ZETEX ZNI1000_06

ZNI1000
TEMPERATURE SENSOR
DESCRIPTION
The ZNI1000 is a Ni thin film Resistance Temperature
Detector (RTD), specified to DIN 43760. The high
temperature coefficient offers higher signal outputs
than other RTD’s, which results in higher accuracy with
smaller temperature changes.
FEATURES
SOT23
• Resistance at 0⬚C: 1000⍀
• SOT23 package
• Available on 8mm tape
APPLICATIONS
• Automotive electronic
• Circuit protection
• Temperature compensation
• Temperature measurement
PINOUT
ORDERING INFORMATION
DEVICE
REEL
SIZE
TAPE
WIDTH
QUANTITY
PER REEL
ZNI1000TA
7”
8mm
3,000 units
ZNI1000TC
13”
8mm
10,000 units
Top View
DEVICE MARKING
Pin 1 - Ni1000
Pin 2 - Ni1000
Pin 3 - need a good thermal
contact for a short response
time
• ZNI
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SEMICONDUCTORS
ZNI1000
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
LIMIT
UNIT
Continuous current
I CC
4
mA
Total power dissipation
P TOT
20
mW
Operating temperature range
T amb
-55 to +150
°C
Storage temperature range
T stg
-55 to +150
°C
ELECTRICAL CHARACTERISTICS
PARAMETER
SYMBOL
MIN
TYP
MAX
UNIT
CONDITIONS
Resistance 0°C
R0
-
1000
-
⍀
T=0⬚C, I<1mA
Resistance 100°C
R 100
-
1618
-
⍀
T=100⬚C, I<1mA
Tolerance class B
-
⫾(0.4+0.028 x ⱍTⱍ)
-
-55 to 0°C
Tolerance class B
-
⫾(0.4+0.007 x ⱍTⱍ)
-
0 to 150°C
CHARACTERISTICS ACCORDING TO DIN43760
Resistance at a given temperature
R0
Resistance at 0⬚C
B
6.650 x 10-6
T
Temperature in ⬚C
C
2.805 x 10-11
A
5.485*10-3
D
-2.000 x 10-17
R(T) = R0 x (1 + A x T + B x T2 + C x T4 + D x T6)
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SEMICONDUCTORS
2
ZNI1000
Formula for temperature at a given resistance:
T (R ) = a + bR + cR 2 + dR 3
coefficients:
a.= -232.2
b.= 0.290
c.= -66.65 x 10-6
d.= -8.85 * 10-9
Tolerances: Class B
+/- (0,4 + 0,007 *|T|) in range from 0 to 150°C
+/- (0,4 + 0,028 *|T|) in range from -55 to 0°C
Specification:
R0 = 1000 Ohm at 0°C
Temperature range:
operating -55 to +150°C
storage -55 to +150°C
Long Term stability:
⌬R = 0,1 % after 1000 h at 150°C
Measurement Current (DC):
typ. 1,2 mA; max. 5 mA
Self heating
For accurate temperature measurement it's recommended to choose a small current in order to avoid self heating
of the resistor. The temperature failure caused by the measurement current can be calculated with:
T = P/EK
where P = I² * R is the heat power caused by the measurement current and EK is the self heating coefficient.
The self heating coefficient for the Ni1000-SOT is EW=(1,7 ± 0,3) mW/K (Air: 23°C; no air flow)
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SEMICONDUCTORS
ZNI1000
Issue 4 - April 2006
SEMICONDUCTORS
4
ZNI1000
PACKAGE OUTLINE
PAD LAYOUT
CONTROLLING DIMENSIONS IN MILLIMETERS APPROX CONVERSIONS INCHES
PACKAGE DIMENSIONS
Millimeters
DIM
Inches
Min
Max
Min
Max
A
2.67
3.05
0.105
0.120
B
1.20
1.40
0.047
C
ᎏ
1.10
ᎏ
D
0.37
0.53
F
0.085
0.15
G
1.90 NOM
Millimeters
DIM
Inches
Min
Max
Max
Max
H
0.33
0.51
0.013
0.020
0.055
K
0.01
0.10
0.0004
0.004
0.043
L
2.10
2.50
0.083
0.0985
0.015
0.021
M
0.45
0.64
0.018
0.025
0.0034
0.0059
N
0.95 NOM
0.0375 NOM
ᎏ
ᎏ
ᎏ
0.075 NOM
© Zetex Semiconductors plc 2005
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United Kingdom
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Fax: (49) 89 45 49 49 49
[email protected]
Telephone: (1) 631 360 2222
Fax: (1) 631 360 8222
[email protected]
Telephone: (852) 26100 611
Fax: (852) 24250 494
[email protected]
Telephone (44) 161 622 4444
Fax: (44) 161 622 4446
[email protected]
These offices are supported by agents and distributors in major countries world-wide.
This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced
for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company
reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service.
For the latest product information, log on to www.zetex.com
Issue 4 - April 2006
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SEMICONDUCTORS