DIODES ZXM62N02E6TA

ZXM62N02E6
20V N-CHANNEL ENHANCEMENT MODE MOSFET
SUMMARY
V(BR)DSS=20V; RDS(ON)= 0.1V; ID=3.2A
DESCRIPTION
This new generation of high density MOSFETs from Zetex utilise a unique
structure that combines the benefits of low on-resistance with fast switching
speed. This makes them ideal for high efficiency, low voltage, power
management applications.
SOT23-6
FEATURES
•
Low on-resistance
•
Fast switching speed
•
Low threshold
•
Low gate drive
•
SOT23-6 package
APPLICATIONS
•
DC - DC Converters
•
Power Management Functions
•
Disconnect switches
•
Motor control
ORDERING INFORMATION
DEVICE
REEL SIZE
(inches)
TAPE WIDTH (mm)
QUANTITY
PER REEL
Top View
ZXM62N02E6TA
7
8mm embossed
3000 units
ZXM62N02E6TC
13
8mm embossed
10000 units
DEVICE MARKING
•
2N02
ISSUE 1 - JUNE 2004
1
ZXM62N02E6
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
LIMIT
UNIT
Drain-Source Voltage
V DSS
20
V
Gate Source Voltage
V GS
± 12
V
Continuous Drain Current (V GS=4.5V; T A=25°C)(b)
(V GS=4.5V; T A=70°C)(b)
ID
3.2
2.6
A
Pulsed Drain Current (c)
I DM
18
A
Continuous Source Current (Body Diode) (b)
IS
2.1
A
Pulsed Source Current (Body Diode)
I SM
18
A
Power Dissipation at T A=25°C (a)
Linear Derating Factor
PD
1.1
8.8
W
mW/°C
Power Dissipation at T A=25°C (b)
Linear Derating Factor
PD
1.7
13.6
W
mW/°C
VALUE
UNIT
THERMAL RESISTANCE
PARAMETER
SYMBOL
Junction to Ambient (a)
R θJA
113
°C/W
Junction to Ambient (b)
R θJA
73
°C/W
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper,
in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t<5 secs.
(c) Repetitive rating - pulse width limited by maximum junction temperature. Refer to Transient Thermal
Impedance graph.
ISSUE 1 - JUNE 2004
2
ZXM62N02E6
Max Power Dissipation (Watts)
CHARACTERISTICS
100
ID - Drain Current (A)
Refer Note (a)
10
1
0.1
DC
1s
100ms
10ms
1ms
100us
0.1
10
1
100
0.5
0
0
20
40
80
60
100
120
Safe Operating Area
Derating Curve
160
140
120
Thermal Resistance (°C/W)
Thermal Resistance (°C/W)
Refer Note (b)
Refer Note (a)
1
T - Temperature (°C)
Refer Note (b)
60
20
1.5
VDS - Drain-Source Voltage (V)
80
40
2
D=0.5
D=0.2
D=0.1
D=0.05
0
0.0001
0.001
Single Pulse
0.01
0.1
1
10
Refer Note (a)
100
80
60
D=0.5
40
D=0.2
20
D=0.1
D=0.05
Single Pulse
0
0.0001 0.001 0.01
100
0.1
1
10
100
1000
Pulse Width (s)
Pulse Width (s)
Transient Thermal Impedance
Transient Thermal Impedance
ISSUE 1 - JUNE 2004
3
ZXM62N02E6
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN.
TYP.
MAX.
UNIT CONDITIONS.
