SuperSOT SOT23 PNP SILICON POWER (SWITCHING) TRANSISTORS DIM A B C D F G K L N Millimeters Min Max 2.67 3.05 1.20 1.40 1.10 0.37 0.53 0.085 0.15 NOM 1.9 0.01 0.10 2.10 2.50 NOM 0.95 Inches Min Max 0.105 0.120 0.047 0.055 0.043 0.0145 0.021 0.0033 0.0059 NOM 0.075 0.0004 0.004 0.0825 0.0985 NOM 0.37 FMMT717 FMMT718 FMMT720 FMMT722 FMMT723 ISSUE 3 JUNE 1996 FEATURES * 625mW POWER DISSIPATION * * * * * IC CONT 2.5A IC Up To 10A Peak Pulse Current Excellent hfe Characteristics Up To 10A (pulsed) Extremely Low Saturation Voltage E.g. 10mV Typ. Exhibits extremely low equivalent on-resistance; RCE(sat) E C B DEVICE TYPE COMPLEMENT PARTMARKING RCE(sat) FMMT717 FMMT617 717 72mΩ at 2.5A FMMT718 FMMT618 718 97mΩ at 1.5A FMMT720 FMMT619 720 163mΩ at 1.5A FMMT722 722 - FMMT723 FMMT624 723 - ABSOLUTE MAXIMUM RATINGS Zetex plc. Fields New Road, Chadderton, Oldham, OL9-8NP, United Kingdom. Telephone: (44)161-627 5105 (Sales), (44)161-627 4963 (General Enquiries) Fax: (44)161-627 5467 Zetex GmbH Streitfeldstraße 19 D-81673 München Germany Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 Zetex Inc. 47 Mall Drive, Unit 4 Commack NY 11725 USA Telephone: (516) 543-7100 Fax: (516) 864-7630 Zetex (Asia) Ltd. 3510 Metroplaza, Tower 2 Hing Fong Road, Kwai Fong, Hong Kong Telephone:(852) 26100 611 Fax: (852) 24250 494 These are supported by agents and distributors in major countries world-wide Zetex plc 1997 Internet: http://www.zetex.com This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. FMMT 717 FMMT 718 FMMT 720 FMMT 722 FMMT 723 UNIT VCBO -12 -20 -40 -70 -100 V Collector-Emitter Voltage VCEO -12 -20 -40 -70 -100 V Emitter-Base Voltage VEBO -5 -5 -5 -5 -5 V Peak Pulse Current** ICM -10 -6 -4 -3 -2.5 A Continuous Collector Current IC -2.5 -1.5 -1.5 -1.5 -1 A Base Current IB -500 mA Power Dissipation at Tamb=25°C* Ptot 625 mW Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C PARAMETER SYMBOL Collector-Base Voltage *Maximum power dissipation is calculated assuming that the device is mounted on a ceramic substrate measuring 15x15x0.6mm **Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% Spice parameter data is available upon request for these devices 3 - 159 FMMT722 FMMT723 FMMT720 TYPICAL CHARACTERISTICS 1 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). 0.6 +25°C PARAMETER 100°C 25°C 100m -55°C IC/IB=50 IC/IB=20 IC/IB=10 0.2 0.0 10m 1m 10m 100m 1 10 1mA 10mA IC - Collector Current (A) 10A VCE(SAT) vs IC 1.6 VCE=2V 100°C IC/IB=10 1.0 1.2 25°C 450 0.6 0.2 1.0 10mA 100mA 0 10A 1A 0.0 0.6 1mA 10mA 100mA 1A Collector Current Collector Current hFE vs IC VBE(SAT) vs IC -150 -100 -200 V IC =-100µA Collector-Emitter V(BR) CEO Breakdown Voltage -70 -125 -100 -160 V IC =-10mA* Emitter-Base V(BR)EBO Breakdown Voltage -5 -8.8 -5 -8.8 V IE=-100µA -100 nA nA VC B=-60V VC B=-80V -100 nA VEB=-4V -100 nA nA VC ES=-60V VC ES=-80V mV mV mV mV mV mV IC =-0.1A, IB=-10mA* IC =-0.5A, IB=-20mA* IC =-0.5A, IB=-50mA* IC =-1A, IB=-100mA* IC =-1A, IB=-150mA* IC =-1.5A, IB=-200mA* IC BO -100 Emitter Cut-Off Current IEBO -100 Collector Emitter Cut-Off Current IC ES -100 Collector-Emitter Saturation