DIODES ZHB6718

SM-8 BIPOLAR TRANSISTOR H-BRIDGE
ZHB6718
PRELIMINARY DATA SHEET ISSUE B - JULY 1997
FEATURES
* Compact package
* Low on state losses
* Low drive requirements
* Operates up to 20V supply
* 2.5 Amp continuous rating
SM-8
(8 LEAD SOT223)
PARTMARKING DETAIL – ZHB6718
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
NPNs
PNPs
UNIT
Collector-Base Voltage
VCBO
20
-20
V
Collector-Emitter Voltage
VCEO
20
-20
V
Emitter-Base Voltage
VEBO
5
-5
V
Peak Pulse Current
ICM
Continuous Collector Current
IC
6
-6
A
2.5
-2.5
A
Operating and Storage Temperature Range Tj:Tstg
-55 to +150
°C
CONNECTION DIAGRAM
SCHEMATIC DIAGRAM
C3, C4
Q2
Q3
E2, E3
B3
4
3
B2
2
B4
C1, C2
B2
C3,C4
B1
E2,E3
1
B4
5
Q4
7
Q1
E1,E4
8
B1
C1,C2
6
E1, E4
B3
ZHB6718
THERMAL CHARACTERISTICS
PARAMETER
SYMBOL
Total Power Dissipation at Tamb = 25°C*
Any single transistor “on”
Q1 and Q3 “on” or Q2 and Q4 “on” equally
Ptot
Derate above 25°C*
Any single transistor “on”
Q1 and Q3 “on” or Q2 and Q4 “on” equally
Thermal Resistance - Junction to Ambient*
Any single transistor “on”
Q1 and Q3 “on” or Q2 and Q4 “on” equally
100
tP
W
W
10
16
mW/ °C
mW/ °C
100
62.5
°C/ W
°C/ W
tP
40
D=1
D=0.5
D=0.2
D=0.1
D=0.05
Single Pulse
40
20
1ms
1.25
2
10ms 100ms
1s
10s
Pulse Width
100s
30
D=1
D=0.5
D=0.2
D=0.1
D=0.05
Single Pulse
20
10
0
100us
1ms
10ms 100ms
1s
Pulse Width
10s
100s
Transient Thermal Resistance
Q1 and Q3 or Q2 and Q4 "On"
Transient Thermal Resistance
Single Transistor "On"
2.0
D=t1
tP
t1
50
60
0
100us
UNIT
60
D=t1
tP
t1
80
Rth(j-amb)
VALUE
10
1.5
Two devices on †
Full Copper
1
1.0
Minimum Copper
Single device on
Two devices on †
Single device on
0.5
0
0
20
40
60
80
100
120
T - Temperature (°C)
Derating curve
140 160
0.1
0.1
1
Pcb Area (inches squared)
10
Pd v PCB Area Comparison
* The power which can be dissipated assuming the device is mounted in a typical manner on a PCB
with copper equal to 2 inches square.
† “Two devices on” is the standard operating condition for the bridge. Eg opposing NPN/PNP pairs
turned on.
ZHB6718
NPN TRANSISTORS
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C ).
PARAMETER
SYMBOL
Collector-Base
Breakdown Voltage
V(BR)CBO
20
100
V
IC=100µA
Collector-Emitter
Breakdown Voltage
V(BR)CEO
20
27
V
IC=10mA*
5
8.3
V
IE=100µA
Emitter-Base Breakdown V(BR)EBO
Voltage
Collector Cut-Off Current
MIN.
TYP.
MAX. UNIT
CONDITIONS.
ICBO
100
nA
VCB=16V
Emitter Cut-Off Current
IEBO
100
nA
VEB=4V
Collector Emitter Cut-Off
Current
ICES
100
nA
VCES=16V
Collector-Emitter
Saturation Voltage
VCE(sat)
8
70
130
15
150
200
mV
mV
mV
IC=0.1A, IB=10mA*
IC=1A, IB=10mA*
IC=2.5A, IB=50mA*
Base-Emitter
Saturation Voltage
VBE(sat)
0.89
1.0
V
IC=2.5A, IB=50mA*
Base-Emitter Turn-On
Voltage
VBE(on)
0.79
V
IC=2.5A, VCE=2V*
Static Forward Current
Transfer
Ratio
hFE
200
300
200
400
450
360
180
Transition
Frequency
fT
100
140
IC=10mA, VCE=2V*
IC=100mA, VCE=2V*
IC=2A, VCE=2V*
IC=6A, VCE=2V*
MHz
IC=50mA, VCE=10V
f=100MHz
Output Capacitance
Cobo
23
pF
VCB=10V, f=1MHz
Turn-On Time
t(on)
170
ns
Turn-Off Time
t(off)
400
ns
VCC=10V, IC=1A
IB1=-IB2=10mA
30
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%.
