ZXMC6A09DN8 COMPLEMENTARY 60V ENHANCEMENT MODE MOSFET SUMMARY N-Channel V(BR)DSS = 60V; RDS(ON) = 0.045 ; ID= 5.1A P-Channel V(BR)DSS = -60V; RDS(ON) = 0.055 ; ID= -4.8A DESCRIPTION This new generation of trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. SO8 FEATURES • Low on-resistance • Fast switching speed • Low threshold • Low gate drive • Low profile SOIC package APPLICATIONS • Motor drive • LCD backlighting Q1 = N-CHANNEL Q2 = P-CHANNEL ORDERING INFORMATION DEVICE REEL TAPE WIDTH QUANTITY PER REEL ZXMC6A09DN8TA 7’‘ 12mm 500 units ZXMC6A09DN8TC 13’‘ 12mm 2500 units PINOUT DEVICE MARKING ZXMC 6A09 Top view ISSUE 4 - MAY 2005 1 ZXMC6A09DN8 ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current@V GS =10V; @V GS =10V; @V GS =10V; T A =25⬚C (b)(d) T A =25⬚C (b)(d) T A =25⬚C (a)(d) Pulsed Drain Current (c) Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) (b) (c) N-Channe l P-Channel UNIT V DSS 60 -60 V V GS ⫾20 ⫾20 V ID 5.1 4.1 3.9 -4.8 -3.8 -3.7 A A I DM 25 -23 A IS 3.5 -3.3 A I SM 25.4 -23.8 A (a)(d) PD 1.25 10 W mW/°C Power Dissipation at T A =25°C (a)(e) Linear Derating Factor PD 1.8 14 W mW/°C Power Dissipation at T A =25°C (b)(d) Linear Derating Factor PD 2.1 17 W mW/°C Operating and Storage Temperature Range T j :T stg -55 to +150 °C VALUE UNIT Power Dissipation at T A =25°C Linear Derating Factor THERMAL RESISTANCE PARAMETER SYMBOL Junction to Ambient (a)(d) R θJA 100 °C/W Junction to Ambient (b)(e) R θJA 69 °C/W Junction to Ambient (b)(d) R θJA 58 °C/W Notes: (a) For a dual device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper in still air conditions. (b) For a dual device surface mounted on FR4 PCB measured at t ⱕ10 sec. (c) Repetitive rating 25mm x 25mm FR4 PCB, D=0.02, pulse width=300µs - pulse width limited by maximum junction temperature. (d) For a dual device with one active die. (e) For a device with two active die running at equal power. ISSUE 4 - MAY 2005 2 ZXMC6A09DN8 CHARACTERISTICS ISSUE 4 - MAY 2005 3 ZXMC6A09DN8 N-CHANNEL ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated) PARAMETER SYMBOL MIN. Drain-Source Breakdown Voltage V (BR)DSS 60 Zero Gate Voltage Drain Current I DSS Gate-Body Leakage I GSS TYP. MAX. UNIT CONDITIONS STATIC Gate-Source Threshold Voltage Static Drain-Source On-State Resistance V GS(th) (1) Forward Transconductance (1)(3) V I D =250µA, V GS =0V 1.0 A V DS =60V, V GS =0V 100 nA V GS =⫾20V, V DS =0V V I =250A, V DS = V GS D ⍀ ⍀ V GS =10V, I D =8.2A V GS =4.5V, I D =7.4A V DS =15V,I D =8.2A 1.0 R DS(on) 0.045 0.070 g fs 15 S Input Capacitance C iss 1407 pF Output Capacitance C oss 121 pF Reverse Transfer Capacitance C rss 59 pF Turn-On Delay Time t d(on) 4.9 ns Rise Time tr 3.3 ns Turn-Off Delay Time t d(off) 28.5 ns Fall Time tf 11.0 ns Gate Charge Qg 12.4 nC Total Gate Charge Qg 24.2 nC Gate-Source Charge Q gs 5.2 nC Gate-Drain Charge Q gd 3.5 nC V SD 0.85 t rr Q rr DYNAMIC (3) SWITCHING V DS =40V, V GS =0V, f=1MHz (2) (3) V DD =30V, I D =1.0A R G 6.0Ω, V GS =10V V DS =15V,V GS =5V, I D =3.5A V DS =15V,V GS =10V, I D =3.5A SOURCE-DRAIN DIODE Diode Forward Voltage (1) Reverse Recovery Time (3) Reverse Recovery Charge (3) 0.95 V T J =25°C, I S =6.6A, V GS =0V 26.3 ns T J =25°C, I F =3.5A, di/dt= 100A/s 26.6 nC NOTES (1) Measured under pulsed conditions. Width ≤300µs. Duty cycle ≤ 2% . (2) Switching characteristics are independent of operating junction temperature. (3) For design aid only, not subject