TH7888A AREA ARRAY CCD IMAGE SENSOR 1024 × 1024 PIXELS WITH ANTIBLOOMING n n n n n n n n n n n 1024 x 1024 pixels with memory zone Up to 30 images / second Built-in antiblooming device providing an electronic shutter function. Pixel : 14 mm x 14 mm Image zone : 14,34 x 14,34 mm² 2 outputs at 20 MHz each Readout through 1 or 2 ouputs Possible binning 2 x 2 Optical shield against parasitic reflexions and stray light A/R window in 400 - 700 nm bandwidth Optional integrated Peltier cooler PIN IDENTIFICATION Pin N° Y9 AA9 Y10 AA10 Y5 AA5 Y6 AA6 Y4 B2 A2 A3 B3 B1 A1 A9 A8 B10 B8 B7 Symbol FP1 FP2 FP3 FP4 FM1 FM2 FM3 FM4 FM FL1 FL2 FL3 FL4 FL5 FL6 VDD1 VDD2 VS1 VS2 VDP A6 A10 B9 B4 VGS VOS1 VOS2 FR Y7 FA A7 VDR AA7 A4, A5, B5, B6 Y8, AA4, AA8 AA1, AA2 VA VSS VSS PELTIER+ Y1, Y2 Figure 1 : TH7888A organization Y3 AA3 November 1999 Designation Image zone clocks Memory zone clocks Memory to register clock Readout register clocks Output amplifier drain supply Output amplifier source supply Protection drain bias Register output gate bias Video outputs Reset clock Antiblooming gate clock Reset bias Antiblooming diode bias Substrate bias OPTIONAL Peltier cooler power supply PELTIER NC otherwise PT+ OPTIONAL Temperature sensor Pt 100W DIN43760 PTNC otherwise 1/16 TH7888A DESCRIPTION TH7888A is especially designed for high data rate applications (up to 30 pict /s in 1024x1024 format progressive scan) in medical and industrial fields. This area array image sensor consists of a 1024 x 1024 pixels (14 mm x 14 mm) image zone associated to a memory zone (masked with optical shield). In order to increase data rate, it is provided 2 separate outputs that can be used for parallel readout. (readout frequency up to 20 MHz / output leading to a total readout frequency of 40 MHz). These two outputs allow 3 readout modes (single or dual port readout). TH7888A is designed with antiblooming structure providing electronic shutter capability. Moreover the 2 x 2 binning mode is available on this sensor. In that case, the image size is 512 x 512 with 28 mm x 28 mm pixels. TH7888A package is sealed with a specific anti-reflective window optimized in 400-700 nm spectrum bandwidth. OPTIONS : the device can be delivered with integrated low power Peltier cooler in order to improve sensor performances in high temperature environments (typically + 50°C). FUNCTIONAL DIAGRAM Figure 1 gives the general sensor organization. Extra dark lines are provided for use as dark references or for smearing digital correction. Extra dark pixels are provided for line dark reference clamping. Each frame is made of 1056 video lines : n 1 dummy line n 12 useful dark reference lines (with optical shield) n 3 isolation lines n 1024 useful lines n 3 isolation lines n 12 dark reference lines (with optical shield) n 1 dummy line Each video line is made of 546 or 1058 elements, depending on readout mode (single or dual port modes): n 12 inactive prescan elements n 1 isolation element n 16 useful dark references (with optical shield) n 5 isolation elements n 512 or 1024 useful video pixels 2/16 TH7888A GEOMETRICAL CHARACTERISTICS Figure 2b : Pixel layout Figure 2c : Cross-section AA’ ABSOLUTE MAXIMUM RATINGS Storage temperature ............................................................................................................................................-55°C to +150°C Operating temperature...........................................................................................................................................-40°C to +85°C Thermal cycling ...............................................................................................................................................................15°C / mn Maximum applied voltages : Y9, AA9, Y10, AA10, Y5, AA5, Y6, AA6, Y4, B2, A2, A3, B3, B1, A1, B4, A6 .................................................-0.3 to 15 V A9, A8, B10, B8, B7, A7, AA7 ...........................................................................................................................