STATIC
Drain-Source Breakdown Voltage
V (BR)DSS
Zero Gate Voltage Drain Current
I DSS
Gate-Body Leakage
I GSS
Gate-Source Threshold Voltage
V GS(th)
Static Drain-Source On-State Resistance (1)
R DS(on)
Forward Transconductance
g fs
20
V
I D=250µA, V GS=0V
1
µA
V DS=20V, V GS=0V
100
nA
V GS=± 12V, V DS=0V
V
I D =250µA, V DS= V GS
Ω
Ω
V GS=4.5V, I D=2.2A
V GS=2.7V, I D=1.1A
S
V DS=10V,I D=1.1A
0.7
0.1
0.125
3.2
DYNAMIC (3)
Input Capacitance
C iss
460
pF
Output Capacitance
C oss
150
pF
Reverse Transfer Capacitance
C rss
50
pF
Turn-On Delay Time
t d(on)
4.0
ns
Rise Time
tr
10.4
ns
Turn-Off Delay Time
t d(off)
16.9
ns
Fall Time
tf
8.0
ns
Total Gate Charge
Qg
6.3
nC
Gate-Source Charge
Q gs
1.5
nC
Gate Drain Charge
Q gd
2.5
nC
Diode Forward Voltage (1)
V SD
0.95
V
T j=25°C, I S=2.2A,
V GS=0V
Reverse Recovery Time (3)
t rr
17.5
ns
T j=25°C, I F=2.2A,
di/dt= 100A/µs
Reverse Recovery Charge (3)
Q rr
8.6
nC
V DS=15 V, V GS=0V,
f=1MHz
SWITCHING(2) (3)
V DD =10V, I D=2.2A
R G=6.0Ω, R D=4.4Ω
(refer to test
circuit)
V DS=16V,V GS=4.5V,
I D =2.2A (refer to
test circuit)
SOURCE-DRAIN DIODE
(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
ISSUE 1 - JUNE 2004
4
ZXM62N02E6
TYPICAL CHARACTERISTICS
100
100
+150 C
ID - Drain Current (A)
5V 4.5V 4V
VGS
3V
3.5V
10
2.5V
2V
1
0.1
1
0.1
10
ID - Drain Current (A)
10
2.5V
2V
1
1.5V
100
Output Characteristics
T=150°C
T=25°C
1
1.5
VGS -
2
2.5
3
4
3.5
1.8
1.6
1.0
VGS=VDS
ID=250uA
0.8
VGS(th)
0.6
0.4
-100
ISD - Reverse Drain Current (A)
10
0
100
50
150
200
Normalised RDS(on) and VGS(th)
v Temperature
VGS=3V
VGS=5V
1
-50
Tj - Junction Temperature (°C)
1
0.1
VGS=4.5V
ID =2.2A
1.2
Gate-Source Voltage (V)
10
0.1
RDS(on)
1.4
Typical Transfer Characteristics
RDS(on) - Drain-Source On-Resistance (Ω)
10
1
Output Characteristics
10
0.01
0.1
VDS - Drain-Source Voltage (V)
VDS=10V
1
VGS
3.5V
3V
VDS - Drain-Source Voltage (V)
100
0.1
5V 4.5V 4V
0.1
100
Normalised RDS(on) and VGS(th)
ID - Drain Current (A)
+25 C
100
100
10
1
T=150°C
T=25°C
0.1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
ID - Drain Current (A)
VSD - Source-Drain Voltage (V)
On-Resistance v Drain Current
Source-Drain Diode Forward Voltage
ISSUE 1 - JUNE 2004
5
ZXM62N02E6
TYPICAL CHARACTERISTICS
Vgs=0V
f=1Mhz
800
C - Capacitance (pF)
VGS - Gate-Source Voltage (V)
900
700
Ciss
Coss
Crss
600
500
400
300
200
100
0
0.1
1
10
100
5
ID=2.2A
4.5
4
3.5
VDS=16V
3
2.5
2
1.5
1
0.5
0
0
1
2
3
4
5
6
VDS - Drain Source Voltage (V)
Q -Charge (nC)
Capacitance v Drain-Source Voltage
Gate-Source Voltage v Gate Charge
Basic Gate Charge Waveform
Gate Charge Test Circuit
Switching Time Waveforms
Switching Time Test Circuit
ISSUE 1 - JUNE 2004
6
ZXM62N02E6
PACKAGE DIMENSIONS
b
PAD LAYOUT DETAILS
e
L 2
E1
E
DATUM A
a
e1
D
C
A
A2
DIM
A1
Millimetres
Inches
Min
Max
Min
Max
A
0.90
1.45
0.35
0.057
A1
0.00
0.15
0
0.006
A2
0.90
1.30
0.035
0.051
b
0.35
0.50
0.014
0.019
C
0.09
0.20
0.0035
0.008
D
2.80
3.00
0.110
0.118
E
2.60
3.00
0.102
0.118
E1
1.50
1.75
0.059
0.069
L
0.10
0.60
0.004
0.002
Zetex plc.
Fields New Road, Chadderton, Oldham, OL9-8NP, United Kingdom.
Telephone: (44)161 622 4422 (Sales), (44)161 622 4444 (General Enquiries)
Fax: (44)161 622 4420
Zetex GmbH
Streitfeldstraße 19
D-81673 München
Germany
Telefon: (49) 89 45 49 49 0
Fax: (49) 89 45 49 49 49
Zetex Inc.
47 Mall Drive, Unit 4
Commack NY 11725
USA
Telephone: (516) 543-7100
Fax: (516) 864-7630
Zetex (Asia) Ltd.
3510 Metroplaza, Tower 2
Hing Fong Road,
Kwai Fong, Hong Kong
Telephone:(852) 26100 611
Fax: (852) 24250 494
These are supported by
agents and distributors in
major countries world-wide
Zetex plc 1999
Internet:http://www.zetex.com
This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any
purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the
right to alter without notice the specification, design, price or conditions of supply of any product or service.
ISSUE 1 - JUNE 2004
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