DIODES ZTX795A

PNP SILICON PLANAR MEDIUM POWER
HIGH GAIN TRANSISTOR
ZTX795A
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C)
PARAMETER
SYMBOL
MIN.
Transition Frequency
fT
100
Input Capacitance
Cibo
Output Capacitance
Switching Times
TYP.
MAX.
UNIT
CONDITIONS.
MHz
IC=-50mA, VCE=-5V
f=50MHz
225
pF
VEB=-0.5V, f=1MHz
Cobo
15
pF
VCB=-10V, f=1MHz
ton
toff
100
1900
ns
ns
IC=-100mA, IB1=-10mA
IB2=-10mA, VCC=-50V
C
B
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%
THERMAL CHARACTERISTICS
PARAMETER
SYMBOL
Rth(j-amb)1
Rth(j-amb)2†
Rth(j-case)
Thermal Resistance Junction to Ambient1
Junction to Ambient2
Junction to Case
MAX.
UNIT
175
116
70
°C/W
°C/W
°C/W
ZTX795A
ISSUE 1 – APRIL 94
FEATURES
* 140 Volt VCEO
* Gain of 250 at IC=0.2 Amps
* Very low saturation voltage
† Device mounted on P.C.B. with copper equal to 1 sq. Inch minimum.
E
E-Line
TO92 Compatible
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
V
Collector-Base Voltage
VCBO
-140
Collector-Emitter Voltage
VCEO
-140
V
Emitter-Base Voltage
VEBO
-5
V
Peak Pulse Current
ICM
-1
A
Continuous Collector Current
IC
-0.5
A
Practical Power Dissipation*
Ptotp
1.5
W
Ptot
1
5.7
W
mW/°C
-55 to +200
°C
Power Dissipation
at Tamb=25°C
derate above 25°C
Tj:Tstg
Operating and Storage Temperature Range
*The power which can be dissipated assuming the device is mounted in a typical manner on a
P.C.B. with copper equal to 1 inch square minimum
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C)
200
Thermal Resistance (°C/W)
Max Power Dissipation - (Watts)
2.5
2.0
C
1.5
Am
1.0
0.5
0
-40 -20
0
20 40
bie
as
e
nt t
te
m
em
pe
ra
per
tu
re
at u
re
60 80 100 120 140 160 180 200
D=1 (D.C.)
t1
D=t1/tP
tP
100
D=0.5
D=0.2
D=0.1
Single Pulse
0
0.0001
0.001
0.01
0.1
1
10
100
T -Temperature (°C)
Pulse Width (seconds)
Derating curve
Maximum transient thermal impedance
3-286
PARAMETER
SYMBOL
MIN.
Collector-Base Breakdown
Voltage
V(BR)CBO
Collector-Emitter Breakdown
Voltage
TYP.
MAX.
UNIT
CONDITIONS.
-140
V
IC=-100µA
V(BR)CEO
-140
V
IC=-10mA*
Emitter-Base Breakdown
Voltage
V(BR)EBO
-5
V
IE=-100µA
Collector Cut-Off Current
ICBO
-0.1
µA
VCB=-100V
Emitter Cut-Off Current
IEBO
-0.1
µA
VEB=-4V
Collector-Emitter Saturation
Voltage
VCE(sat)
-0.3
-0.3
-0.25
V
V
V
IC=-100mA, IB=-1mA*
IC=-200mA, IB=-5mA*
IC=-500mA, IB=-50mA*
Base-Emitter
Saturation Voltage
VBE(sat)
-0.95
V
IC=-500mA, IB=-50mA*
Base-Emitter
Turn-On Voltage
VBE(on)
V
IC=-500mA, VCE=-2V*
Static Forward Current
Transfer Ratio
hFE
-0.75
300
250
100
3-285
800
IC=-10mA, VCE=-2V*
IC=-200mA, VCE=-2V*
IC=-300mA, VCE=-2V*
PNP SILICON PLANAR MEDIUM POWER
HIGH GAIN TRANSISTOR
ZTX795A
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C)
PARAMETER
SYMBOL
MIN.
Transition Frequency
fT
100
Input Capacitance
Cibo
Output Capacitance
Switching Times
TYP.
MAX.
UNIT
CONDITIONS.
MHz
IC=-50mA, VCE=-5V
f=50MHz
225
pF
VEB=-0.5V, f=1MHz
Cobo
15
pF
VCB=-10V, f=1MHz
ton
toff
100
1900
ns
ns
IC=-100mA, IB1=-10mA
IB2=-10mA, VCC=-50V
C
B
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%
THERMAL CHARACTERISTICS
PARAMETER
SYMBOL
Rth(j-amb)1
Rth(j-amb)2†
Rth(j-case)
Thermal Resistance Junction to Ambient1
Junction to Ambient2
Junction to Case
MAX.