to production testing. ISSUE 4 - MAY 2005 4 ZXMC6A09DN8 P-CHANNEL ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated) PARAMETER SYMBOL MIN. Drain-Source Breakdown Voltage V (BR)DSS -60 Zero Gate Voltage Drain Current I DSS Gate-Body Leakage I GSS TYP. MAX. UNIT CONDITIONS STATIC Gate-Source Threshold Voltage Static Drain-Source On-State Resistance V GS(th) (1) Forward Transconductance (1)(3) V I D =-250µA, V GS =0V -1.0 A V DS =-60V, V GS =0V 100 nA V GS =⫾20V, V DS =0V V I =-250A, V DS = V GS D ⍀ ⍀ V GS =-10V, I D =-3.5A V GS =-4.5V, I D =-2.9A V DS =-15V,I D =-3.5A -1.0 R DS(on) 0.055 0.080 g fs 8.7 S Input Capacitance C iss 1580 pF Output Capacitance C oss 160 pF Reverse Transfer Capacitance C rss 140 pF Turn-On Delay Time t d(on) 4.6 ns Rise Time tr 5.8 ns Turn-Off Delay Time t d(off) 55 ns Fall Time tf 23 ns Gate Charge Qg 23 nC Total Gate Charge Qg 44 nC Gate-Source Charge Q gs 3.9 nC Gate-Drain Charge Q gd 9.8 nC V SD -0.85 DYNAMIC (3) SWITCHING V DS =-30 V, V GS =0V, f=1MHz (2) (3) V DD =-30V, I D =-1A R G 6.0Ω, V GS =-10V V DS =-30V,V GS =-5V, I D =-3.5A V DS =-30V,V GS =-10V, I D =-3.5A SOURCE-DRAIN DIODE Diode Forward Voltage (1) Reverse Recovery Time (3) Reverse Recovery Charge (3) -0.95 V T J =25°C, I S =-4.2A, V GS =0V T J =25°C, I F =-2.1A, di/dt= 100A/µs t rr 37 ns Q rr 56 nC NOTES (1) Measured under pulsed conditions. Width ≤300µs. Duty cycle ≤ 2% . (2) Switching characteristics are independent of operating junction temperature. (3) For design aid only, not subject to production testing. ISSUE 4 - MAY 2005 5 ZXMC6A09DN8 N-CHANNEL TYPICAL CHARACTERISTICS ISSUE 4 - MAY 2005 6 ZXMC6A09DN8 1800 1600 1400 1200 1000 800 600 400 200 0 VGS = 0V f = 1MHz VGS Gate-Source Voltage (V) C Capacitance (pF) N-CHANNEL TYPICAL CHARACTERISTICS CISS COSS CRSS 1 10 VDS - Drain - Source Voltage (V) Capacitance v Drain-Source Voltage 10 ID = 3.5A 8 6 VDS = 15V 4 2 0 0 5 10 15 Q - Charge (nC) 20 25 Gate-Source Voltage v Gate Charge ISSUE 4 - MAY 2005 7 ZXMC6A09DN8 P-CHANNEL TYPICAL CHARACTERISTICS ISSUE 4 - MAY 2005 8 ZXMC6A09DN8 P-CHANNEL TYPICAL CHARACTERISTICS ISSUE 4 - MAY 2005 9 ZXMC6A09DN8 PACKAGE OUTLINE CONTROLLING DIMENSIONS ARE IN INCHES APPROX IN MILLIMETERS PACKAGE DIMENSIONS Millimeters Inches DIM Millimeters Inches DIM Min Max Min Max Min Max A 1.35 1.75 0.053 0.069 e A1 0.10 0.25 0.004 0.010 b 0.33 0.51 0.013 0.020 D 4.80 5.00 0.189 0.197 c 0.19 0.25 0.008 0.010 H 5.80 6.20 0.228 0.244 ⍜ 0° 8° 0° 8° E 3.80 4.00 0.150 0.157 h 0.25 0.50 0.010 0.020 L 0.40 1.27 0.016 0.050 - - - - - 1.27 BSC Min Max 0.050 BSC © Zetex Semiconductors plc 2005 Europe Americas Asia Pacific Corporate Headquarters Zetex GmbH Streitfeldstraße 19 D-81673 München Germany Zetex Inc 700 Veterans Memorial Hwy Hauppauge, NY 11788 USA Zetex (Asia) Ltd 3701-04 Metroplaza Tower 1 Hing Fong Road, Kwai Fong Hong Kong Zetex Semiconductors plc Zetex Technology Park Chadderton, Oldham, OL9 9LL United Kingdom Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 [email protected] Telephone: (1) 631 360 2222 Fax: (1) 631 360 8222 [email protected] Telephone: (852) 26100 611 Fax: (852) 24250 494 [email protected] Telephone (44) 161 622 4444 Fax: (44) 161 622 4446 [email protected] These offices are supported by agents and distributors in major countries world-wide. This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. For the latest product information, log on to www.zetex.com ISSUE 4 - MAY 2005 10