DIODES BAT54TA

BAT54 SERIES
SOT23 SILICON EPITAXIAL
SCHOTTKY BARRIER DIODES
ISSUE 1– SEPTEMBER 1995
1
BAT54 SERIES
✪
1
1
1
TYPICAL CHARACTERISTICS
1
10m
100m
3
1m
10m
+125°C
+85°C
+25°C
1m
+125°C
3
+85°C
100µ
10µ
100µ
10µ
0
0.15
0.3
0.45
0.6
Forward Voltage VF (V)
0.75
1µ
0.9
+25°C
0
10
20
Reverse Voltage VR (V)
30
IR v VR Characteristics
IF v VF Characteristics
15
180
90
0
10
20
Reverse Voltage VR (V)
0
30
CT v VR Characteristics
3
3
2
2
0
50
100
150
TA - Ambient Temperature ( °C)
PD v TA Characteristics
BAT54S
BAT54C
SINGLE
COMMON
ANODE
SERIES
COMMON
CATHODE
Pin Configuration
L4Z
L42
L44
L43
Partmarking Detail
Device Type
FEATURES: Low VF & High Current Capability
APPLICATIONS: PSU, Mobile Telecomms & SCSI
SYMBOL
VALUE
UNIT
Continuous Reverse Voltage
VR
30
V
Forward Current
IF
200
mA
Forward Voltage @ IF =10mA
VF
400
mV
Repetitive Peak Forward Current
I FRM
300
mA
Non Repetitive Forward Current t<1s
I FSM
600
mA
Power Dissipation at Tamb=25°C
Ptot
330
mW
Storage Temperature Range
Tstg
-55 to +150
°C
JunctionTemperature
Tj
125
°C
¤
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL
MIN.
TYP.
Reverse Breakdown
Voltage
V(BR)R
30
50
Forward Voltage
VF
135
200
280
350
530
240
320
400
500
1000
MAX. UNIT
CONDITIONS.
V
IR=10µ A
mV
mV
mV
mV
mV
IF=0.1mA
IF=1mA
IF=10mA
IF=30mA
IF=100mA
Reverse Current
IR
2.5
4
µA
VR=25V
Diode Capacitance
CD
7.5
10
pF
f=1MHz,VR=1V
Reverse Recover
Time
trr
5
ns
switched from
IF=10mA to IR=10mA
RL=100Ω , Measured
at IR=1mA
¤ Dual Device; For simultaneous continuous use Tj=100°C.
3-5
3
BAT54A
PARAMETER
10
5
2
BAT54
ABSOLUTE MAXIMUM RATINGS.
330
270
0
2
1
3-4
BAT54 SERIES
SOT23 SILICON EPITAXIAL
SCHOTTKY BARRIER DIODES
ISSUE 1– SEPTEMBER 1995
1
BAT54 SERIES
✪
1
1
1
TYPICAL CHARACTERISTICS
1
10m
100m
3
1m
10m
+125°C
+85°C
+25°C
1m
+125°C
3
+85°C
100µ
10µ
100µ
10µ
0
0.15
0.3
0.45
0.6
Forward Voltage VF (V)
0.75
1µ
0.9
+25°C
0
10
20
Reverse Voltage VR (V)
30
IR v VR Characteristics
IF v VF Characteristics
15
180
90
0
10
20
Reverse Voltage VR (V)
0
30
CT v VR Characteristics
3
3
2
2
0
50
100
150
TA - Ambient Temperature ( °C)
PD v TA Characteristics
BAT54S
BAT54C
SINGLE
COMMON
ANODE
SERIES
COMMON
CATHODE
Pin Configuration
L4Z
L42
L44
L43
Partmarking Detail
Device Type
FEATURES: Low VF & High Current Capability
APPLICATIONS: PSU, Mobile Telecomms & SCSI
SYMBOL
VALUE
UNIT
Continuous Reverse Voltage
VR
30
V
Forward Current
IF
200
mA
Forward Voltage @ IF =10mA
VF
400
mV
Repetitive Peak Forward Current
I FRM
300
mA
Non Repetitive Forward Current t<1s
I FSM
600
mA
Power Dissipation at Tamb=25°C
Ptot
330
mW
Storage Temperature Range
Tstg
-55 to +150
°C
JunctionTemperature
Tj
125
°C
¤
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL
MIN.
TYP.
Reverse Breakdown
Voltage
V(BR)R
30
50
Forward Voltage
VF
135
200
280
350
530
240
320
400
500
1000
MAX. UNIT
CONDITIONS.
V
IR=10µ A
mV
mV
mV
mV
mV
IF=0.1mA
IF=1mA
IF=10mA
IF=30mA
IF=100mA
Reverse Current
IR
2.5
4
µA
VR=25V
Diode Capacitance
CD
7.5
10
pF
f=1MHz,VR=1V
Reverse Recover
Time
trr
5
ns
switched from
IF=10mA to IR=10mA
RL=100Ω , Measured
at IR=1mA
¤ Dual Device; For simultaneous continuous use Tj=100°C.
3-5
3
BAT54A
PARAMETER
10
5
2
BAT54
ABSOLUTE MAXIMUM RATINGS.
330
270
0
2
1
3-4