FUJI YG831C03R

YG831C03R
(30V / 5A TO-22OF15)
Outline Drawings
SCHOTTKY BARRIER DIODE
10±0.5
ø3.2
4.5±0.2
+0.2
-0.1
2.7±0.2
13Min
3.7±0.2
1.2±0.2
Features
Low VF
Super high speed switching.
High reliability by planer design.
15±0.3
6.3
2.7±0.2
0.6
2.54±0.2
2.7±0.2
JEDEC
EIAJ
Applications
+0.2
-0
0.7±0.2
SC-67
Connection Diagram
High speed power switching.
2
Maximum Ratings and Characteristics
1
3
Absolute Maximum Ratings
Item
Symbol
Repetitive peak reverse voltage
VRRM
Repetitive peak surge reverse voltage
VRSM
Isolation voltage
Viso
Average output current
IO
Surge current
IFSM
Operating junction temperature
Tj
Storage temperature
Tstg
Conditions
tw=500ns, duty=1/40
Terminals to Case,
AC. 1min.
duty=1/2, Tc=130°C
Square wave
Sine wave 10ms
Symbol
Unit
30
V
35 *1
V
1500
5*
Conditions
V
A
100
A
+150
°C
-40 to +150
Electrical Characteristics (Ta=25°C Unless otherwise specified )
Item
Rating
°C
* Out put current of centertap full wave connection.
*1 : Tentative
Max.
Unit
Forward voltage drop **
VF
IF=2.0A
0.45
V
Reverse current **
IR
VR=VRRM
5.0
mA
Thermal resistance
Rth(j-c)
Junction to case
5.0
°C/W
** Rating per element
Mechanical Characteristics
Mounting torque
Weight
Recommended torque
0.3 to 0.5
2.3
N·m
g
(30V / 5A TO-22OF15)
YG831C03R
Characteristics
Forward Characteristic (typ.)
Reverse Characteristic (typ.)
1
o
Tj=150 oC
Tj=125 C
o
Tj=100 C
o
Tj=25 C
IR
IF
0.01
0.0
0.1
0.2
0.3
2.0
0.4
0.5
0.6
0.7
Forward Voltage
0.8
0.9
Tj=125 C
10
1
o
Tj=100 C
10
10
10
10
1.0
0
o
-1
Tj=25 C
-2
-3
0
5
10
VR
(V)
Forward Power Dissipation
15
20
25
30
35
Reverse Voltage (V)
Reverse Power Dissipation
Io
1.6
360°
1.4
1.2
o
Square wave λ=60
o
Square wave λ=120
1.0
o
Sine wave λ =180
o
Square wave λ =180
DC
0.8
360°
5.5
DC
5.0
λ
Reverse Power Dissipation
1.8
(W)
6.0
0.6
0.4
VR
4.5
α
4.0
3.5
3.0
2.5
2.0
α =180
o
1.5
1.0
0.2
Per 1element
0.0
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6
Io
160
Average Forward Current
PR
(W)
VF
Forward Power Dissipation
o
Tj=150 C
o
0.1
WF
2
10
Reverse Current (mA)
Forward Current
(A)
10
0.5
0.0
0
(A)
2
4
6
8 10 12 14 16 18 20 22 24 26 28 30 32
VR
Reverse Voltage
(V)
Junction Capacitance Characteristic
(typ.)
Current Derating (Io-Tc)
140
DC
135
Sine wave λ=180
o
130
Square wave λ=180
o
125
Square wave λ=120
o
120
115
Square wave λ=60
360°
λ
Io
o
110
1000
100
Cj
Case Temperature
Tc
145
Junction Capacitance (pF)
150
o
( C)
155
VR=20V
105
100
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0
Io
Average Output Current
(A)
λ:Conduction angle of forward current for each rectifier element
Io:Output current of center-tap full wave connection
10
10
VR
Reverse Voltage
100
(V)
YG831C03R
(30V / 5A TO-22OF15)
Surge Capability
100
I FSM
Peak Half - Wave Current
(A)
1000
10
1
10
100
Number of Cycles at 50Hz
2
Transient Thermal Impedance
Transient Thermal Impedance
o
( C/W)
10
1
10
0
10
-1
10
-3
10
-2
-1
10
0
10
t
10
Time
1
10
2
10
(sec.)
Fuji Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX 75370 - 972-733-1700 - www.fujisemiconductor.com