PNP SILICON PLANAR MEDIUM POWER HIGH CURRENT TRANSISTOR ZTX951 ZTX951 ISSUE 4 JUNE 94 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C) PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. Base-Emitter Turn-On Voltage VBE(on) -850 -1000 mV IC=-4A, VCE=-1V* Static Forward Current Transfer Ratio hFE Transition Frequency fT 120 MHz IC=-100mA, VCE=-10V f=50MHz Output Capacitance Cobo 74 pF VCB=-10V, f=1MHz Switching Times ton toff 82 350 ns ns IC=-2A, IB1=-200mA IB2=200mA, VCC=-10V 200 200 120 25 100 100 75 10 IC=-10mA, VCE=-1V* IC=-1A, VCE=-1V* IC=-4A, VCE=-1V* IC=-10A, VCE=-1V* 300 *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2% THERMAL CHARACTERISTICS PARAMETER * * * * * 4 Amps continuous current Up to 15 Amps peak current Very low saturation voltage Excellent gain up to 10 Amps Spice model available C B E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO -100 V Collector-Emitter Voltage VCEO -60 V Emitter-Base Voltage VEBO -6 V Peak Pulse Current ICM -15 A Continuous Collector Current IC SYMBOL MAX. UNIT Practical Power Dissipation* Ptotp Rth(j-amb) Rth(j-case) 150 50 °C/W °C/W Power Dissipation at Tamb=25°C Ptot Operating and Storage Temperature Range Tj:Tstg Thermal Resistance: Junction to Ambient Junction to Case E -4 A 1.58 W 1.2 W -55 to +200 °C *The power which can be dissipated assuming the device is mounted in a typical manner on a P.C.B. with copper equal to 1 inch square minimum 4.0 3.0 Thermal Resistance (°C/W) Max Power Dissipation - (Watts) ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated) Ca se 2.0 te m pe ra tu re Amb ient te mpe ratu 1.0 -40 -20 0 20 40 re 60 80 100 120 140 160 180 200 SYMBOL MIN. TYP. UNIT CONDITIONS. Collector-Base Breakdown Voltage V(BR)CBO -100 -140 V IC=-100µA Collector-Emitter Breakdown Voltag V(BR)CER -100 -140 V IC=-1µA, RB ≤1KΩ Collector-Emitter Breakdown Voltage V(BR)CEO -60 -90 V IC=-10mA* D=0.6 Emitter-Base Breakdown Voltage V(BR)EBO -6 -8 V IE=-100µA D=0.2 Collector Cut-Off Current ICBO -50 -1 µA nA VCB=-80V VCB=-80V, Tamb=100°C Collector Cut-Off Current ICER R ≤1KΩ -50 -1 µA nA VCB=-80V VCB=-80V, Tamb=100°C Emitter Cut-Off Current IEBO -10 nA VEB=-6V Collector-Emitter Saturation Voltage VCE(sat) -15 -60 -120 -220 -50 -100 -160 -300 mV mV mV mV IC=-100mA, IB=-10mA* IC=-1A, IB=-100mA* IC=-2A, IB=-200mA* IC=-4A, IB=-400mA* Base-Emitter Saturation Voltage VBE(sat) -960 -1100 mV IC=-4A, IB=-400mA* D.C. 150 t1 100 PARAMETER D=t1/tP tP 50 D=0.1 0 0.0001 D=0.05 Single Pulse 0.001 0.01 0.1 1 10 100 T -Temperature (°C) Pulse Width (seconds) Derating curve Maximum transient thermal impedance 3-316 3-315 MAX. PNP SILICON PLANAR MEDIUM POWER HIGH CURRENT TRANSISTOR ZTX951 ZTX951 ISSUE 4 JUNE 94 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C) PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. Base-Emitter Turn-On Voltage VBE(on) -850 -1000 mV IC=-4A, VCE=-1V* Static Forward Current Transfer Ratio hFE Transition Frequency fT 120 MHz IC=-100mA, VCE=-10V f=50MHz Output Capacitance Cobo 74 pF VCB=-10V, f=1MHz Switching Times ton toff 82 350 ns ns IC=-2A, IB1=-200mA IB2=200mA, VCC=-10V 