ZVN2535A VGS= 10V 6V 500 ID(On)Drain Current (mA) ID(On) Drain Current (mA) 700 600 500 400 4V 300 200 3V 100 450 400 VGS= 10V 350 4V 30 40 50 60 70 80 90 200 150 3V 100 50 100 0 5 15 20 VDS - Drain Source Voltage (Volts) Output Characteristics Saturation Characteristics 25 400 20 18 16 14 12 10 ID= 250mA 8 6 4 100mA 50mA 2 300 VDS= 10V 1 2 3 4 5 6 7 8 9 10 Coss Crss 0 10 20 30 40 gfs-Transconductance (mS) 25 VDS-Drain Source Voltage (Volts) mA 1 A Gate Source Voltage V GS ± 20 V Power Dissipation at T amb=25°C P tot 700 mW Operating and Storage Temperature Range T j :T stg -55 to +150 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). 1 Gate-Body Leakage Zero Gate Voltage Drain Current 1 2 3 4 5 6 7 8 9 10 I D=1mA, V GS=0V 3 V ID=1mA, V DS= V GS I GSS 20 nA V GS=± 20V, V DS=0V I DSS 10 400 µA µA V DS=350V, V GS=0 V DS=280V, V GS=0V, T=125°C (2) mA V DS=25V, V GS=10V Ω V GS=10V,I D=100mA mS V DS=25V,I D=100mA On-State Drain Current(1) I D(on) Static Drain-Source On-State Resistance (1) R DS(on) 50 0 100 200 300 400 250 35 100 Input Capacitance (2) C iss 70 pF Common Source Output Capacitance (2) C oss 10 pF Reverse Transfer Capacitance (2) C rss 4 pF Turn-On Delay Time (2)(3) t d(on) 7 ns Rise Time (2)(3) tr 7 ns Turn-Off Delay Time (2)(3) t d(off) 16 ns Fall Time (2)(3) tf 10 ns 150 100 MAX. UNIT CONDITIONS. V Forward Transconductance (1)( g fs 2) 200 500 Transconductance v drain current 3-373 90 I DM V GS(th) ID- Drain Current (mA) Capacitance v drain-source voltage ID Pulsed Drain Current Gate-Source Threshold Voltage 0 50 Continuous Drain Current at T amb=25°C 100 Transfer Characteristics Ciss V 200 250 50 UNIT 350 350 Voltage Saturation Characteristics 75 VALUE V DS BV DSS VGS-Gate Source Voltage (Volts) 100 SYMBOL Drain-Source Voltage SYMBOL MIN. 0 125 PARAMETER Drain-Source Breakdown Voltage 0 0 ABSOLUTE MAXIMUM RATINGS. PARAMETER VGS-Gate Source Voltage (Volts) C-Capacitance (pF) 10 VDS - Drain Source Voltage (Volts) ID(On) Drain Current (mA) VDS-Drain Source Voltage (Volts) 20 S E-Line TO92 Compatible 250 0 10 D G 300 0 0 ZVN2535A ISSUE 2 – MARCH 94 FEATURES * 350 Volt VDS RDS(on)=35Ω TYPICAL CHARACTERISTICS 800 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET 3-372 Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% V DS=25 V, V GS=0V, f=1MHz V DD ≈25V, I D=100mA ( 1 ) ZVN2535A VGS= 10V 6V 500 ID(On)Drain Current (mA) ID(On) Drain Current (mA) 700 600 500 400 4V 300 200 3V 100 450 400 VGS= 10V 350 4V 30 40 50 60 70 80 90 200 150 3V 100 50 100 0 5 15 20 VDS - Drain Source Voltage (Volts) Output Characteristics Saturation Characteristics 25 400 20 18 16 14 12 10 ID= 250mA 8 6 4 100mA 50mA 2 300 VDS= 10V 1 2 3 4 5 6 7 8 9 10 Coss Crss 0 10 20 30 40 gfs-Transconductance (mS) 25 VDS-Drain Source Voltage (Volts) mA 1 A Gate Source Voltage V GS ± 20 V Power Dissipation at T amb=25°C P tot 700 mW Operating and Storage Temperature Range T j :T stg -55 to +150 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). 1 Gate-Body Leakage Zero Gate Voltage Drain Current 1 2 3 4 5 6 7 8 9 10 I D=1mA, V GS=0V 3 V ID=1mA, V DS= V GS I GSS 20 nA V GS=± 20V, V DS=0V I DSS 10 400 µA µA V DS=350V, V GS=0 V DS=280V, V GS=0V, T=125°C (2) mA V DS=25V, V GS=10V Ω V GS=10V,I D=100mA mS V DS=25V,I D=100mA On-State Drain Current(1) I D(on) Static Drain-Source On-State Resistance (1) R DS(on) 50 0 100 200 300 400 250 35 100 Input Capacitance (2) C iss 70 pF Common Source Output Capacitance (2) C oss 10 pF Reverse Transfer Capacitance (2) C rss 4 pF Turn-On Delay Time (2)(3) t d(on) 7 ns Rise Time (2)(3) tr 7 ns Turn-Off Delay Time (2)(3) t d(off) 16 ns Fall Time (2)(3) tf 10 ns 150 100 MAX. UNIT CONDITIONS. V Forward Transconductance (1)( g fs 2) 200 500 Transconductance v drain current 3-373 90 I DM V GS(th) ID- Drain Current (mA) Capacitance v drain-source voltage ID Pulsed Drain Current Gate-Source Threshold Voltage 0 50 Continuous Drain Current at T amb=25°C 100 Transfer Characteristics Ciss V 200 250 50 UNIT 350 350 Voltage Saturation Characteristics 75 VALUE V DS BV DSS VGS-Gate Source Voltage (Volts) 100 SYMBOL Drain-Source Voltage SYMBOL MIN. 0 125 PARAMETER Drain-Source Breakdown Voltage 0 0 ABSOLUTE MAXIMUM RATINGS. PARAMETER VGS-Gate Source Voltage (Volts) C-Capacitance (pF) 10 VDS - Drain Source Voltage (Volts) ID(On) Drain Current (mA) VDS-Drain Source Voltage (Volts) 20 S E-Line TO92 Compatible 250 0 10 D G 300 0 0 ZVN2535A ISSUE 2 – MARCH 94 FEATURES * 350 Volt VDS RDS(on)=35Ω TYPICAL CHARACTERISTICS 800 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET 3-372 Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% V DS=25 V, V GS=0V, f=1MHz V DD ≈25V, I D=100mA ( 1 ) ZVN2535A 250 200 150 100 50 0 2 4 6 8 10 14 4V 10V 40 30 20 10 100 1000 8 6 4 2 0 0 0.5 1.0 1.5 2.0 2.5 3.0 2.4 ) on S( 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 ce ur So e nc ta is s Re RD VGS=10V ID=100mA nai Dr VGS=VDS ID=1mA Gate T hresho ld Volt age VG S(th) 0.4 -80 -60 -40 -20 0 20 40 60 80 100 120 140 160 T-Temperature (C°) ID-Drain Current (mA) On-resistance v drain current 350V 10 Gate charge v gate-source voltage Normalised RDS(on) and VGS(th) RDS(on)-Drain Source On Resistance (Ω) VGS=3V ID= 300mA Q-Charge (nC) Transconductance v gate-source voltage 100 90 80 70 60 50 200V 12 VGS-Gate Source Voltage (Volts) 10 VDS= 100V 16 VGS-Gate Source Voltage (Volts) gfs-Forward Transconductance (mS) TYPICAL CHARACTERISTICS Normalised RDS(on) and VGS(th) vs Temperature 3-374