-0.3 V to 15.5 V Y7..............................................................................................................................................................................-0.3 V to 12 V A4, A5, B5, B6, Y8, AA4, AA8 ..................................................................................................................................0V (ground) 3/16 TH7888A PELTIER OPTION Storage temperature ..............................................................................................................................................-55°C to +85°C Operating temperature...........................................................................................................................................-40°C to +70°C Thermal cycling ...............................................................................................................................................................10°C / mn Maximum applied voltages : PIN MAX VOLTAGE RANGE MAX CURRENT RANGE 5 V 1.8 A AA1, AA2 with respect to Y1, Y2 Stresses above those listed under absolute maximum ratings may cause permanent device failure. Functionality at or above these limits is not implied. Exposure to absolute maximum ratings for extended periods may affect device reliability. Operating range defines the limits whithin which the functionality is guaranteed. Electrical limits of applied signals are given in operating conditions section OPERATING PRECAUTIONS Shorting the video outputs to any other pin, even temporarily, can permanently damage the on-chip output amplifier. OPERATING CONDITIONS TABLE 1 - DC CHARACTERISTICS PARAMETER Output amplifier drain supply SYMBOL VALUE UNIT Min. Typ. Max. VDD1, VDD2 14.5 15 15.5 V Protection drain bias VDP 14.5 15 15.5 V Reset bias VDR 14.5 15 15.5 V Antiblooming diode bias VA 14.5 15 15.5 V Register output gate bias VGS 2.2 2.5 2.8 V Output amplifier source supply VS1,2 0 V VSS 0 V Peltier power supply ** IPELTIER 1.1 A Voltage accross Peltier VPELTIER 3 V Ground * OPTIONAL * Ground : note that the package metal back is internally grounded. ** Peltier power supply : conditions for 10°C sensor temperature with 50°C external temperature. 4/16 TH7888A TIMING DIAGRAMS Readout Mode The serial readout register is operated in a two phase transfer mode. However, there are provided 6 separated command electrodes that shall be connected differently depending on the required readout mode. The following table gives the connections to be made for each mode: Readout modes Ü 1 output, VOS1 Drive clocks (signals) Þ 1 output, VOS2 2 outputs (parallel) (mirror effect) FL1 pins B2, B3, B1 pins B2, A3, A1 pins B2, B3, A1 FL2 pins A2, A3, A1 pins A2, B3, B1 pins A2, A3, B1 The following diagrams are given for 20 MHz readout frequency, 1.25 MHz vertical transfer frequency Figure 3 : Frame timing diagram 5/16 TH7888A 1 : 12 Inactive pre-scan elements 2 : 1 isolation element 2 : 16 dark ref pixels 2 : 5 isolation elements 3 3 2 3 : : : : 1024 useful video pixels (single output readout mode) 512 useful video pixels (dual output readout mode) Figure 4 : Line timing diagram Figure 5 : Vertical transfer during Image to memory zone transfer 6/16 TH7888A Figure 6 : Transfer period from image zone to memory zone (FP and FM) for 1.25 MHz vertical transfer frequency (Fv = 1 / Tv ). t1 = 7 ns typ. t2 = 5 ns typ. td = 8 ns typical delay time Figure 7 : Output diagram for readout register and reset clock 20 MHz applications. Cross over of complementary clocks (F L1, F L2) Figure 7 : between 30% and 70 % of max. amplitude. 7/16 TH7888A BINNING MODE OPERATION In this mode, the image is composed of 512 x 512 pixels (28 mm x 28 mm each). Fall times & rise times : see fig. 6& 7 Figure 8 : Summation in the readout register of 2 adjacent lines. Figure 9 : Summation of 2 adjacent pixels In binning mode operation, maximum level of elementary pixel (14 x 14 mm) is reduced to Vsat / 4. 