DIODES ZRT025

ZRT025
2.5V LOW POWERPRECISION REFERENCE SOURCE
DESCRIPTION
The ZRT025 is a monolithic integrated circuit providing
a precise stable reference voltage of 2.5V at 500␮A.
The circuit features a knee current of 150␮A and
operation over a wide range of temperatures and
currents.
T h e Z R T025 i s a v a i l a bl e f or s urf a ce m o u n t
applications. This product offers a trim facility whereby
the output voltage can be adjusted as shown in Fig.1.
This facility is used when compensating for system
errors or setting the reference output to a particular
value. When the trim facility is not used, the pin should
be left open circuit.
SOT223
FEATURES
• Trimmable output
• Excellent temperature stability
• Low output noise figure
• Available in two temperature ranges
• 1 and 2% initial voltage tolerance versions available
• No external stabilizing capacitor required in most cases
• Low slope resistance
• No derating required at low temperatures
SOT223
Package suffix G
• SOT223 package
Top view (pin 4 floating or
connected to pin 2)
ORDERING INFORMATION
DEVICE
TOL%
OPERATING TEMP °C
PARTMARK
REEL
SIZE
TAPE
WIDTH
QUANTITY
PER REEL
ZRT025GC2TA
2
-40 to 85
ZRT025C2
7”
12mm
1,000 units
ZRT025GC1TA
1
-40 to 85
ZRT025C1
7”
12mm
1,000 units
ZRT025GA1TA
1
-55 to 125
ZRT025A1
7”
12mm
1,000 units
A grade
C grade
-55 to 125°C
-40 to 85°C
ISSUE 4 - DECEMBER 2003
1
SEMICONDUCTORS
ZRT025
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
LIMIT
UNIT
75
mA
A grade
-55 to 125
°C
C grade
-40 to 85
°C
-55 to 150
°C
Reverse current
(1)
Operating temperature:
T OMP
Storage temperature
(1)
T STG
Above 72°C this figure should be linearly derated to 25mA at 125°C
POWER DISSIPATION (at Tamb = 25°C unless otherwise stated)
PACKAGE
VALUE
SOT223
2
UNIT
W
TEMPERATURE DEPENDENT ELECTRICAL CHARACTERISTICS
SYMBOL
PARAMETER
∆V R
Output voltage change over
relevant temperature
range(See note (a))
TCVR
Output voltage temperature
coefficient (See note (b))
INITIAL
VOLTAGE
TOLERANCE %
GRADE A
-55 TO 125°C
GRADE C
-40 TO 85°C
UNIT
1&2
6.8
22.5
2.7
8.8
mV
1&2
15.0
50.0
15.0
50.0
ppm/°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated)
SYMBOL
PARAMETER
VR
Output voltage
1% tolerance (A1,C1)
CONDITIONS
MIN.
TYP.
MAX.
UNIT
I R =500␮A
2.475
2.500
2.525
V
2.450
2.500
2.550
2% tolerance (C2)
⌬V TRIM
Output voltage adjustment range
T C ⌬V TRIM
Change in T C V R with output adjustment
IR
Operating current range
t on
t off
Turn-on timeTurn-off time
e np-p
Output voltage noise (over the range 0.1 Peak to peak
to 10Hz)
measurement
RS
Slope resistance
⫾5
R T =100k⍀
2.5
0.15
R L =1k⍀
I R = 0.5mA to
5mA
(See note (c))
V
%
ppm/°C/%
75
mA
10
0.3
␮s
50
␮V
0.85
2.0
⍀
ISSUE 4 - DECEMBER 2003
SEMICONDUCTORS
2
ZRT025
TYPICAL CHARACTERISTICS
NOTES:
(a) Output change with temperature
(c) Slope resistance (RS)
The absolute maximum difference between the
maximum output voltage and the minimum output
voltage over the specified temperature range
The slope resistance is defined as :
RS =
⌬VR=Vmax-Vmin
changeinV R
specificcurrentrange
⌬I=5-0.5=4.5mA (typically)
(b) Output temperature coefficient (TCVR)
(d) Line regulation
The ratio of the output change with temperature to the
specified temperature range expressed in ppm/°C
The ratio of change in output voltage to the change in
input voltage producing it.
∆V R x 10 6
TCV R =
ppm ° C
V R x∆T
RS x 100
%/V
V R xRSOURCE
⌬T= Full temperature range
ISSUE 4 - DECEMBER 2003
3
SEMICONDUCTORS
ZRT025
SCHEMATIC DIAGRAM
Figure 1:
This circuit will allow the reference to be trimmed over
a wide range. The device is specified over a ⫾5% trim
range.
ISSUE 4 - DECEMBER 2003
SEMICONDUCTORS
4
ZRT025
PACKAGE OUTLINE
Controlling dimensions are in millimeters. Approximate conversions are given in inches
PACKAGE DIMENSIONS
Millimeters
Inches
DIM
Millimeters
Inches
DIM
Min
Max
Min
Max
Min
Max
Min
Max
A
–
1.80
–
0.071
e
2.30 BSC
0.0905 BSC
A1
0.02
0.10
0.0008
0.004
e1
4.60 BSC
0.181 BSC
b
0.66
0.84
0.026
0.033
E
6.70
7.30
b2
2.90
3.10
0.114
0.122
E1
3.30
C
0.23
0.33
0.009
0.013
L
0.90
D
6.30
6.70
0.248
0.264
–
0.264
0.287
3.70
0.130
0.146
–
0.0355
–
–
–
–
© Zetex plc 2003
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ISSUE 4 - DECEMBER 2003
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SEMICONDUCTORS