UNIT
175
116
70
°C/W
°C/W
°C/W
ZTX795A
ISSUE 1 – APRIL 94
FEATURES
* 140 Volt VCEO
* Gain of 250 at IC=0.2 Amps
* Very low saturation voltage
† Device mounted on P.C.B. with copper equal to 1 sq. Inch minimum.
E
E-Line
TO92 Compatible
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
V
Collector-Base Voltage
VCBO
-140
Collector-Emitter Voltage
VCEO
-140
V
Emitter-Base Voltage
VEBO
-5
V
Peak Pulse Current
ICM
-1
A
Continuous Collector Current
IC
-0.5
A
Practical Power Dissipation*
Ptotp
1.5
W
Ptot
1
5.7
W
mW/°C
-55 to +200
°C
Power Dissipation
at Tamb=25°C
derate above 25°C
Tj:Tstg
Operating and Storage Temperature Range
*The power which can be dissipated assuming the device is mounted in a typical manner on a
P.C.B. with copper equal to 1 inch square minimum
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C)
200
Thermal Resistance (°C/W)
Max Power Dissipation - (Watts)
2.5
2.0
C
1.5
Am
1.0
0.5
0
-40 -20
0
20 40
bie
as
e
nt t
te
m
em
pe
ra
per
tu
re
at u
re
60 80 100 120 140 160 180 200
D=1 (D.C.)
t1
D=t1/tP
tP
100
D=0.5
D=0.2
D=0.1
Single Pulse
0
0.0001
0.001
0.01
0.1
1
10
100
T -Temperature (°C)
Pulse Width (seconds)
Derating curve
Maximum transient thermal impedance
3-286
PARAMETER
SYMBOL
MIN.
Collector-Base Breakdown
Voltage
V(BR)CBO
Collector-Emitter Breakdown
Voltage
TYP.
MAX.
UNIT
CONDITIONS.
-140
V
IC=-100µA
V(BR)CEO
-140
V
IC=-10mA*
Emitter-Base Breakdown
Voltage
V(BR)EBO
-5
V
IE=-100µA
Collector Cut-Off Current
ICBO
-0.1
µA
VCB=-100V
Emitter Cut-Off Current
IEBO
-0.1
µA
VEB=-4V
Collector-Emitter Saturation
Voltage
VCE(sat)
-0.3
-0.3
-0.25
V
V
V
IC=-100mA, IB=-1mA*
IC=-200mA, IB=-5mA*
IC=-500mA, IB=-50mA*
Base-Emitter
Saturation Voltage
VBE(sat)
-0.95
V
IC=-500mA, IB=-50mA*
Base-Emitter
Turn-On Voltage
VBE(on)
V
IC=-500mA, VCE=-2V*
Static Forward Current
Transfer Ratio
hFE
-0.75
300
250
100
3-285
800
IC=-10mA, VCE=-2V*
IC=-200mA, VCE=-2V*
IC=-300mA, VCE=-2V*
ZTX795A
TYPICAL CHARACTERISTICS
1.8
1.6
1.8
IC/IB=40
IC/IB=20
IC/IB=10
Tamb=25°C
1.6
1.4
VCE(sat) - (Volts)
VCE(sat) - (Volts)
1.4
1.2
1.0
0.8
0.6
0.4
0.2
IC/IB=40
1.2
1.0
0.8
0.6
0.4
0.2
0
0
0.1
1
0.001
10
0.1
1
10
IC - Collector Current (Amps)
VCE(sat) v IC
VCE(sat) v IC
+100°C
+25°C
-55°C
VCE=2V
1.6
750
1.4
1.2
1.0
500
0.8
0.6
250
0.4
1.4
0.2
0
0.01
IC - Collector Current (Amps)
VBE(sat) - (Volts)
1.6
0.01
hFE - Typical Gain
0.001
hFE - Normalised Gain
-55°C
+25°C
+100°C
+175°C
-55°C
+25°C
+100°C
+175°C
IC/IB=10
1.2
1.0
0.8
0.6
0.4
0.2
0.01
0.1
10
1
0
0.01
0.1
1
IC - Collector Current (Amps)
IC - Collector Current (Amps)
hFE v IC
VBE(sat) v IC
10
Single Pulse Test at Tamb=25°C
1
-55°C
+25°C
+100°C
VCE=2V
IC - Collector Current (Amps)
1.6
VBE - (Volts)
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0.01
0.1
1
0.1
0.01
0.001
1
10
IC - Collector Current (Amps)
D.C.
1s
100ms
10ms
1.0ms
0.1ms
10
100
VCE - Collector Voltage (Volts)
VBE(on) v IC
Safe Operating Area
3-287
1000