8/16 TH7888A EXPOSURE TIME REDUCTION TH7888A allows exposure time control (electronic shutter function). The exposure time reduction is achieved by pulsing all the FPi gates to 0 volt so as to remove continuously all the photogenerated electrons through antiblooming drain VA. Fall times & rise times : see fig. 5 & 6 Figure 10 : Timing diagram for electronic shutter TABLE 2 - DRIVE CLOCK CHARACTERISTICS Parameter Symbol Value Unit Remarks 8.5 0.8 V V Typical input capacitance 15 nF See figure 11 8 0.5 8.5 0.8 V V Typical input capacitance 15.5 nF See figure 11 8.5 0 9 0.5 9.5 0.8 V V 3 0 4 0.5 7 0.8 V V 10 0 12 2 13 3 V V 8.5 0 FH 9 0.5 20 9.5 0.8 23 V V MHz See figure 7 FV 1.25 1.7 MHz See figure 12 Min Typ Max 7.5 0 8 0.5 7.5 0 FP1,2, 3,4 Image zone clocks High level Low level FM1,2,3,4 Memory zone clocks High level Low level FM Memory to register clocks High level Low level FA Antiblooming gate High level (integration) Low level (transfer) FR Reset gate High level Low level Readout register clocks High level Low level Maximum readout register frequency Image zone to memory zone transfer frequency Typical input capacitance 10 pF Typical input capacitance 14 nF See figures 11 & 13 Typical input capacitance 10 pF FL1,2 9/16 TH7888A Figure 11 : Drive clocks capacitance network TABLE 3 - STATIC AND DYNAMIC ELECTRICAL CHARACTERISTICS PARAMETER SYMBOL VALUE Min. Output amplifier supply current Output impedance DC output level Output conversion factor 10/16 IDD TYP. 200 CVF 5.5 225 250 11 6 REMARKS mA per amplifier Max. 10 Zs VREF UNIT W V 6.5 µV/ e- TH7888A ELECTROOPTICAL PERFORMANCE • General conditions : Temp = 25°C (package back temperature) Light source : 2854K with 2 mm BG38 filter (unless specified) + F/3.5 optical aperture . 30 images per second mode (unless specified) Typical operating conditions. • Readout mode : 2 outputs • Values exclude dummy elements and blemishes. PARAMETER Output register saturation level SYMBOL VALUE Min. TYP. UNIT Max. VSAT reg 2.3 2.6 Pixel saturation level VSAT 1.6 1.9 2.2 Pixel saturation charge (electron per pixel) QSAT 270 320 370 Responsivity at 640 nm Responsivity with BG38 filter REMARKS V V Note 1 ke- R 6.5 11 V/µJ/cm² mV/lux QE 15 % Photo response non uniformity (1s) PRNU 1.3 1.7 % VOS Dark signal non uniformity (1s) DSNU 0.28 0.4 mV Note 2 VDS 2 3 mV Note 3 4 5.6 mV Note 4 VN 200 µV Note 5 D 80 dB Note 6 Horizontal modulation transfer function at 500 nm MTF 70 % Note 7 Vertical charge transfer inefficiency VCTI Horizontal charge transfer inefficiency HCTI Quantum efficiency at 640 nm Average dark signal Temporal RMS noise in darkness (Last line) Dynamic range Note Note Note Note Note Note Note Note Note Note Note 1 1 2 3 4 5 5 6 7 8 9 : : : : : : : : : : : 2.10-5 7.10-5 see fig.15 Note 8 Note 9 Pixel saturation (full well) as a function of vertical transfer frequency (see figure 12) and antiblooming adjustment (see figure13). After subtraction of dark signal slope due to memory readout time First line level referenced from inactive prescan elements (12 samples) Last line level referenced from inactive prescan elements (12 samples) Measured with Correlated Double Sampling (CDS) including 160 µV readout noise and dark current noise in the general test conditions. Saturation to RMS noise in darkness ratio. At Nyquist frequency. VSAT / 2 measurement and 1.25 MHz vertical transfer frequency. VSAT / 2 measurement and 20 MHz horizontal transfer frequency. 11/16 TH7888A Figure 12 : Saturation level by full well with antiblooming out (FA high = 0 volt) vs the vertical transfer frequency. Figure 13 : Saturation level limitation by the antiblooming effect on the pixel (Typical operating conditions) VSMEARING T = NESAT × V × H VSAT TI NESAT = number of times ESAT TI = integration time with ESAT = VSAT / Responsivity (typical illumination conditions) TV = image to memory transfer time Figure 14 : Smearing effect 12/16 TH7888A Quantum Efficiency Figure 15 : Spectral response. IMAGE QUALITY GRADE Blemish Max area of 2 x 2 defective pixels Clusters Less