±0.2
2.7±0.2
5.08±0.4
JEDEC
EIAJ
Applications
High speed power switching.
SC-67
Connection Diagram
Maximum Ratings and Characteristics
3
1
Absolute Maximum Ratings
Item
Symbol
Repetitive peak reverse voltage
VRRM
Repetitive peak surge reverse voltage
VRSM
Isolating voltage
Viso
Average output current
IO
Suege current
IFSM
Operating junction temperature
Storage temperature
Conditions
Rating
Unit
90
V
100
V
1500
V
5
A
80
A
Tj
-40 to +150
°C
Tstg
-40 to +150
°C
Max.
Unit
tw=500ns, duty=1/40
Terminals to Case,
AC. 1min.
duty=1/2, Tc=116°C
Rectangl wave
Sine wave 10ms
Electrical Characteristics (Ta=25°C Unless otherwise specified )
Item
Symbol
Conditions
Forward voltage drop
VF
IF=4.0A
0.9
V
Reverse current
IR
VR=VRRM
5.0
mA
Thermal resistance
Rth(j-c)
Junction to case
5.0
°C/W
Mechanical Characteristics
Mounting torque
Weight
Recommended torque
0.3 to 0.5
2.3
N·m
g
A-348
(90V / 5A TO-22OF15)
YG811S09R
Characteristics
Forward Characteristic (typ.)
2
Reverse Characteristic (typ.)
10
o
Tj=150 C
Tj=150
o
Forward Current
Tj=125
Tj=100
(mA)
10
C
o
o
Tj=100 C
C
o
Reverse Current
(A)
o
Tj=125 C
1
10
C
o
Tj=25 C
1
0
10
-1
10
o
Tj=25 C
IR
IF
-2
-3
0.0
0.2
0.4
0.6
VF
1.2
1.4
1.6
Forward Voltage
1.8
10
2.0
λ
6
360°
5
o
Square wave λ=60
o
Square wave λ=120
o
Sine wave λ=180
o
Square wave λ=180
DC
4
3
2
PR
WF
1
Per 1element
0
0.0
0.5
Io
160
1.0
1.5
2.0
2.5
3.0
3.5
4.0
Average Forward Current
4.5
5.0
30
40
50
60
70
80
Reverse Voltage
90
DC
18
360°
16
VR
14
α
12
10
α=180
6
4
2
1000
10
20
30
40
50
60
70
Reverse Voltage
80
Sine wave λ=180
o
Square wave λ=180
o
110
Square wave λ=120
o
100
360°
λ
Io
90
Square wave λ=60
o
Junction Capacitance Characteristic
(typ.)
100
VR=50V
Cj
80
10
70
0
1
Io
2
3
4
5
6
Average Output Current
7
(A)
λ :Conduction angle of forward current for each rectifier element
Io:Output current of center-tap full wave connection
8
90
(V)
(pF)
Junction Capacitance
120
o
8
VR
DC
130
100 110
(V)
Reverse Power Dissipation
0
Current Derating (Io-Tc)
o
( C)
20
(A)
140
Case Temperature
20
0
5.5
150
Tc
10
VR
Io
7
0
(V)
(W)
(W)
1.0
Forward Power Dissipation
8
Forward Power Dissipation
0.8
Reverse Power Dissipation
0.1
10
10
VR
100
Reverse Voltage
(V)
100
YG811S09R
Surge Capability
1000
Peak Half - Wave Current
(A)
(90V / 5A TO-22OF15)
I FSM
100
10
1
10
100
Number of Cycles at 50Hz
2
Transient Thermal Impedance
Transient Thermal Impedance
o
( C/W)
10
10
10
10
1
0
-1
10
-3
10
-2
10
t
-1
10
Time
0
(sec.)
10
1
10
2