N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ZVNL120A TYPICAL CHARACTERISTICS VGS= 10V 8V 6V 1.2 5V 1.0 0.8 4V 0.6 0.4 3V 0.2 2V 0 5 10 15 20 25 30 35 40 45 4V 0.6 3V 0.2 2V 50 0 6 8 Saturation Characteristics 20V 1.2 1.0 10V 0.8 0.6 0.4 0.2 0 1 2 3 4 5 6 7 8 9 10 500 400 300 200 100 C-Capacitance (pF) VDS=25V V 180 mA Pulsed Drain Current I DM 2 A V GS ± 20 V Power Dissipation at T amb=25°C P tot 700 mW Operating and Storage Temperature Range T j:T stg -55 to +150 °C 0.5 Gate-Body Leakage 1 2 3 4 5 6 7 8 9 10 80 60 Ciss 40 20 10 20 30 UNIT Gate Source Voltage V GS(th) 40 Capacitance v drain-source voltage 3-402 200 ID Gate-Source Threshold Voltage VDS-Drain Source Voltage (Volts) ID- Drain Current (Amps) V DS Continuous Drain Current at T amb=25°C 100 0 Transconductance v drain current Drain-Source Voltage 200 Coss Crss 0 VALUE 200 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 SYMBOL SYMBOL MIN. MAX. UNIT CONDITIONS. 100 400 PARAMETER BV DSS Transconductance v gate-source voltage 500 ABSOLUTE MAXIMUM RATINGS. Drain-Source Breakdown Voltage VGS-Gate Source Voltage (Volts) Transfer Characteristics E-Line TO92 Compatible PARAMETER 0 10 S ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). VDS=25V 300 VGS-Gate Source Voltage (Volts) gfs-Transconductance (mS) 4 Output Characteristics 1.4 0 2 VDS - Drain Source Voltage (Volts) VDS= 40V D G APPLICATIONS * Telephone handsets 0.4 VDS - Drain Source Voltage (Volts) 1.6 ISSUE 2 – MARCH 94 FEATURES * 200 Volt VDS * RDS(on)=10Ω * Low threshold 0.8 0 0 ID(On) Drain Current (Amps) ID(On)Drain Current (Amps) 1.4 VGS= 10V 8V 6V 1.0 gfs-Transconductance (mS) ID(On) Drain Current (Amps) 1.6 ZVNL120A 50 V I D=1mA, V GS=0V 1.5 V ID=1mA, V DS= V GS I GSS 100 nA V GS=± 20V, V DS=0V Zero Gate Voltage Drain Current I DSS 10 100 µA µA V DS=200 V, V GS=0 V DS=160 V, V GS=0V, T=125°C (2) On-State Drain Current(1) I D(on) mA V DS=25 V, V GS=5V Static Drain-Source On-State Resistance (1) R DS(on) Ω Ω V GS=5V,I D=250mA V GS=3V, I D=125mA Forward Transconductance (1)(2) g fs mS V DS=25V,I D=250mA Input Capacitance (2) C iss 85 pF Common Source Output Capacitance (2) C oss 20 pF Reverse Transfer Capacitance (2) C rss 7 pF Turn-On Delay Time (2)(3) t d(on) 8 ns Rise Time (2)(3) tr 8 ns Turn-Off Delay Time (2)(3) t d(off) 20 ns Fall Time (2)(3) tf 12 ns 500 10 10 200 V DS=25 V, V GS=0V, f=1MHz V DD ≈25V, I D=250mA (1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% (2) Sample test. (3) Switching times measured with 50Ω source impedance and <5ns rise time on a pulse generator 3-401 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ZVNL120A TYPICAL CHARACTERISTICS VGS= 10V 8V 6V 1.2 5V 1.0 0.8 4V 0.6 0.4 3V 0.2 2V 0 5 10 15 20 25 30 35 40 45 4V 0.6 3V 0.2 2V 50 0 6 8 Saturation Characteristics 20V 1.2 1.0 10V 0.8 0.6 0.4 0.2 0 1 2 3 4 5 6 7 8 9 10 500 400 300 200 100 C-Capacitance (pF) VDS=25V V 180 mA Pulsed Drain Current I DM 2 A V GS ± 20 V Power Dissipation at