ZXMHC6A07T8 COMPLEMENTARY 60V ENHANCEMENT MODE MOSFET H-BRIDGE SUMMARY N-Channel V(BR)DSS = 60V; RDS(ON) = 0.300 ; ID= 1.8A P-Channel V(BR)DSS = -60V; RDS(ON) = 0.425 ; ID= -1.5A DESCRIPTION This new generation of trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. FEATURES SM8 • Low On - Resistance S1 • Fast switching speed • Low threshold S4 G1 G4 • Low gate drive • SM8 package D1, D2 D3, D4 APPLICATIONS • Motor drive G3 G2 S2 S3 ORDERING INFORMATION PINOUT DIAGRAM DEVICE REEL SIZE TAPE WIDTH QUANTITY PER REEL ZXMHC6A07T8TA 7’‘ 12mm 1000 units ZXMHC6A07T8TC 13’‘ 12mm 4000 units DEVICE MARKING • ZXMH C6A07 Top View ISSUE 1 - JULY 2004 1 SEMICONDUCTORS ZXMHC6A07T8 ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL N-Channel P-Channel UNIT Drain-Source Voltage V DSS 60 -60 V Gate-Source Voltage V GS ⫾20 ⫾20 V Continuous Drain Current@V GS =10V; T A =25⬚C (b)(d) @V GS =10V; T A =70⬚C (b)(d) @V GS =10V; T A =25⬚C (a)(d) ID 1.8 1.4 1.6 -1.5 -1.2 -1.3 A A Pulsed Drain Current (c) I DM 8.7 -7.5 A Continuous Source Current (Body Diode) (b) IS 2.3 -2.1 A Pulsed Source Current (Body Diode) (c) I SM 8.7 -7.5 A Power Dissipation at T A =25°C (a)(d) Linear Derating Factor PD 1.3 10.4 W mW/°C Power Dissipation at T A =25°C (b)(d) Linear Derating Factor PD 1.7 13.6 W mW/°C Operating and Storage Temperature Range T j :T stg -55 to +150 °C VALUE UNIT THERMAL RESISTANCE PARAMETER SYMBOL Junction to Ambient (a)(d) R θJA 96 °C/W Junction to Ambient (b)(d) R θJA 73 °C/W Notes (a) For a device surface mounted on 50mm x 50mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions. (b) For a device surface mounted on FR4 PCB measured 1.6mm at t ≤ 10sec. (c) Repetitive rating - 50mm x 50mm x 1.6mm FR4 PCB, D = 0.2, pulse width 300S pulse width limited by maximum junction temperature. Refer to Transient Thermal Impedance graph. (d) For device with one active die. ISSUE 1 - JULY 2004 SEMICONDUCTORS 2 ZXMHC6A07T8 TYPICAL CHARACTERISTICS ISSUE 1 - JULY 2004 3 SEMICONDUCTORS ZXMHC6A07T8 N-CHANNEL ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated) PARAMETER SYMBOL MIN. Drain-Source Breakdown Voltage V (BR)DSS 60 Zero Gate Voltage Drain Current I DSS Gate-Body Leakage I GSS TYP. MAX. UNIT CONDITIONS STATIC Gate-Source Threshold Voltage Static Drain-Source On-State Resistance V GS(th) (1) Forward Transconductance (1)(3) 1 R DS(on) V I D =250µA, V GS =0V 1 µA V DS =60V, V GS =0V 100 nA V GS =±20V, V DS =0V 3.0 V I =250µA, V DS = V GS D 0.300 0.450 Ω Ω V GS =10V, I D =1.8A V GS =4.5V, I D =1.3A V DS =15V,I D =1.8A g fs 2.3 S Input Capacitance C iss 166 pF Output Capacitance C oss 19.5 pF Reverse Transfer Capacitance C rss 8.7 pF Turn-On Delay Time t d(on) 1.8 ns Rise Time tr 1.4 ns Turn-Off Delay Time t d(off) 4.9 ns Fall Time tf 2.0 ns Gate Charge Qg 1.65 nC Total Gate Charge Qg 3.2 nC Gate-Source Charge Q gs 0.67 nC Gate-Drain Charge Q gd 0.82 nC V SD 0.85 t rr Q rr DYNAMIC (3) SWITCHING V DS =40V, V GS =0V, f=1MHz (2) (3) V DD =30V, I D =1.8A R G ≅6.0Ω, V GS =10V V DS =30V,V GS =5V, I D =1.8A V DS =30V,V GS =10V, I D =1.8A SOURCE-DRAIN DIODE Diode Forward Voltage (1) Reverse Recovery Time (3) Reverse Recovery Charge (3) 0.95 V T J =25°C, I S =0.45A, V GS =0V 20.5 ns T J =25°C, I F =1.8A, di/dt= 100A/µs 21.3 nC NOTES (1) Measured under pulsed conditions. Width ≤300µs. Duty cycle ≤ 2% . (2) Switching characteristics are independent of