N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ZVN2106A ISSUE 2 – MARCH 94 FEATURES * 60 Volt VDS * RDS(on)=2Ω 2.0 VGS= 10V 9V VDS-Drain Source Voltage (Volts) ID(On) -On-State Drain Current (Amps) TYPICAL CHARACTERISTICS 4 3 8V 7V 2 6V 5V 1 4V 3V 0 0 1 2 3 4 5 1.8 1.6 1.4 D G 1.2 1.0 0.8 0.6 0.4 0.5A 0.2 0.25A 0 0 RDS(ON) -Drain Source On-Resistance (Ω) ID(On)-On-State Drain Current (Amps) 3 2 1 0 2 3 4 5 6 7 8 8 10 9 10 10 ID= 1A 0.5A 0.25A 1 0.1 1 2 3 4 5 6 7 8 9 10 0.7 1.6 1.4 ain Dr 1.2 eR nc ta s i s Re VGS=10V ce ID=1A ur So 1.0 0.8 Gate Thresh old 0.6 gfs-Transconductance (S) n) (o DS 1.8 VGS=VDS ID=1mA Voltage VGS (th ) 0.4 -80 -60 -40 -20 SYMBOL VALUE UNIT Drain-Source Voltage V DS 60 V Continuous Drain Current at T amb=25°C ID 450 mA Pulsed Drain Current I DM 8 A Gate Source Voltage V GS ± 20 V Power Dissipation at T amb=25°C P tot 700 mW Operating and Storage Temperature Range T j :T stg -55 to +150 °C PARAMETER SYMBOL MIN. Drain-Source Breakdown Voltage BV DSS 60 Gate-Source Threshold Voltage V GS(th) 0.8 Gate-Body Leakage MAX. UNIT CONDITIONS. V I D=1mA, V GS=0V 2.4 V ID=1mA, V DS= V GS I GSS 20 nA V GS=± 20V, V DS=0V Zero Gate Voltage Drain Current I DSS 500 100 nA µA V DS=60 V, V GS=0 V DS=48 V, V GS=0V, T=125°C (2) On-State Drain Current(1) I D(on) A V DS=18V, V GS=10V Static Drain-Source On-State Resistance (1) R DS(on) Ω V GS=10V,I D=1A Forward Transconductance (1)(2) g fs mS V DS=18V,I D=1A Input Capacitance (2) C iss 75 pF Common Source Output Capacitance (2) C oss 45 pF Reverse Transfer Capacitance (2) C rss 20 pF On-resistance v gate-source voltage 2.4 2.0 PARAMETER 20 VGS-Gate Source Voltage (Volts) Transfer Characteristics 2.2 ABSOLUTE MAXIMUM RATINGS. ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). VGS-Gate Source Voltage (Volts) Normalised RDS(on) and VGS(th) 6 Voltage Saturation Characteristics VDS= 10V 1 4 VGS-Gate Source Voltage (Volts) Saturation Characteristics 0 2 0 20 40 60 80 100 120 140 160 0.6 0.5 0.4 VDS=10V 0.3 0.2 0.1 0 0 Tj-Junction Temperature (C°) 1 2 3 4 2 2 300 5 ID- Drain Current (Amps) Normalised RDS(on) and VGS(th) vs Temperature 3-362 S E-Line TO92 Compatible ID= 1A VDS - Drain Source Voltage (Volts) 4 ZVN2106A Transconductance v drain current 3-361 V DS=18 V, V GS=0V, f=1MHz N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ZVN2106A ISSUE 2 – MARCH 94 FEATURES * 60 Volt VDS * RDS(on)=2Ω 2.0 VGS= 10V 9V VDS-Drain Source Voltage (Volts) ID(On) -On-State Drain Current (Amps) TYPICAL CHARACTERISTICS 4 3 8V 7V 2 6V 5V 1 4V 3V 0 0 1 2 3 4 5 1.8 1.6 1.4 D G 1.2 1.0 0.8 0.6 0.4 0.5A 0.2 0.25A 0 0 RDS(ON) -Drain Source On-Resistance (Ω) ID(On)-On-State Drain Current (Amps) 3 2 1 0 2 3 4 5 6 7 8 8 10 9 10 10 ID= 1A 0.5A 0.25A 1 0.1 1 2 3 4 5 6 7 8 9 10 0.7 1.6 1.4 ain Dr 1.2 eR nc ta s i s Re VGS=10V ce ID=1A ur So 1.0 0.8 Gate Thresh old 0.6 gfs-Transconductance (S) n) (o DS 1.8 VGS=VDS ID=1mA Voltage VGS (th ) 0.4 -80 -60 -40 -20 SYMBOL VALUE UNIT Drain-Source Voltage V DS 60 V Continuous Drain Current at T amb=25°C ID 450 mA Pulsed Drain Current I DM 8 A Gate Source Voltage V GS ± 20 V Power Dissipation at T amb=25°C P tot 700 mW Operating and Storage Temperature Range T j :T stg -55 to +150 °C PARAMETER SYMBOL MIN. Drain-Source Breakdown Voltage BV DSS 60 Gate-Source Threshold Voltage V GS(th) 0.8 Gate-Body Leakage MAX. UNIT CONDITIONS. V I D=1mA, V GS=0V 2.4 V ID=1mA, V DS= V GS I GSS 20 nA V GS=± 20V, V DS=0V Zero Gate Voltage Drain Current I DSS 500 100 nA µA V DS=60 V, V GS=0 V DS=48 V, V GS=0V, T=125°C (2) On-State Drain Current(1) I D(on) A V DS=18V, V GS=10V Static Drain-Source On-State Resistance (1) R DS(on) Ω V GS=10V,I D=1A Forward Transconductance (1)(2) g fs mS V DS=18V,I D=1A Input Capacitance (2) C iss 75 pF Common Source Output Capacitance (2) C oss 45 pF Reverse Transfer Capacitance (2) C rss 20 pF On-resistance v gate-source voltage 2.4 2.0 PARAMETER 20 VGS-Gate Source Voltage (Volts) Transfer Characteristics 2.2 ABSOLUTE MAXIMUM RATINGS. ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). VGS-Gate Source Voltage (Volts) Normalised RDS(on) and VGS(th) 6 Voltage Saturation Characteristics VDS= 10V 1 4 VGS-Gate Source Voltage (Volts) Saturation Characteristics 0 2 0 20 40 60 80 100 120 140 160 0.6 0.5 0.4 VDS=10V 0.3 0.2 0.1 0 0 Tj-Junction Temperature (C°) 1 2 3 4 2 2 300 5 ID- Drain Current (Amps) Normalised RDS(on) and VGS(th) vs Temperature 3-362 S E-Line TO92 Compatible ID= 1A VDS - Drain Source Voltage (Volts) 4 ZVN2106A Transconductance v drain current 3-361 V DS=18 V, V GS=0V, f=1MHz ZVN2106A TYPICAL CHARACTERISTICS 0.7 100 C-Capacitance (pF) gfs-Transconductance (S) 0.6 0.5 0.4 VDS=10V 0.3 0.2 0.1 60 Ciss 40 20 Coss Crss 0 0 2 4 6 8 0 10 VGS-Gate Source Voltage (Volts) 14 ID=3A 12 10 8 6 4 2 0 0 0.5 1.0 1.5 2.0 2.5 20 30 40 VDS-Drain Source Voltage (Volts) VDD= 20V 30V 50V 16 10 Capacitance v drain-source voltage Transconductance v gate-source voltage VGS-Gate Source Voltage (Volts) 80 3.0 Q-Charge (nC) Gate charge v gate-source voltage 3-363 50