ETC ZVN0535A

N-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ZVN0535A
800
400
600
ID(On)Drain Current (mA)
VGS=
10V
8V
6V
700
5V
500
400
300
4V
200
100
3V
VGS=
10V
6V
5V
300
0
10
20
30
40
50
60
70
80
90
ABSOLUTE MAXIMUM RATINGS.
100
3V
0
4
12
16
20
SYMBOL
Drain-Source Voltage
VDS
VALUE
350
UNIT
V
Continuous Drain Current at Tamb=25°C
ID
90
mA
VDS - Drain Source Voltage (Volts)
Pulsed Drain Current
IDM
600
mA
Output Characteristics
Saturation Characteristics
Gate Source Voltage
VGS
± 20
V
Power Dissipation at Tamb=25°C
Ptot
700
mW
Operating and Storage Temperature Range
Tj:Tstg
-55 to +150
°C
500
16
ID=
250mA
12
8
4
100mA
50mA
VDS=
25V
400
4
6
8
10
SYMBOL MIN.
Drain-Source Breakdown
Voltage
BVDSS
350
200
Gate-Source Threshold
Voltage
VGS(th)
1
100
Gate-Body Leakage
Zero Gate Voltage Drain
Current
0
1
2
3
4
5
6
7
8
9
10
VGS-Gate Source Voltage (Volts)
Transfer Characteristics
Voltage Saturation Characteristics
250
80
60
Ciss
40
20
Coss
Crss
0
10
20
30
40
gfs-Transconductance (mS)
100
VDS-Drain Source Voltage (Volts)
3
V
ID=1mA, VDS= VGS
IGSS
20
nA
VGS=± 20V, VDS=0V
IDSS
10
400
µA
µA
VDS=350 V, VGS=0
VDS=280 V, VGS=0V,
T=125°C(2)
mA
VDS=25 V, VGS=10V
Ω
VGS=10V,ID=100mA
mS
VDS=25V,ID=100mA
On-State Drain Current(1)
ID(on)
Static Drain-Source On-State
Resistance (1)
RDS(on)
150
50
100
Input Capacitance (2)
Ciss
70
pF
100
Common Source Output
Capacitance (2)
Coss
10
pF
Reverse Transfer Capacitance Crss
(2)
4
pF
Turn-On Delay Time (2)(3)
td(on)
7
ns
Rise Time (2)(3)
tr
7
ns
Turn-Off Delay Time (2)(3)
td(off)
16
ns
Fall Time (2)(3)
tf
10
ns
50
0
100
200
300
400
500
Transconductance v drain current
3-354
ID=1mA, VGS=0V
150
ID(on)- Drain Current (mA)
Capacitance v drain-source voltage
MAX. UNIT CONDITIONS.
V
Forward Transconductance(1)(2gfs
)
VDS=
25V
200
0
50
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
300
0
2
0
PARAMETER
VDS - Drain Source Voltage (Volts)
VGS-Gate Source Voltage (Volts)
C-Capacitance (pF)
8
S
E-Line
TO92 Compatible
200
100
20
0
D
G
4V
0
0
ID(On) Drain Current (mA)
VDS-Drain Source Voltage (Volts)
ID(On) On-State Drain Current (mA)
TYPICAL CHARACTERISTICS
ZVN0535A
ISSUE 2 – MARCH 94
FEATURES
* 350 Volt VDS
* RDS(on)=50Ω
3-353
VDS=25 V, VGS=0V, f=1MHz
VDD ≈ 25V, ID=100mA
(
1
N-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ZVN0535A
800
400
600
ID(On)Drain Current (mA)
VGS=
10V
8V
6V
700
5V
500
400
300
4V
200
100
3V
VGS=
10V
6V
5V
300
0
10
20
30
40
50
60
70
80
90
ABSOLUTE MAXIMUM RATINGS.