ZHB6718
PNP TRANSISTORS
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C ).
PARAMETER
SYMBOL
Collector-Base
Breakdown Voltage
V(BR)CBO
-20
-65
V
IC=-100µA
Collector-Emitter
Breakdown Voltage
V(BR)CEO
-20
-55
V
IC=-10mA*
-5
-8.8
V
IE=-100µA
Emitter-Base Breakdown V(BR)EBO
Voltage
MIN.
TYP.
MAX. UNIT
CONDITIONS.
Collector Cut-Off Current
ICBO
-100
nA
VCB=-15V
Emitter Cut-Off Current
IEBO
-100
nA
VEB=-4V
Collector Emitter Cut-Off
Current
ICES
-100
nA
VCES=-15V
Collector-Emitter
Saturation Voltage
VCE(sat)
-16
-130
-190
-40
-200
-260
mV
mV
mV
IC=-100mA, IB=-10mA*
IC=-1A, IB=-20mA*
IC=-2.5A, IB=-200mA*
Base-Emitter
Saturation Voltage
VBE(sat)
-0.98
-1.1
V
IC=-2.5A, IB=-200mA*
Base-Emitter Turn-On
Voltage
VBE(on)
0.85
V
IC=-2.5A, VCE=-2V*
Static Forward Current
Transfer
Ratio
hFE
300
300
150
35
475
450
230
70
30
Transition
Frequency
fT
150
180
IC=-10mA, VCE=-2V*
IC=-100mA, VCE=-2V*
IC=-2A, VCE=-2V*
IC=-4A, VCE=-2V*
IC=-6A, VCE=-2V*
MHz
IC=-50mA, VCE=-10V
f=100MHz
Output Capacitance
Cobo
21
pF
VCB=-10V, f=1MHz
Turn-On Time
t(on)
40
ns
Turn-Off Time
t(off)
670
ns
VCC=-10V, IC=-1A
IB1=IB2=-20mA
30
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%.
ZHB6718
NPN TRANSISTOR
TYPICAL CHARACTERISTICS
1
0.4
+25 °C
IC/IB=50
0.3
100m
100°C
25°C
0.2
10m
IC/IB=100
IC/IB=50
IC/IB=10
1m
1m
1.2
10m
100m
1
0.6
0.4
0.1
10
0.0
1mA
10mA
100mA
IC - Collector Current (A)
Collector Current
VCE(sat) v IC
VCE(sat) vs IC
1.2
VCE=2V
100°C
450
1.0
0.8
-55°C
225
1A
10A
IC/IB=50
0.6
-55°C
10A
1.0
0.8
25°C
1A
-55°C
25°C
100°C
0.4
0.2
0.2
0.0
10mA
1mA
100mA
1A
0
10A
Collector Current
-55°C
25°C
0.6
100°C
0.4
0.2
0.0
1mA
10mA
100mA
Collector Current
VBE(on) vs IC
100mA
VBE(sat) vs IC
VCE=2V
0.8
10mA
Collector Current
hFE vs IC
1.0
0.0
1mA
1A
10A
ZHB6718
PNP TRANSISTOR
TYPICAL CHARACTERISTICS
1
0.6
+25°C
IC/IB=30
0.5
100m
0.4
0.3
10m
1m
1m
100m
25°C
-55°C
0.1
0.0
10m
100°C
0.2
IC/IB=50
IC/IB=30
IC/IB=10
1
10
1mA
IC - Collector Current (A)
1.2
100°C
VCE=2V
1.4
10A
1A
10A
IC/IB=10
1.2
25°C
450
1.0
0.8
0.8
-55°C
225
0.4
0.6
-55°C
25°C
100°C
0.4
0.2
0.2
0.0
1mA
1.2
1A
VCE(sat) vs IC
1.0
0.6
100mA
Collector Current
VCE(sat) v IC
1.4
10mA
10mA
100mA
0
10A
1A
10mA
100mA
Collector Current
Collector Current
hFE vs IC
VBE(sat) vs IC
VCE=2V
1.0
-55°C
0.8
25°C
0.6
100°C
0.4
0.2
0.0
1mA
0.0
1mA
10mA
100mA
Collector Current
VBE(on) vs IC
1A
10A
ZHB6718
SAFE OPERATING AREA
10
10
1
1
DC
1s
100ms
10ms
1ms
100µs
100m
10m
100m
100m
1
10
VCE - Collector Emitter Voltage (V)
100
Safe Operating Area (Full Copper)
see note below
10m
100m
DC
1s
100ms
10ms
1ms
100µs
1
10
VCE - Collector Emitter Voltage (V)
100
Safe Operating Area (Minimum Copper)
see note below
Note: The Safe Operating Area (SOA) charts shown are a combination of the worst case secondary
breakdown characteristics for the NPN/PNP pair, and the thermal curves demonstrating the
power dissipation capability of the energised ZHB part (opposing NPN-PNP switched on) when
mounted on a 50mm x 50mm FR4 PCB. The two cases show:
i) full copper present and
ii) with minimal copper present - this being defined as an SM-8 footprint with 1.5mm tracks to
the edge of the PCB.