operating junction temperature. (3) For design aid only, not subject to production testing. ISSUE 1 - JULY 2004 SEMICONDUCTORS 4 ZXMHC6A07T8 P-CHANNEL ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated) PARAMETER SYMBOL MIN. Drain-Source Breakdown Voltage V (BR)DSS -60 Zero Gate Voltage Drain Current I DSS Gate-Body Leakage I GSS TYP. MAX. UNIT CONDITIONS STATIC Gate-Source Threshold Voltage Static Drain-Source On-State Resistance V GS(th) (1) Forward Transconductance (1)(3) V I D =-250µA, V GS =0V -1 A V DS =-60V, V GS =0V 100 nA V GS =±20V, V DS =0V V I =-250µA, V DS = V GS D Ω Ω V GS =-10V, I D =-0.9A V GS =-4.5V, I D =-0.8A V DS =-15V,I D =-0.9A -1.0 R DS(on) 0.425 0.630 g fs 1.8 S Input Capacitance C iss 233 pF Output Capacitance C oss 17.4 pF Reverse Transfer Capacitance C rss 9.6 pF Turn-On Delay Time t d(on) 1.6 ns Rise Time tr 2.3 ns Turn-Off Delay Time t d(off) 13 ns Fall Time tf 5.8 ns Gate Charge Qg 2.4 nC Total Gate Charge Qg 5.1 nC Gate-Source Charge Q gs 0.7 nC Gate-Drain Charge Q gd 0.7 nC V SD -0.85 t rr Q rr DYNAMIC (3) SWITCHING V DS =-30 V, V GS =0V, f=1MHz (2) (3) V DD =-30V, I D =-1A R G ≅ 6.0 Ω, V GS =-10V V DS =-30V,V GS =-5V, I D =-0.9A V DS =-30V,V GS =-10V, I D =-0.9A SOURCE-DRAIN DIODE Diode Forward Voltage (1) Reverse Recovery Time (3) Reverse Recovery Charge (3) -0.95 V T J =25°C, I S =-0.8A, V GS =0V 22.6 ns T J =25°C, I F =-0.9A, di/dt= 100A/µs 23.2 nC NOTES (1) Measured under pulsed conditions. Width ≤300µs. Duty cycle ≤ 2% . (2) Switching characteristics are independent of operating junction temperature. (3) For design aid only, not subject to production testing. ISSUE 1 - JULY 2004 5 SEMICONDUCTORS ZXMHC6A07T8 N-CHANNEL TYPICAL CHARACTERISTICS ISSUE 1 - JULY 2004 SEMICONDUCTORS 6 ZXMHC6A07T8 N-CHANNEL TYPICAL CHARACTERISTICS ISSUE 1 - JULY 2004 7 SEMICONDUCTORS ZXMHC6A07T8 P-CHANNEL TYPICAL CHARACTERISTICS ISSUE 1 - JULY 2004 SEMICONDUCTORS 8 ZXMHC6A07T8 P-CHANNEL TYPICAL CHARACTERISTICS ISSUE 1 - JULY 2004 9 SEMICONDUCTORS ZXMHC6A07T8 PACKAGE OUTLINE Controlling dimensions are in millimeters. Approximate conversions are given in inches PACKAGE DIMENSIONS Millimeters Inches Millimeters DIM Inches DIM Min Max Typ. Min Max Typ. Min Max Typ. Min Max Typ. A - 1.7 - - 0.067 - e1 - - 4.59 - - 0.1807 A1 0.02 0.1 - 0.008 0.004 - e2 - - 1.53 - - 0.0602 b - - 0.7 0.0275 He 6.7 7.3 - 0.264 0.287 - c 0.24 0.32 - 0.009 0.013 - Lp 0.9 - - 0.035 - - D 6.3 6.7 - 0.248 0.264 - ␣ - 15° - - 15° - E 3.3 3.7 - 0.130 0.145 -  - - 10° - - 10° - - © Zetex Semiconductors plc 2004 Europe Americas Asia Pacific Corporate Headquaters Zetex GmbH Streitfeldstraße 19 D-81673 München Germany Zetex Inc 700 Veterans Memorial Hwy Hauppauge, NY 11788 USA Zetex (Asia) Ltd 3701-04 Metroplaza Tower 1 Hing Fong Road, Kwai Fong Hong Kong Zetex Semiconductors plc Lansdowne Road, Chadderton Oldham, OL9 9TY United Kingdom Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 [email protected] Telephone: (1) 631 360 2222 Fax: (1) 631 360 8222 [email protected] Telephone: (852) 26100 611 Fax: (852) 24250 494 [email protected] Telephone (44) 161 622 4444 Fax: (44) 161 622 4446 [email protected] These offices are supported by agents and distributors in major countries world-wide. This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. For the latest product information, log on to www.zetex.com ISSUE 1 - JULY 2004 SEMICONDUCTORS 10