ZX5T949G 30V PNP LOW SATURATION TRANSISTOR IN SOT223 SUMMARY BVCEO = -30V : RSAT = 31m ; IC = -5.5A DESCRIPTION Packaged in the SOT223 outline this new 5th generation low saturation 30V PNP transistor offers extremely low on state losses making it ideal for use in DC-DC circuits and various driving and power management functions. FEATURES SOT223 • 5.5 Amps continuous current • Up to 20 Amps peak current • Very low saturation voltages • Exceptional gain linearity down to 10mA APPLICATIONS • DC - DC Converters • MOSFET gate drivers • Charging circuits • Power switches • Motor control ORDERING INFORMATION DEVICE REEL SIZE TAPE WIDTH QUANTITY PER REEL ZX5T949GTA 7” 13” 12mm embossed 1,000 units ZX5T949GTC PINOUT 4,000 units DEVICE MARKING • X5T949 TOP VIEW ISSUE 1 - NOVEMBER 2003 1 SEMICONDUCTORS ZX5T949G ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL LIMIT UNIT Collector-base voltage BV CBO -50 V Collector-emitter voltage BV CEO -30 V BV EBO -7 V Emitter-base voltage (a) IC -5.5 A Peak pulse current I CM -20 A Power dissipation at T A =25°C (a) PD 3.0 W 24 mW/°C Continuous collector current Linear derating factor Power dissipation at T A =25°C (b) PD Linear derating factor Operating and storage temperature range T j , T stg 1.6 W 12.8 mW/°C -55 to 150 °C VALUE UNIT THERMAL RESISTANCE PARAMETER SYMBOL Junction to ambient (a) R ⍜JA 42 °C/W (b) R ⍜JA 78 °C/W Junction to ambient NOTES (a) For a device surface mounted on 52mm x 52mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions. (b) For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. ISSUE 1 - NOVEMBER 2003 SEMICONDUCTORS 2 ZX5T949G CHARACTERISTICS ISSUE 1 - NOVEMBER 2003 3 SEMICONDUCTORS ZX5T949G ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated) PARAMETER SYMBOL MIN. TYP. Collector-base breakdown voltage MAX. UNIT CONDITIONS BV CBO -50 -70 V I C = -100A Collector-emitter breakdown voltage BV CER -50 -70 V I C = -1A, RB < 1k⍀ Collector-emitter breakdown voltage BV CEO -30 -40 V I C = -10mA * Emitter-base breakdown voltage BV EBO -7.0 -8.0 V I E = -100A Collector cut-off current I CBO Collector cut-off current <1 <1 I CER R < 1k⍀ -20 nA V CB = -40V -0.5 A V CB = -40V, Tamb = 100°C -20 nA V CB = -40V -0.5 A VCB = -40V, Tamb = 100°C V EB = -6V Emitter cut-off current I EBO <1 -10 nA Collector-emitter saturation voltage V CE(SAT) -30 -45 mV I C = -0.5A, I B = -20mA * -40 -60 mV -60 -85 mV I C = -1A, I B = -100mA * I C = -1A, I B = -20mA * -70 -90 mV I C = -2A, I B = -200mA * -170 -210 mV I C = -5.5A, I B = -500mA * -1030 -1130 mV I C = -5.5A, IB = -500mA * -900 mV Base-emitter saturation voltage V BE(SAT) Base-emitter turn-on voltage V BE(ON) Static forward current transfer ratio h FE -1000 I C = -5.5A, V CE = -1V * 100 225 I C = -10mA, V CE = -1V * I C = -1A, V CE = -1V * 100 200 70 145 I C = -5A, V CE = -1V * 10 20 I C = -20A, V CE = -1V * I C = -100mA, V CE = -10V 300 Transition frequency fT 110 Output capacitance C OBO 83 pF t ON 43 ns t OFF 230 f = 50MHz Switching times V CB = -10V, f = 1MHz * I C = -1A, V CC = -10V, I B1 = I B2 = -100mA NOTES * Measured under pulsed conditions. Pulse width ⱕ 300s; duty cycle ⱕ2%. ISSUE 1 - NOVEMBER 2003 SEMICONDUCTORS 4 ZX5T949G TYPICAL CHARACTERISTICS ISSUE 1 - NOVEMBER 2003 5 SEMICONDUCTORS ZX5T949G PACKAGE OUTLINE PAD LAYOUT DETAILS Controlling dimensions are in millimeters. Approximate conversions are given in inches PACKAGE DIMENSIONS Millimeters Inches DIM Millimeters Inches DIM Min Max Min Max Min Max A - 1.80 - 0.071 e A1 0.02 0.10 0.0008 0.004 e1 b 0.66 0.84 0.026 0.033 E 6.70 7.30 0.264 0.287 b2 2.90 3.10 0.114 0.122 E1 3.30 3.70 0.130 0.146 C 0.23 0.33 0.009 0.013 L 0.90 - 0.355 - D 6.30 6.70 0.248 0.264 - - - - - 2.30 BSC 4.60 BSC Min Max 0.0905 BSC 0.181 BSC © Zetex plc 2003 Corporate Headquaters Europe Americas Asia Pacific Zetex plc Fields New Road Chadderton Oldham, OL9 8NP United Kingdom Telephone (44) 161 622 4444 Fax: (44) 161 622 4446 [email protected] Zetex GmbH Streitfeldstraße 19 D-81673 München Zetex Inc 700 Veterans Memorial Hwy Hauppauge, NY 11788 Germany Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 [email protected] USA Telephone: (1) 631 360 2222 Fax: (1) 631 360 8222 [email protected] Zetex (Asia) Ltd 3701-04 Metroplaza Tower 1 Hing Fong Road Kwai Fong Hong Kong Telephone: (852) 26100 611 Fax: (852) 24250 494 [email protected] These offices are supported by agents and distributors in major countries world-wide. This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. For the latest product information, log on to www.zetex.com ISSUE 1 - NOVEMBER 2003 SEMICONDUCTORS 6