ZVP4525G 250V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS=-250V; RDS(ON)=14V; ID=-265mA DESCRIPTION This 250V enhancement mode P-channel MOSFET provides users with a competitive specification offering efficient power handling capability, high impedance and is free from thermal runaway and thermally induced secondary breakdown. Applications benefiting from this device include a variety of telecom and general high voltage circuits. SOT89 and SOT23-6 versions are also available. FEATURES • High voltage SOT223 • Low on-resistance • Fast switching speed • Low gate drive • Low threshold • Complementary N-channel type ZVN4525G • SOT223 package APPLICATIONS • Earth recall and dialling switches • Electronic hook switches • High voltage power MOSFET drivers • Telecom call routers • Solid state relays ORDERING INFORMATION DEVICE REEL SIZE TAPE WIDTH QUANTITY PER REEL ZVP4525GTA 7” 8mm embossed 1000 units ZVP4525GTC 13” 8mm embossed 4000 units S D D G DEVICE MARKING • ZVP4525G TOP VIEW ISSUE 4 - JUNE 2004 1 SEMICONDUCTORS ZVP4525G ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Drain-source voltage Gate source voltage Continuous drain current (V GS =10V; TA=25°C) (a) (V GS =10V; TA=70°C) (a) LIMIT UNIT V DSS 250 V V GS ±40 V ID ID -265 -212 mA mA -1 A -0.75 A Pulsed drain current (c) I DM Continuous source current (body diode) IS Pulsed source current (body diode) I SM -1 A Power dissipation at T A =25°C (a) Linear derating factor PD 2 16 W mW/°C Operating and storage temperature range T j : T stg -55 to +150 °C THERMAL RESISTANCE PARAMETER SYMBOL Junction to ambient (a) Junction to ambient (b) VALUE UNIT R θJA 63 °C/W R θJA 26 °C/W NOTES: (a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions (b) For a device surface mounted on FR4 PCB measured at t⭐5 secs. (c) Repetitive rating - pulse width limited by maximum junction temperature. Refer to Transient Thermal Impedance graph. NB High voltage applications For high voltage applications, the appropriate industry sector guidelines should be considered with regard to voltage spacing between conductors. ISSUE 4 - JUNE 2004 SEMICONDUCTORS 2 ZVP4525G CHARACTERISTICS ISSUE 4 - JUNE 2004 3 SEMICONDUCTORS ZVP4525G ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated) PARAMETER SYMBOL MIN. TYP. Drain-source breakdown voltage V (BR)DSS -250 -285 Zero gate voltage drain current I DSS -30 Gate-body leakage I GSS MAX. UNIT CONDITIONS STATIC Gate-source threshold voltage Static drain-source on-state resistance Forward transconductance (3) DYNAMIC V GS(th) (1) -0.8 R DS(on) g fs 80 V I D =-1mA, V GS =0V -500 nA V DS =-250V, V GS =0V ±1 ±100 nA V GS =±40V, V DS =0V -1.5 -2.0 V I =-1mA, V DS = V GS D 10 13 14 18 Ω Ω V GS =-10V, I D =-200mA V GS =-3.5V, I D =-100mA 200 mS V DS =-10V,I D =-0.15A (3) Input capacitance C iss 73 pF Output capacitance C oss 12.8 pF Reverse transfer capacitance C rss 3.91 pF Turn-on delay time t d(on) 1.53 ns Rise time tr 3.78 ns Turn-off delay time t d(off) 17.5 ns Fall time tf 7.85 ns Total gate charge Qg 2.45 3.45 nC Gate-source charge Q gs 0.22 0.31 nC Gate drain charge Q gd 0.45 0.63 nC 0.97 V T j =25°C, I S =-200mA, V GS =0V T j =25°C, I F =-200mA, di/dt= 100A/µs SWITCHING V DS =-25 V, V GS =0V, f=1MHz (2) (3) V DD =-30V, I D =-200mA R G =50Ω, V GS =-10V (refer to test circuit) V DS =-25V,V GS =-10V, I D =-200mA(refer to test circuit) SOURCE-DRAIN DIODE Diode forward voltage (1) V SD Reverse recovery time (3) Reverse recovery charge (3) t rr 205 290 ns Q rr 21 29 nC NOTES: (1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤ 2%. (2) Switching characteristics are independent of operating junction temperature. (3) For design aid only, not subject to production testing. ISSUE 4 - JUNE 2004 SEMICONDUCTORS 4 ZVP4525G TYPICAL CHARACTERISTICS ISSUE 4 - JUNE 2004 5 SEMICONDUCTORS ZVP4525G CHARACTERISTICS ISSUE 4 - JUNE 2004 SEMICONDUCTORS 6 ZVP4525G TEST CIRCUITS Current Regulator Same as D.U.T 50k QG 12V 0.2µF 10V 0.3µF QGS VDS QGD IG D.U.T VG VGS ID Charge Gate Charge Test Circuit Basic Gate Charge Waveform RD VGS 10% VGS VDS RG 90% VDS -10V td(on) tr td(off) Vcc Pulse Width < 1µS Duty Factor ≤ 0.1% tf Switching Time Waveforms Switching Time Test Circuit ISSUE 4 - JUNE 2004 7 SEMICONDUCTORS ZVP4525G PAD LAYOUT DETAILS PACKAGE OUTLINE Controlling dimensions are in millimeters. Approximate conversions are given in inches PACKAGE DIMENSIONS Millimeters Inches DIM Millimeters Inches DIM Min Max Min Max Min Max A - 1.80 - 0.071 e A1 0.02 0.10 0.0008 0.004 e1 b 0.66 0.84 0.026 0.033 E 6.70 7.30 0.264 0.287 b2 2.90 3.10 0.114 0.122 E1 3.30 3.70 0.130 0.146 C 0.23 0.33 0.009 0.013 L 0.90 - 0.355 - D 6.30 6.70 0.248 0.264 - - - - - 2.30 BSC 4.60 BSC Min Max 0.0905 BSC 0.181 BSC © Zetex Semiconductors plc 2004 Europe Americas Asia Pacific Corporate Headquarters Zetex GmbH Streitfeldstraße 19 D-81673 München Germany Zetex Inc 700 Veterans Memorial Hwy Hauppauge, NY 11788 USA Zetex (Asia) Ltd 3701-04 Metroplaza Tower 1 Hing Fong Road, Kwai Fong Hong Kong Zetex plc Lansdowne Road, Chadderton Oldham, OL9 9TY United Kingdom Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 [email protected] Telephone: (1) 631 360 2222 Fax: (1) 631 360 8222 [email protected] Telephone: (852) 26100 611 Fax: (852) 24250 494 [email protected] Telephone (44) 161 622 4444 Fax: (44) 161 622 4446 [email protected] These offices are supported by agents and distributors in major countries world-wide. This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. For the latest product information, log on to www.zetex.com ISSUE 4 - JUNE 2004 SEMICONDUCTORS 8