Voltage VC E( sat) 10A Base-Emitter Saturation Voltage VBE( sat) Base-Emitter Turn-On Voltage VBE(on) Static Forward Current Transfer Ratio hFE 1.0 25°C 0.4 0.1 100mA 1A -50 -200 -140 -220 -175 -260 -0.94 -1.05 -0.78 -1.0 470 300 450 175 275 40 60 D.C. 1s 100ms 10ms 1ms 100µs Transition Frequency 10A Collector Current 0.01 0.1 1.0 10 100 fT 150 -125 -200 -210 -330 -0.89 -1.0 V IC =-1A, IB=-150mA* IC =-1.5A, IB=-200mA* -0.71 -1.0 V IC =-1A, VC E=-10V* IC =-1.5A, VC E=-5V* 475 300 250 450 375 IC =-10mA, VC E=-5V* IC =-10mA, VC E=-10V* IC =-0.1A, VC E=-5V* IC =-0.1A, VC E=-10V* IC =-0.5A, VC E=-10V* IC =-1A, VC E=-5V* IC =-1A, VC E=-10V* IC =-1.5A, VC E=-5V* IC =-1.5A, VC E=-10V* IC =-3A, VC E=-5V* 30 200 150 200 MHz IC =-50mA, VC E=-10V f=100MHz pF VC B=-10V, f=1MHz VC C =-50V, IC =-0.5A IB1 =IB2 =-50mA Output Capacitance Cob o 14 Turn-On Time t(on) 40 50 ns Turn-Off Time t(off) 700 760 ns 20 13 20 *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% Safe Operating Area 3 - 164 -80 250 VCE (VOLTS) VBE(ON) vs IC -50 300 10 0.2 10mA -35 -135 300 -55°C 100°C 0.0 1mA -70 10 SINGLE PULSE TEST Tamb = 25 deg C VCE=2V 0.8 Collector-Base V(BR) CBO Breakdown Voltage 100°C 0.4 0.2 0.0 1mA TYP. Collector Cut-Off Current MAX. UNIT CONDITIONS. MAX. MIN. 25°C 0.6 225 -55°C FMMT723 TYP. -55°C 0.8 0.8 0.4 1A Collector Current VCE(SAT) v IC 1.0 100mA FMMT722 MIN. IC/IB=20 0.4 1.4 SYMBOL 3 - 165 FMMT722 FMMT718 TYPICAL CHARACTERISTICS TYPICAL CHARACTERISTICS 0.6 0.6 25°C 0.5 0.5 0.4 0.4 IC/IB=50 0.3 1 100m IC/IB=5 0.3 10mA 100mA 1A 10A 0.0 1mA 10mA 100mA 1A Collector Current VBE(SAT) vs IC VCE(SAT) vs IC 1.2 VCE=5V 100°C 0.8 0.6 225 -55°C 0.2 0.0 1mA 10mA 100mA 1A 1.4 1.0 25°C 0.8 100°C 0.6 0.4 0.2 0.2 10mA Collector Current 100mA 1A 10A 10mA 1.4 1A 10A 1A 10A IC/IB=10 1.2 25°C 1.0 450 -55°C 0.8 -55°C 25°C 0.6 225 100°C 0.4 0.2 0.0 1mA 1.2 100mA VCE(SAT) vs IC 10mA 100mA 0 10A 1A 0.0 1mA 10mA 100mA Collector Current hFE vs IC VBE(SAT) vs IC 10 SINGLE PULSE TEST Tamb = 25 deg C VCE=2V 1.0 -55°C 1.0 25°C -55°C 0.8 0.6 100ms 10ms 1ms 100µs 100°C 0.1 1.0 25°C D.C. 1s 0.4 100°C 0.4 0.1 D.C. 1s 100ms 10ms 1ms 100µs 0.2 0.2 0.0 1mA 1mA Collector Current VCE=2V VBE(SAT) vs IC 10 SINGLE PULSE TEST Tamb = 25 deg C 0.6 10 Collector Current VCE=5V 0.8 1 100°C Collector Current hFE vs IC 1.0 -55°C 0.4 0.0 1mA 10A 100m VCE(SAT) v IC 1.2 0.6 0.1 0.0 10m 25°C -55°C IC - Collector Current (A) IC/IB=5 0.8 450 25°C 1m 1m 10A 1.0 1.2 0.4 -55°C Collector Current 1.6 100°C 0.2 IC/IB=50 IC/IB=30 IC/IB=10 0.1 0.0 1mA 1.0 10m 25°C 0.2 0.1 1.4 0.4 100°C IC/IB=10 0.2 IC/IB=30 0.5 0.3 IC/IB=20 0.6 +25°C IC/IB=10 10mA 100mA 1A 10A Collector Current VBE(ON) vs IC 3 - 166 0.01 0.1 1 10 100 0.0 1mA 10mA 100mA VCE (VOLTS) Collector Current Safe Operating Area VBE(ON) vs IC 1A 10A 0.01 0.1 1.0 10 VCE (VOLTS) Safe Operating Area 3 - 163 100 FMMT617 FMMT624 FMMT618 FMMT625 FMMT619 SuperSOT Series FMMT717 FMMT722 FMMT718 FMMT723 FMMT720 THERMAL CHARACTERISTICS AND DERATING INFORMATION DERATING CURVE MAXIMUM TRANSIENT THERMAL RESISTANCE * Reference above figures, Devices were mounted on a 15mmx15mm ceramic substrate 3 - 158