T amb=25°C P tot 700 mW Operating and Storage Temperature Range T j:T stg -55 to +150 °C 0.5 Gate-Body Leakage 1 2 3 4 5 6 7 8 9 10 80 60 Ciss 40 20 10 20 30 UNIT Gate Source Voltage V GS(th) 40 Capacitance v drain-source voltage 3-402 200 ID Gate-Source Threshold Voltage VDS-Drain Source Voltage (Volts) ID- Drain Current (Amps) V DS Continuous Drain Current at T amb=25°C 100 0 Transconductance v drain current Drain-Source Voltage 200 Coss Crss 0 VALUE 200 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 SYMBOL SYMBOL MIN. MAX. UNIT CONDITIONS. 100 400 PARAMETER BV DSS Transconductance v gate-source voltage 500 ABSOLUTE MAXIMUM RATINGS. Drain-Source Breakdown Voltage VGS-Gate Source Voltage (Volts) Transfer Characteristics E-Line TO92 Compatible PARAMETER 0 10 S ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). VDS=25V 300 VGS-Gate Source Voltage (Volts) gfs-Transconductance (mS) 4 Output Characteristics 1.4 0 2 VDS - Drain Source Voltage (Volts) VDS= 40V D G APPLICATIONS * Telephone handsets 0.4 VDS - Drain Source Voltage (Volts) 1.6 ISSUE 2 – MARCH 94 FEATURES * 200 Volt VDS * RDS(on)=10Ω * Low threshold 0.8 0 0 ID(On) Drain Current (Amps) ID(On)Drain Current (Amps) 1.4 VGS= 10V 8V 6V 1.0 gfs-Transconductance (mS) ID(On) Drain Current (Amps) 1.6 ZVNL120A 50 V I D=1mA, V GS=0V 1.5 V ID=1mA, V DS= V GS I GSS 100 nA V GS=± 20V, V DS=0V Zero Gate Voltage Drain Current I DSS 10 100 µA µA V DS=200 V, V GS=0 V DS=160 V, V GS=0V, T=125°C (2) On-State Drain Current(1) I D(on) mA V DS=25 V, V GS=5V Static Drain-Source On-State Resistance (1) R DS(on) Ω Ω V GS=5V,I D=250mA V GS=3V, I D=125mA Forward Transconductance (1)(2) g fs mS V DS=25V,I D=250mA Input Capacitance (2) C iss 85 pF Common Source Output Capacitance (2) C oss 20 pF Reverse Transfer Capacitance (2) C rss 7 pF Turn-On Delay Time (2)(3) t d(on) 8 ns Rise Time (2)(3) tr 8 ns Turn-Off Delay Time (2)(3) t d(off) 20 ns Fall Time (2)(3) tf 12 ns 500 10 10 200 V DS=25 V, V GS=0V, f=1MHz V DD ≈25V, I D=250mA (1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% (2) Sample test. (3) Switching times measured with 50Ω source impedance and <5ns rise time on a pulse generator 3-401 ZVNL120A VGS-Gate Source Voltage (Volts) 16 VDS= 50V 14 ID= 700mA 12 100V 10 150V 8 6 4 2 0 0 0.4 0.8 1.2 1.6 2.0 2.4 Q-Charge (nC) RDS(on)-Drain Source On Resistance (Ω) TYPICAL CHARACTERISTICS 100 3V 4V 5V 10 10V 1 10 1000 100 ID-Drain Current (mA) Gate charge v gate-source voltage On-resistance v drain current 100 2.4 ID= 1A 0.5A 0.1A 10 1 1 10 20 Normalised RDS(on) and VGS(th) RDS(ON) -Drain Source Resistance (Ω) VGS=2V 2.2 1.8 1.6 e rc ou -S in a Dr 1.4 1.2 ce an ist s Re ) on S( RD VGS=3V ID=125mA VGS=VDS ID=1mA Gate Th reshold Voltage VGS(th) 1.0 0.8 0.6 0.4 -80 -60 -40 -20 VGS-Gate Source Voltage (Volts) On-resistance vs gate-source voltage VGS=5V ID=250mA 2.0 0 20 40 60 80 100 120 140 160 Tj-Junction Temperature (C°) Normalised RDS(on) and VGS(th) vs Temperature 3-403