SOT323 SILICON EPITAXIAL SCHOTTKY BARRIER DIODES ZUMD54 ZUMD54C ISSUE 1– DECEMBER 1998 1 1 1 3 2 3 2 3 SINGLE COMMON CATHODE ZUMD54 ZUMD54C Partmark: D8 Partmark: D8C FEATURES: Low VF & High Current Capability APPLICATIONS: PSU, Mobile Telecomms & SCSI ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Continuous Reverse Voltage VR 30 V Forward Current IF 200 mA Forward Voltage @ I F =10mA VF 400 mV Repetitive Peak Forward Current I FRM 300 mA I FSM 600 mA Non Repetitive Forward Current t<1s VALUE UNIT Power Dissipation at T amb=25°C P tot 330 mW Storage Temperature Range T stg -55 to +150 °C JunctionTemperature Tj 125 °C ¤ ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. TYP. Reverse Breakdown Voltage V (BR)R 30 50 Forward Voltage VF 135 200 280 350 530 Reverse Current IR 1.4 2 µA V R=25V Diode Capacitance CD 7.5 10 pF f=1MHz,V R=1V Reverse Recovery Time t rr 5 ns switched from I F=10mA to I R=10mA R L=100 Ω , I R=1mA ¤ Dual Device; For simultaneous continuous use Tj=100°C. MAX. UNIT 240 320 400 500 1000 CONDITIONS. V I R=10 µ A mV mV mV mV mV I F=0.1mA I F=1mA I F=10mA I F=30mA I F=100mA ZUMD54 ZUMD54C TYPICAL CHARACTERISTICS 10m Reverse Current IR (A) Forward Current IF (A) 1 100m 10m +125°C +85°C +25°C 1m 100µ 10µ 0 0.15 0.3 0.45 0.6 0.75 1m +125°C +85°C 100µ 10µ +25°C 1µ 0.9 0 Forward Voltage VF (V) 20 30 IR v VR Characteristics IF v VF Characteristics 15 330 10 5 0 0 10 20 Reverse Voltage VR (V) CT v VR Characteristics 30 PD - Power Dissipation (mW) Diode Capacitance CT (pF) 10 Reverse Voltage VR (V) 270 180 90 0 0 50 100 150 TA - Ambient Temperature ( °C) PD v TA Characteristics