ZVP3306F TYPICAL CHARACTERISTICS -4 -2 -200mA 0 -100mA V Drain Source -6 0 -2 -4 -6 -8 I - Drain Current (Amps) ID= -400mA -8 -0.8 -12V -0.6 0 f=1MHz Ciss 20 Coss 10 Crss S G V 0 0 -10 -20 -30 -40 -50 -60 1 -8 -10 Note:ID=- 0.2A 0 VDS= -20V-40V -60V -4 -6 -8 -10 -12 -14 -16 0 0.5 1.0 1.5 Q-Gate Charge (nC) Gate charge v gate-source voltage 2.6 -6V -7V -10V -15V 10 -20V 1 -100 Normalised R VGS=-5V and V 100 -1000 ID-Drain Current (mA) On-resistance vs Drain Current VGS=-10V ID=0.37A 2.0 VGS=VDS ID=-1mA 1.0 0.6 -40 -20 0 20 40 60 80 100 120 140 160 180 Junction Temperature (°C) Normalised RDS(on) and VGS(th) vs Temperature 3 - 435 ISSUE 3 JANUARY 1996 FEATURES * 60 Volt VDS * RDS(on)=14Ω D S PARTMARKING DETAIL ML COMPLEMENTARY TYPE ZVN3306F G SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Drain-Source Voltage VDS -60 V Continuous Drain Current at Tamb=25°C ID -90 mA Pulsed Drain Current IDM -1.6 A Gate Source Voltage VGS ± 20 V 330 mW -55 to +150 °C Power Dissipation at Tamb=25°C Ptot Operating and Storage Temperature Range Tj:Tstg ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). -2 -70 Capacitance v drain-source voltage RDS(on)-Drain Source On Resistance Ω -6 2 VDS-Drain Source Voltage (Volts) -10 -4 Saturation Characteristics -Gate Source Voltage (Volts) Note:VGS=0V 30 -2 VDS - Drain Source Voltage (Volts) 60 40 -7V -6V -5V -4.5V 0 Voltage Saturation Characteristics 50 -9V -8V -0.2 -10 ZVP3306F -10V -0.4 VGS-Gate Source Voltage (Volts) C-Capacitance (pF) VGS= -16V -14V -1.0 -10 SOT23 P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS. Drain-Source Breakdown Voltage BVDSS -60 Gate-Source Threshold Voltage VGS(th) -1.5 -3.5 V ID=-1mA, VGS=0V V ID=-1mA, VDS= VGS Gate-Body Leakage IGSS 20 nA VGS=± 20V, VDS=0V Zero Gate Voltage Drain Current IDSS -0.5 -50 µA µA VDS=-60 V, VGS=0V VDS=-48 V, VGS=0V, T=125°C(2) On-State Drain Current(1) ID(on) mA VDS=-18 V, VGS=-10V Static Drain-Source On-State Resistance (1) RDS(on) Ω VGS=-10V, ID=-200mA Forward Transconductance (1)(2) gfs mS VDS=-18V, ID=-200mA Input Capacitance (2) Ciss 50 pF Common Source Output Capacitance (2) Coss 25 pF Reverse Transfer Capacitance (2) Crss 8 pF Turn-On Delay Time (2)(3) td(on) 8 ns Rise Time (2)(3) tr 8 ns Turn-Off Delay Time (2)(3) td(off) 8 ns Fall Time (2)(3) tf 8 ns -400 14 60 VDS=-18V, VGS=0V, f=1MHz VDD ≈ -18V, ID=-200mA (1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% (2) Sample test. (3) Switching times measured with 50Ω source impedance and <5ns rise time on a pulse generator Spice parameter data is available upon request for this device 3 -434 ZVP3306F TYPICAL CHARACTERISTICS -4 -2 -200mA 0 -100mA V Drain Source -6 0 -2 -4 -6 -8 I - Drain Current (Amps) ID= -400mA -8 -0.8 -12V -0.6 0 f=1MHz Ciss 20 Coss 10 Crss S G V 0 0 -10 -20 -30 -40 -50 -60 1 -8 -10 Note:ID=- 0.2A 0 VDS= -20V-40V -60V -4 -6 -8 -10 -12 -14 -16 0 0.5 1.0 1.5 Q-Gate Charge (nC) Gate charge v gate-source voltage 2.6 -6V -7V -10V -15V 10 -20V 1 -100 Normalised R VGS=-5V and V 100 -1000 ID-Drain Current (mA) On-resistance vs Drain Current VGS=-10V ID=0.37A 2.0 VGS=VDS ID=-1mA 1.0 0.6 -40 -20 0 20 40 60 80 100 120 140 160 180 Junction Temperature (°C) Normalised RDS(on) and VGS(th) vs Temperature 3 - 435 ISSUE 3 JANUARY 1996 FEATURES * 60 Volt VDS * RDS(on)=14Ω D S PARTMARKING DETAIL ML COMPLEMENTARY TYPE ZVN3306F G SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Drain-Source Voltage VDS -60 V Continuous Drain Current at Tamb=25°C ID -90 mA Pulsed Drain Current IDM -1.6 A Gate Source Voltage VGS ± 20 V 330 mW -55 to +150 °C Power Dissipation at Tamb=25°C Ptot Operating and Storage Temperature Range Tj:Tstg ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). -2 -70 Capacitance v drain-source voltage RDS(on)-Drain Source On Resistance Ω -6 2 VDS-Drain Source Voltage (Volts) -10 -4 Saturation Characteristics -Gate Source Voltage (Volts) Note:VGS=0V 30 -2 VDS - Drain Source Voltage (Volts) 60 40 -7V -6V -5V -4.5V 0 Voltage Saturation Characteristics 50 -9V -8V -0.2 -10 ZVP3306F -10V -0.4 VGS-Gate Source Voltage (Volts) C-Capacitance (pF) VGS= -16V -14V -1.0 -10 SOT23 P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS. Drain-Source Breakdown Voltage BVDSS -60 Gate-Source Threshold Voltage VGS(th) -1.5 -3.5 V ID=-1mA, VGS=0V V ID=-1mA, VDS= VGS Gate-Body Leakage IGSS 20 nA VGS=± 20V, VDS=0V Zero Gate Voltage Drain Current IDSS -0.5 -50 µA µA VDS=-60 V, VGS=0V VDS=-48 V, VGS=0V, T=125°C(2) On-State Drain Current(1) ID(on) mA VDS=-18 V, VGS=-10V Static Drain-Source On-State Resistance (1) RDS(on) Ω VGS=-10V, ID=-200mA Forward Transconductance (1)(2) gfs mS VDS=-18V, ID=-200mA Input Capacitance (2) Ciss 50 pF Common Source Output Capacitance (2) Coss 25 pF Reverse Transfer Capacitance (2) Crss 8 pF Turn-On Delay Time (2)(3) td(on) 8 ns Rise Time (2)(3) tr 8 ns Turn-Off Delay Time (2)(3) td(off) 8 ns Fall Time (2)(3) tf 8 ns -400 14 60 VDS=-18V, VGS=0V, f=1MHz VDD ≈ -18V, ID=-200mA (1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% (2) Sample test. (3) Switching times measured with 50Ω source impedance and <5ns rise time on a pulse generator Spice parameter data is available upon request for this device 3 -434