ZXMD65P03N8 DUAL 30V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY (BR)DSS=-30V; RDS(ON)=0.055⍀ D=-4.8A DESCRIPTION This new generation of high density MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. SO8 FEATURES • Low on-resistance • Fast switching speed • Low threshold • Low gate drive • Low profile SOIC package APPLICATIONS • DC - DC Converters • Power Management Functions • Disconnect switches • Motor control ORDERING INFORMATION DEVICE REEL SIZE TAPE WIDTH QUANTITY PER REEL ZXMD65P03N8TA 7” 12mm 500 units ZXMD65P03N8TC 13” 12mm 2500 units Top View DEVICE MARKING • ZXMD 65P03 PROVISIONAL ISSUE A - MAY 2001 33 ZXMD65P03N8 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Drain-Source Voltage V DSS LIMIT UNIT -30 V Gate- Source Voltage V GS ±20 V Continuous Drain Current V GS =-10V; T A =25°C (b)(d) V GS =-10V; T A =70°C (b)(d) V GS =-10V; T A =25°C (a)(d) ID -4.8 -3.8 -3.8 A Pulsed Drain Current (c)(d) I DM -18 A Continuous Source Current (Body Diode)(b)(d) IS -3.0 A Pulsed Source Current (Body Diode)(c)(d) I SM -18 A Power Dissipation at T A =25°C (a)(d) Linear Derating Factor PD 1.25 10 W mW/°C Power Dissipation at T A =25°C (a)(e) Linear Derating Factor PD 1.75 14 W mW/°C Power Dissipation at T A =25°C (b)(d) Linear Derating Factor PD 2.0 16 W mW/°C THERMAL RESISTANCE PARAMETER SYMBOL VALUE UNIT Junction to Ambient (a)(d) R θJA 100 °C/W Junction to Ambient (a)(e) R θJA 71.4 °C/W Junction to Ambient (b)(d) R θJA 62.5 °C/W NOTES (a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions (b) For a device surface mounted on FR4 PCB measured at t⭐10 secs. (c) Repetitive rating 25mm x 25mm FR4 PCB, D = 0.05, pulse width 10s - pulse width limited by maximum junction temperature. (d) For device with one active die. (e) For device with two active die running at equal power. PROVISIONAL ISSUE A - MAY 2001 ZXMD65P03N8 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. TYP. MAX. UNI CONDITIONS. T STATIC Drain-Source Breakdown Voltage V (BR)DSS Zero Gate Voltage Drain Current I DSS Gate-Body Leakage I GSS Gate-Source Threshold Voltage V GS(th) Static Drain-Source On-State Resistance (1) R DS(on) Forward Transconductance (1)(3) g fs Input Capacitance -30 V I D =-250µA, V GS =0V -1 µA V DS =-24V, V GS =0V -100 nA -1.0 V GS =±12V, V DS =0V V I =-250µA, V DS = V GS Ω Ω V GS =-10V, I D =-4.9A V GS =-4.5V, I D =-3.6A 8.8 S V DS =-15V,I D =-4.9A C iss 930 pF Output Capacitance C oss 311 pF Reverse Transfer Capacitance C rss 113 pF Turn-On Delay Time t d(on) 3.8 ns Rise Time tr 6.4 ns Turn-Off Delay Time t d(off) 49.5 ns Fall Time tf 26.2 ns Gate Charge Qg 13 nC Total Gate Charge Qg 25.7 nC Gate-Source Charge Q gs 3.2 nC Gate Drain Charge Q gd 7.0 nC 0.055 0.080 D DYNAMIC (3) V DS =-25 V, V GS =0V, f=1MHz SWITCHING(2) (3) V DD =-15V, I D =-4.9A R G =6.0Ω, V GS =-10V V DS =-15V,V GS =-5V I D =-4.9A V DS =-15V,V GS =-10V I D =-4.9A SOURCE-DRAIN DIODE Diode Forward Voltage (1) V SD Reverse Recovery Time (3) t rr Reverse Recovery Charge(3) Q rr 0.95 V T j =25°C, I S =-4.9A, V GS =0V 31.5 ns T j =25°C, I F =-4.9A, di/dt= 100A/µs 63.9 nC (1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% . (2) Switching characteristics are independent of operating junction temperature. (3) For design aid only, not subject to production testing. PROVISIONAL ISSUE A - MAY 2001 ZXMD65P03N8 PACKAGE DIMENSIONS DIM Millimetres Inches Min Max Min Max A 4.80 4.98 0.189 0.196 B 1.27 BSC 0.05 BSC C 0.53 REF 0.02 REF D 0.36 0.46 0.014 0.018 E 3.81 3.99 0.15 0.157 F 1.35 1.75 0.05 0.07 G 0.10 0.25 0.004 0.010 J 5.80 6.20 0.23 0.24 K 0° 8° 0° 8° L 0.41 1.27 0.016 0.050 Zetex plc. Fields New Road, Chadderton, Oldham, OL9-8NP, United Kingdom. Telephone: (44)161 622 4422 (Sales), (44)161 622 4444 (General Enquiries) Fax: (44)161 622 4420 Zetex GmbH Streitfeldstraße 19 D-81673 München Germany Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 Zetex Inc. 47 Mall Drive, Unit 4 Commack NY 11725 USA Telephone: (631) 543-7100 Fax: (631) 864-7630 Zetex (Asia) Ltd. 3701-04 Metroplaza, Tower 1 Hing Fong Road, Kwai Fong, Hong Kong Telephone:(852) 26100 611 Fax: (852) 24250 494 These are supported by agents and distributors in major countries world-wide Zetex plc 2000 Internet:http://www.zetex.com This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. PROVISIONAL ISSUE A - MAY 2001