100
3V
0
4
12
16
20
SYMBOL
Drain-Source Voltage
VDS
VALUE
350
UNIT
V
Continuous Drain Current at Tamb=25°C
ID
90
mA
VDS - Drain Source Voltage (Volts)
Pulsed Drain Current
IDM
600
mA
Output Characteristics
Saturation Characteristics
Gate Source Voltage
VGS
± 20
V
Power Dissipation at Tamb=25°C
Ptot
700
mW
Operating and Storage Temperature Range
Tj:Tstg
-55 to +150
°C
500
16
ID=
250mA
12
8
4
100mA
50mA
VDS=
25V
400
4
6
8
10
SYMBOL MIN.
Drain-Source Breakdown
Voltage
BVDSS
350
200
Gate-Source Threshold
Voltage
VGS(th)
1
100
Gate-Body Leakage
Zero Gate Voltage Drain
Current
0
1
2
3
4
5
6
7
8
9
10
VGS-Gate Source Voltage (Volts)
Transfer Characteristics
Voltage Saturation Characteristics
250
80
60
Ciss
40
20
Coss
Crss
0
10
20
30
40
gfs-Transconductance (mS)
100
VDS-Drain Source Voltage (Volts)
3
V
ID=1mA, VDS= VGS
IGSS
20
nA
VGS=± 20V, VDS=0V
IDSS
10
400
µA
µA
VDS=350 V, VGS=0
VDS=280 V, VGS=0V,
T=125°C(2)
mA
VDS=25 V, VGS=10V
Ω
VGS=10V,ID=100mA
mS
VDS=25V,ID=100mA
On-State Drain Current(1)
ID(on)
Static Drain-Source On-State
Resistance (1)
RDS(on)
150
50
100
Input Capacitance (2)
Ciss
70
pF
100
Common Source Output
Capacitance (2)
Coss
10
pF
Reverse Transfer Capacitance Crss
(2)
4
pF
Turn-On Delay Time (2)(3)
td(on)
7
ns
Rise Time (2)(3)
tr
7
ns
Turn-Off Delay Time (2)(3)
td(off)
16
ns
Fall Time (2)(3)
tf
10
ns
50
0
100
200
300
400
500
Transconductance v drain current
3-354
ID=1mA, VGS=0V
150
ID(on)- Drain Current (mA)
Capacitance v drain-source voltage
MAX. UNIT CONDITIONS.
V
Forward Transconductance(1)(2gfs
)
VDS=
25V
200
0
50
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
300
0
2
0
PARAMETER
VDS - Drain Source Voltage (Volts)
VGS-Gate Source Voltage (Volts)
C-Capacitance (pF)
8
S
E-Line
TO92 Compatible
200
100
20
0
D
G
4V
0
0
ID(On) Drain Current (mA)
VDS-Drain Source Voltage (Volts)
ID(On) On-State Drain Current (mA)
TYPICAL CHARACTERISTICS
ZVN0535A
ISSUE 2 – MARCH 94
FEATURES
* 350 Volt VDS
* RDS(on)=50Ω
3-353
VDS=25 V, VGS=0V, f=1MHz
VDD ≈ 25V, ID=100mA
(
1
ZVN0535A
TYPICAL CHARACTERISTICS
10
VGS-Gate Source Voltage (Volts)
gfs-Forward Transconductance (mS)
VDS=100V 200V 360V
250
VDS=25V
200
150
100
50
0
2
4
6
8
10
6
4
2
0
0
VGS-Gate Source Voltage (Volts)
0.4
0.8 1.2 1.6
2.0 2.4 2.8
3.2 3.6 4.0
Q-Charge (nC)
Transconductance v gate-source voltage
Gate charge v gate-source voltage
100
90
80
70
60
2.4
ID=
250mA
50
40
100mA
50mA
30
20
10
1
2
3
4
5 6 7 8 9 10
20
Normalised RDS(on) and VGS(th)
RDS(ON) -Drain Source Resistance (Ω)
ID=500mA
8
VGS-Gate Source Voltage (Volts)
On-resistance vs gate-source voltage
)
on
S(
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
ce
ur
So
ni
a
Dr
Gate T
hre
ce
an
st
si
e
R
RD
VGS=10V
ID=0.1A
VGS=VDS
ID=1mA
shold V
oltage
V GS(th
)
0.4
-80 -60 -40 -20 0 20 40 60 80 100 120 140 160
Tj-Junction Temperature (C°)
Normalised RDS(on) and VGS(th) vs Temperature
3-355