than 7 contiguous defects in a column Columns More than 7 contiguous defects in a column General conditions Room temperature ..................................................................................................................................................................25°C Frequency .....................................................................................................................................................................30 images/s .............................................................................................................................................................typical operating conditions Considered image zone .............................................................................................................................................1024 x 1024 Light source ....................................................................................................2854 K with BG38 filter + F/3.5 optical aperture At Vos =0.7 Vsat. TYPE Blemishes / clusters Columns WHITE a > 20 % Vos a > 10 % Vos BLACK êaï 30 % Vos êaï 10 % Vos In darkness Blemishes / clusters Columns (*) reference is Vo : average darkness signal a > 10 mV (*) a > 5 mV (*) Number of defects Total pixel number affected by blemishes and clusters: .......................................................................................................100 Maximum number of clusters:.....................................................................................................................................................10 Maximum number of columns:......................................................................................................................................................5 a : amplitude of video signal of defect with respect to mean output voltage Vos Ordering code : TH7888AVRHRB TH7888ACBHRB (OPTIONAL: with integrated Peltier cooler) 13/16 TH7888A PACKAGE OUTLINE DRAWING (standard) * * * Legend All values are in mm. 1 2 3 4 5 6 7 : : : : : : : black alumina 40 pins PGA package black optical mask 400nm - 700 nm AR coated window (R<1 % per side) Metal back, (CuW - copper tungsten) gold plated. Electrically grounded (VSS). Optical center. first useful pixel (readout through VOS1) mechanical reference 14/16 Ø3.04 ±0.04 0.5 Mechanical distance Optical distance Ztop 2.82 ±0.31 2.31 ±0.29 Zbottom 1.68 ±0.15 2.19 ±0.17 TH7888A PACKAGE OUTLINE DRAWING (Peltier option) * * * Legend All values are in mm. 1 2 3 4 5 6 7 8 : : : : : : : : black alumina 40 pins PGA package black optical mask 400nm - 700 nm AR coated window (R<1 % per side) Metal part with integrated Peltier element. Metal back, (CuW - copper tungsten) gold plated. Electrically grounded (VSS). Optical center. first useful pixel (readout through VOS1) mechanical reference Ø3H8 0.5 Mechanical distance Optical distance Ztop 2.98 ±0.68 2.48 ±0.58 Zbottom 4.50 ±0.32 5.00 ±0.33 15/16 This product is manufactured by THOMSON-CSF SEMICONDUCTEURS SPECIFIQUES - 38521 SAINT-EGREVE / FRANCE. For further information please contact : THOMSON-CSF SEMICONDUCTEURS SPECIFIQUES - Route Départementale 128 - B.P. 46 - 91401 ORSAY Cedex / FRANCE - Tél. : (33)(0) 1.69.33.03.24 / Téléfax : (33)(0) 1.69.33.03.21. E-mail : [email protected] - Internet : http://www.tcs.thomson-csf.com 16/16 ORDER CODE : DSTH7888AT/1199 Information furnished is believed to be accurate and reliable. However THOMSON-CSF SEMICONDUCTEURS SPECIFIQUES assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of THOMSON-CSF SEMICONDUCTEURS SPECIFIQUES. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. THOMSON-CSF SEMICONDUCTEURS SPECIFIQUES products are not authorized for use as critical components in life support devices or systems without express written approval from THOMSON-CSF SEMICONDUCTEURS SPECIFIQUES. 1999 THOMSONCSF SEMICONDUCTEURS SPECIFIQUES - Printed in France - All rights reserved. Créé / réalisé par Graphic Express - Tél. : 01.46.55.27.24 - 10688 - 11/99 TH7888A