For example, on a 50mm x 50mm full copper PCB, the ZHB6718 will safely dissipate 2W under
DC conditions, taking note of continuous current ratings and voltage limits. Higher powers can
be tolerated for pulsed operation, while the shorter pulse widths (100µs and 1ms) being relevant
for assessment of switching conditions.
The ZHB6718 ’H’-Bridge can be modelled within SPICE using the following transistor models
configured in the standard ’H’-Bridge topology, as shown in the schematic diagram of this datasheet.
*ZETEX H Bridge NPN transistors Spice model Last revision 4/7/97
.MODEL H6718N NPN IS =5.611E-13 NF =1.0022 BF =480 IKF=4.6 VAF=51
+ ISE=1.73E-13 NE =1.4 NR =1.0002 BR =200 IKR=3 VAR=25
+ ISC=7.3152E-13 NC =1.47 RB =0.032 RE =0.027 RC =0.025
+ CJC=59E-12 MJC=0.2651 VJC=0.3051 CJE=216E-12
+ TF =0.95E-9 TR =2.25E-9
*
*
*ZETEX H Bridge PNP transistors Spice model Last revision 4/7/97
.MODEL H6718P PNP IS =6.8E-13 BF =480 IKF =2 VAF =23
+ ISE=0.8E-13 NE =1.5567 NR =1.00 BR =70 IKR=0.4
+ VAR=7 ISC=7.5E-14 NC =1.19 RB =0.085 RE =0.04
+ RC =0.045 CJC=70.02E-12 MJC=0.4685 VJC=0.7714
+ CJE=203.6E-12 MJE=0.5029 VJE=0.9403 TF =0.71E-9
+TR =23.7E-9
*
(C) 1997 ZETEX PLC
The copyright in these models and the design embodied belong to Zetex PLC (“Zetex”). They are supplied
free of charge by Zetex for the purpose of research and design and may be used or copied intact (including
this notice) for that purpose only. All other rights are reserved. The models are believed accurate but no
condition or warranty as to their merchantability or fitness for purpose is given and no liability in respect
of any use is accepted by Zetex PLC, its distributors or agents. Zetex PLC, Fields New Road, Chadderton,
Oldham OL9 8NP, UK.
ZHB6718
He
A
E
8
e1
1
2
7
D
e2
3
b
6
4
5
A1
o
45°
c
Lp
Dim
Millimetres
Inches
Min
Typ
Max
Min
Typ
Max
A
–
–
1.7
–
–
0.067
A1
0.02
–
0.1
0.0008
–
0.004
b
–
0.7
–
–
0.028
–
c
0.24
–
0.32
0.009
–
0.013
D
6.3
–
6.7
0.248
–
0.264
E
3.3
–
3.7
0.130
–
0.145
e1
–
4.59
–
–
0.180
–
3
e2
–
1.53
–
–
0.060
–
He
6.7
–
7.3
0.264
–
0.287
Lp
0.9
–
–
0.035
–
–
α
–
–
15°
–
–
15°
β
–
10°
–
–
10°
–
Zetex plc.
Fields New Road, Chadderton, Oldham, OL9-8NP, United Kingdom.
Telephone: (44)161 622 4422 (Sales), (44)161 622 4444 (General Enquiries)
Fax: (44)161 622 4420
Zetex GmbH
Streitfeldstraße 19
D-81673 München
Germany
Telefon: (49) 89 45 49 49 0
Fax: (49) 89 45 49 49 49
Zetex Inc.
47 Mall Drive, Unit 4
Commack NY 11725
USA
Telephone: (516) 543-7100
Fax: (516) 864-7630
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3510 Metroplaza, Tower 2
Hing Fong Road,
Kwai Fong, Hong Kong
Telephone:(852) 26100 611
Fax: (852) 24250 494
These are supported by
agents and distributors in
major countries world-wide
Zetex plc 1997
Internet:
http://www.zetex.com
This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied
or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or
services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of
any product or service.