ZETEX ZXTP2012Z

ZXTP2012Z
60V PNP LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89
SUMMARY
BVCEO = -60V : RSAT = 32m ; IC = -4.3A
DESCRIPTION
Packaged in the SOT89 outline this new low saturation 60V PNP transistor
offers low on state losses making it ideal for use in DC-DC circuits, line
switching and various driving and power management functions.
FEATURES
• Extremely low equivalent on-resistance; RSAT = 32mV at 5A
SOT89
• 4.3 amps continuous current
• Up to 15 amps peak current
• Very low saturation voltages
• Excellent gain characteristics specified up to 10 amps
APPLICATIONS
• Emergency lighting circuits
• Motor driving (including DC fans)
• Solenoid, relay and actuator drivers
• DC-DC modules
• Backlight inverters
• Power switches
PINOUT
• MOSFET gate drivers
ORDERING INFORMATION
DEVICE
ZXTP2012ZTA
REEL
SIZE
TAPE
WIDTH
QUANTITY PER
REEL
7”
12mm
embossed
1,000 units
TOP VIEW
DEVICE MARKING
951
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SEMICONDUCTORS
ZXTP2012Z
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
LIMIT
UNIT
Collector-base voltage
BV CBO
-100
V
Collector-emitter voltage
BV CEO
-60
V
Emitter-base voltage
Continuous collector current (a)
-7
V
IC
-4.3
A
Peak pulse current
Power dissipation at T A =25°C (a)
I CM
-15
A
PD
1.5
W
Linear derating factor
Power dissipation at T A =25°C (b)
Linear derating factor
12
mW/°C
PD
2.1
W
16.8
mW/°C
Operating and storage temperature range
T j , T stg
-55 to +150
°C
BV EBO
THERMAL RESISTANCE
PARAMETER
SYMBOL
(a)
Junction to ambient (b)
Junction to ambient
VALUE
UNIT
R ⍜JA
83
°C/W
R ⍜JA
60
°C/W
NOTES
(a) For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
(b) For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
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SEMICONDUCTORS
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ZXTP2012Z
CHARACTERISTICS
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SEMICONDUCTORS
ZXTP2012Z
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated)
PARAMETER
SYMBOL
MIN.
TYP.
Collector-base breakdown voltage
BV CBO
-100
-120
Collector-emitter breakdown voltage
BV CER
-100
-120
V
I C =-1␮A, RBⱕ1k⍀
Collector-emitter breakdown voltage
BV CEO
-60
-80
V
I C =-10mA*
Emitter-base breakdown voltage
BV EBO
-7
-8.1
Collector cut-off current
I CBO
Collector cut-off current
⬍1
⬍1
I CER
R ⱕ 1k⍀
MAX. UNIT CONDITIONS
V
I C =-100␮A
V
I E =-100␮A
-20
nA
V CB =-80V
-0.5
␮A
VCB=-80V,Tamb=100⬚C
-20
nA
V CB =-80V
-0.5
␮A
VCB=-80V,Tamb=100⬚C
Emitter cut-off current
I EBO
⬍1
-10
nA
V EB =-6V
Collector-emitter saturation voltage
V CE(SAT)
-14
-20
mV
-50
-65
mV
I C =-0.1A, I B =-10mA*
IC=-1A, IB=-100mA*
-75
-110
mV
IC=-2A, IB=-200mA*
-160
-215
mV
IC=-5A, IB=-500mA*
Base-emitter saturation voltage
V BE(SAT)
-950
-1050
mV
I C =-5A, I B =-500mA*
Base-emitter turn-on voltage
V BE(ON)
-840
-950
mV
I C =-5A, V CE =-1V*
Static forward current transfer ratio
H FE
100
250
100
200
45
90
IC=-5A, VCE=-1V*
10
25
IC=-10A, VCE=-1V*
120
I C =-10mA, V CE =-1V*
IC=-2A, VCE=-1V*
300
MHz IC =-100mA, VCE =-10V
Transition frequency
fT
Output capacitance
C OBO
48
pF
V CB =-10V, f=1MHz*
Switching times
t ON
39
ns
t OFF
370
I C =-1A, V CC =-10V,
I B1 =I B2 =-100mA
f=50MHz
* Measured under pulsed conditions. Pulse width ⱕ 300␮s; duty cycle ⱕ2%.
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SEMICONDUCTORS
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ZXTP2012Z
TYPICAL CHARACTERISTICS
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SEMICONDUCTORS
ZXTP2012Z
PACKAGE OUTLINE
PAD LAYOUT DETAILS
Controlling dimensions are in millimeters. Approximate conversions are given in inches
PACKAGE DIMENSIONS
Millimeters
Inches
DIM
Millimeters
Inches
DIM
Min
Max
Min
Max
Min
Max
Min
Max
A
1.40
1.60
0.550
0.630
e
1.40
1.50
0.055
0.059
b
0.38
0.48
0.015
0.019
E
3.75
4.25
0.150
0.167
b1
-
0.53
-
0.021
E1
-
2.60
-
0.102
b2
1.50
c
0.28
1.80
0.060
0.071
G
2.90
3.00
0.114
0.118
0.44
0.011
0.017
H
2.60
2.85
0.102
0.112
D
4.40
4.60
0.173
0.181
-
-
-
-
-
© Zetex Semiconductors plc 2005
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ISSUE 1 - JUNE 2005
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