200 200 120 25 100 100 75 10 IC=-10mA, VCE=-1V* IC=-1A, VCE=-1V* IC=-4A, VCE=-1V* IC=-10A, VCE=-1V* 300 *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2% THERMAL CHARACTERISTICS PARAMETER * * * * * 4 Amps continuous current Up to 15 Amps peak current Very low saturation voltage Excellent gain up to 10 Amps Spice model available C B E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO -100 V Collector-Emitter Voltage VCEO -60 V Emitter-Base Voltage VEBO -6 V Peak Pulse Current ICM -15 A Continuous Collector Current IC SYMBOL MAX. UNIT Practical Power Dissipation* Ptotp Rth(j-amb) Rth(j-case) 150 50 °C/W °C/W Power Dissipation at Tamb=25°C Ptot Operating and Storage Temperature Range Tj:Tstg Thermal Resistance: Junction to Ambient Junction to Case E -4 A 1.58 W 1.2 W -55 to +200 °C *The power which can be dissipated assuming the device is mounted in a typical manner on a P.C.B. with copper equal to 1 inch square minimum 4.0 3.0 Thermal Resistance (°C/W) Max Power Dissipation - (Watts) ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated) Ca se 2.0 te m pe ra tu re Amb ient te mpe ratu 1.0 -40 -20 0 20 40 re 60 80 100 120 140 160 180 200 SYMBOL MIN. TYP. UNIT CONDITIONS. Collector-Base Breakdown Voltage V(BR)CBO -100 -140 V IC=-100µA Collector-Emitter Breakdown Voltag V(BR)CER -100 -140 V IC=-1µA, RB ≤1KΩ Collector-Emitter Breakdown Voltage V(BR)CEO -60 -90 V IC=-10mA* D=0.6 Emitter-Base Breakdown Voltage V(BR)EBO -6 -8 V IE=-100µA D=0.2 Collector Cut-Off Current ICBO -50 -1 µA nA VCB=-80V VCB=-80V, Tamb=100°C Collector Cut-Off Current ICER R ≤1KΩ -50 -1 µA nA VCB=-80V VCB=-80V, Tamb=100°C Emitter Cut-Off Current IEBO -10 nA VEB=-6V Collector-Emitter Saturation Voltage VCE(sat) -15 -60 -120 -220 -50 -100 -160 -300 mV mV mV mV IC=-100mA, IB=-10mA* IC=-1A, IB=-100mA* IC=-2A, IB=-200mA* IC=-4A, IB=-400mA* Base-Emitter Saturation Voltage VBE(sat) -960 -1100 mV IC=-4A, IB=-400mA* D.C. 150 t1 100 PARAMETER D=t1/tP tP 50 D=0.1 0 0.0001 D=0.05 Single Pulse 0.001 0.01 0.1 1 10 100 T -Temperature (°C) Pulse Width (seconds) Derating curve Maximum transient thermal impedance 3-316 3-315 MAX. ZTX951 TYPICAL CHARACTERISTICS IC/IB=50 VCE(sat) - (Volts) 1.2 1.0 0.8 0.6 1.4 1.0 0.8 0.6 0.4 0.2 0.2 0.01 0.1 1 VCE=1V 1 200 0.8 0.6 100 0.4 -55°C +25°C +100°C +175°C 1.6 300 10 20 IC/IB=10 1.4 0.2 1.2 1.0 0.8 0.6 0.4 0.2 0.001 0.01 0.1 0 10 20 1 0.001 VBE(sat) v IC VCE=1V 1.2 1.0 0.8 0.6 0.4 0.2 0.001 1 hFE v IC IC - Collector Current (Amps) 1.4 0.1 IC - Collector Current (Amps) -55°C +25°C +100°C +175°C 1.6 0.01 IC - Collector Current (Amps) 0.01 0.1 1 10 20 10 D.C. 1s 100ms 10ms 1.0ms 0.1ms 1 0.1 0.1 1 10 IC - Collector Current (Amps) VCE - Collector Voltage (Volts) VBE(on) v IC Safe Operating Area 3-317 10 20 Single Pulse Test at Tamb=25°C 100 VBE - (Volts) 0.1 VCE(sat) v IC 1.0 0 0.01 VCE(sat) v IC 1.2 0 0.001 IC - Collector Current (Amps) +100°C +25°C -55°C 1.4 0 10 20 IC - Collector Current (Amps) hFE - Typical Gain 0.001 IC/IB=10 1.2 0.4 1.6 hFE - Normalised Gain 1.6 1.4 0 -55°C +25°C +175°C Tamb=25°C IC/IB=10 VBE(sat) - (Volts) VCE(sat) - (Volts) 1.6 100