BAT54 SERIES SOT23 SILICON EPITAXIAL SCHOTTKY BARRIER DIODES ISSUE 1 SEPTEMBER 1995 1 BAT54 SERIES ✪ 1 1 1 TYPICAL CHARACTERISTICS 1 10m 100m 3 1m 10m +125°C +85°C +25°C 1m +125°C 3 +85°C 100µ 10µ 100µ 10µ 0 0.15 0.3 0.45 0.6 Forward Voltage VF (V) 0.75 1µ 0.9 +25°C 0 10 20 Reverse Voltage VR (V) 30 IR v VR Characteristics IF v VF Characteristics 15 180 90 0 10 20 Reverse Voltage VR (V) 0 30 CT v VR Characteristics 3 3 2 2 0 50 100 150 TA - Ambient Temperature ( °C) PD v TA Characteristics BAT54S BAT54C SINGLE COMMON ANODE SERIES COMMON CATHODE Pin Configuration L4Z L42 L44 L43 Partmarking Detail Device Type FEATURES: Low VF & High Current Capability APPLICATIONS: PSU, Mobile Telecomms & SCSI SYMBOL VALUE UNIT Continuous Reverse Voltage VR 30 V Forward Current IF 200 mA Forward Voltage @ IF =10mA VF 400 mV Repetitive Peak Forward Current I FRM 300 mA Non Repetitive Forward Current t<1s I FSM 600 mA Power Dissipation at Tamb=25°C Ptot 330 mW Storage Temperature Range Tstg -55 to +150 °C JunctionTemperature Tj 125 °C ¤ ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. TYP. Reverse Breakdown Voltage V(BR)R 30 50 Forward Voltage VF 135 200 280 350 530 240 320 400 500 1000 MAX. UNIT CONDITIONS. V IR=10µ A mV mV mV mV mV IF=0.1mA IF=1mA IF=10mA IF=30mA IF=100mA Reverse Current IR 2.5 4 µA VR=25V Diode Capacitance CD 7.5 10 pF f=1MHz,VR=1V Reverse Recover Time trr 5 ns switched from IF=10mA to IR=10mA RL=100Ω , Measured at IR=1mA ¤ Dual Device; For simultaneous continuous use Tj=100°C. 3-5 3 BAT54A PARAMETER 10 5 2 BAT54 ABSOLUTE MAXIMUM RATINGS. 330 270 0 2 1 3-4 BAT54 SERIES SOT23 SILICON EPITAXIAL SCHOTTKY BARRIER DIODES ISSUE 1 SEPTEMBER 1995 1 BAT54 SERIES ✪ 1 1 1 TYPICAL CHARACTERISTICS 1 10m 100m 3 1m 10m +125°C +85°C +25°C 1m +125°C 3 +85°C 100µ 10µ 100µ 10µ 0 0.15 0.3 0.45 0.6 Forward Voltage VF (V) 0.75 1µ 0.9 +25°C 0 10 20 Reverse Voltage VR (V) 30 IR v VR Characteristics IF v VF Characteristics 15 180 90 0 10 20 Reverse Voltage VR (V) 0 30 CT v VR Characteristics 3 3 2 2 0 50 100 150 TA - Ambient Temperature ( °C) PD v TA Characteristics BAT54S BAT54C SINGLE COMMON ANODE SERIES COMMON CATHODE Pin Configuration L4Z L42 L44 L43 Partmarking Detail Device Type FEATURES: Low VF & High Current Capability APPLICATIONS: PSU, Mobile Telecomms & SCSI SYMBOL VALUE UNIT Continuous Reverse Voltage VR 30 V Forward Current IF 200 mA Forward Voltage @ IF =10mA VF 400 mV Repetitive Peak Forward Current I FRM 300 mA Non Repetitive Forward Current t<1s I FSM 600 mA Power Dissipation at Tamb=25°C Ptot 330 mW Storage Temperature Range Tstg -55 to +150 °C JunctionTemperature Tj 125 °C ¤ ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. TYP. Reverse Breakdown Voltage V(BR)R 30 50 Forward Voltage VF 135 200 280 350 530 240 320 400 500 1000 MAX. UNIT CONDITIONS. V IR=10µ A mV mV mV mV mV IF=0.1mA IF=1mA IF=10mA IF=30mA IF=100mA Reverse Current IR 2.5 4 µA VR=25V Diode Capacitance CD 7.5 10 pF f=1MHz,VR=1V Reverse Recover Time trr 5 ns switched from IF=10mA to IR=10mA RL=100Ω , Measured at IR=1mA ¤ Dual Device; For simultaneous continuous use Tj=100°C. 3-5 3 BAT54A PARAMETER 10 5 2 BAT54 ABSOLUTE MAXIMUM RATINGS. 330 270 0 2 1 3-4