A Product Line of Diodes Incorporated ADVANCE INFORMATION ZXMN10A11G 100V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS Features and Benefits ID RDS(on) TA = 25°C 350mΩ @ VGS = 10V 2.4A 450mΩ @ VGS = 6.0V 2.1A 100V • Fast switching speed • Low gate drive • Low input capacitance • Qualified to AEC-Q101 Standards for High Reliability Mechanical Data Description and Applications This MOSFET has been designed to minimize the on-state resistance and yet maintain superior switching performance, making it ideal for high efficiency power management applications. • Motor control • DC-DC Converters • Power management functions • Uninterrupted power supply • Case: SOT223 • Case Material: Molded Plastic, UL Flammability Classification Rating 94V-0 • Moisture Sensitivity: Level 1 per J-STD-020 • Terminals: Finish - Matte Tin annealed over Copper lead frame. Solderable per MIL-STD-202, Method 208 • Weight: 0.112 grams (approximate) SOT223 D G S Pin Out - Top View Top View Equivalent Circuit Ordering Information Product ZXMN10A11GTA Marking See below Reel size (inches) 7 Tape width (mm) 12 Quantity per reel 1,000 Marking Information ZXMN 10A11 ZXMN10A11G Document Number DS32056 Rev. 6 - 2 ZXMN = Product Type Marking Code, Line 1 10A11 = Product Type Marking Code, Line 2 1 of 8 www.diodes.com January 2010 © Diodes Incorporated A Product Line of Diodes Incorporated ADVANCE INFORMATION ZXMN10A11G Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Symbol VDSS VGS Drain-Source voltage Gate-Source voltage Continuous Drain current VGS = 10V Pulsed Drain current VGS= 10V Continuous Source current (Body diode) Pulsed Source current (Body diode) (Note 2) TA = 70°C (Note 2) (Note 1) (Note 3) (Note 2) (Note3 ) ID IDM IS ISM Value 100 ±20 2.4 1.9 1.7 7.9 4.6 7.9 Unit V V Value 2.0 16 3.9 31 62.5 32.0 9.8 -55 to 150 Unit A A A A Thermal Characteristics @TA = 25°C unless otherwise specified Characteristic Power dissipation Linear derating factor Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Lead Operating and storage temperature range Notes: Symbol (Note 1) PD (Note 2) (Note 1) (Note 2) (Note 4) RθJA RθJL TJ, TSTG W mW/°C °C/W °C/W °C 1. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is measured when operating in a steady-state condition. 2. Same as note (1), except the device is measured at t ≤ 10 sec. 3. Same as note (1), except the device is pulsed with D = 0.02 and pulse width 300µs. The pulse current is limited by the maximum junction temperature. 4. Thermal resistance from junction to solder-point (at the end of the drain lead) ZXMN10A11G Document Number DS32056 Rev. 6 - 2 2 of 8 www.diodes.com January 2010 © Diodes Incorporated A Product Line of Diodes Incorporated Thermal Characteristics Max Power Dissipation (W) ID Drain Current (A) 10 RDS(on) Limited 1 DC 100m 1s 100ms 10ms 10m 1ms Single Pulse T amb=25°C 1 100µs 10 100 2.0 1.6 1.2 0.8 0.4 0.0 VDS Drain-Source Voltage (V) 0 20 40 60 80 100 120 140 160 Temperature (°C) Derating Curve Safe Operating Area 70 Tamb=25°C 60 Maximum Power (W) Thermal Resistance (°C/W) ADVANCE INFORMATION ZXMN10A11G 50 40 D=0.5 30 20 Single Pulse D=0.2 D=0.05 10 0 100µ D=0.1 1m 10m 100m 1 10 100 1k 100 10 1 100µ Pulse Width (s) Document Number DS32056 Rev. 6 - 2 1m 10m 100m 1 10 100 1k Pulse Width (s) Transient Thermal Impedance ZXMN10A11G Single Pulse T amb=25°C Pulse Power Dissipation 3 of 8 www.diodes.com January 2010 © Diodes Incorporated A Product Line of Diodes Incorporated ADVANCE INFORMATION ZXMN10A11G Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic OFF CHARACTERISTICS Symbol Min Typ Max Drain-Source Breakdown Voltage BVDSS Zero Gate Voltage Drain Current IDSS Gate-Source Leakage Unit Test Condition 100 ⎯ ⎯ V ID = 250μA, VGS = 0V ⎯ ⎯ 1 μA VDS = 100V, VGS = 0V IGSS ⎯ ⎯ ±100 nA VGS = ±20V, VDS = 0V VGS(th) 2.0 ⎯ 4.0 V ID = 250μA, VDS = VGS ON CHARACTERISTICS Gate Threshold Voltage VGS = 10V, ID = 2.6A RDS (ON) ⎯ Forward Transconductance (Notes 5 & 6) gfs ⎯ 4 ⎯ S VDS = 15V, ID = 2.6A Diode Forward Voltage (Note 5) VSD ⎯ 0.85 0.95 V IS = 1.85A, VGS = 0V Reverse recovery time (Note 6) trr 26 ⎯ ns Reverse recovery charge (Note 6) Qrr ⎯ 30 ⎯ nC Input Capacitance Ciss ⎯ 274 ⎯ pF Output Capacitance Coss ⎯ 21 ⎯ pF Reverse Transfer Capacitance Crss ⎯ 11 ⎯ pF Total Gate Charge (Note 7) Qg ⎯ 3.5 ⎯ nC Total Gate Charge (Note 7) Qg ⎯ 5.4 ⎯ nC Gate-Source Charge (Note 7) Qgs ⎯ 1.4 ⎯ nC Gate-Drain Charge (Note 7) Qgd ⎯ 1.5 ⎯ nC Turn-On Delay Time (Note 7) tD(on) ⎯ 2.7 ⎯ ns Turn-On Rise Time (Note 7) tr ⎯ 1.7 ⎯ ns Turn-Off Delay Time (Note 7) tD(off) ⎯ 7.4 ⎯ ns tf ⎯ 3.5 ⎯ ns Static Drain-Source On-Resistance (Note 5) ⎯ 0.35 0.45 Ω VGS = 6V, ID = 1.3A IF = 1.0A, di/dt = 100A/μs DYNAMIC CHARACTERISTICS (Note 6) Turn-Off Fall Time (Note 7) Notes: VDS = 50V, VGS = 0V f = 1MHz VGS = 6.0V VGS = 10V VDS = 50V ID = 2.5A VDD = 50V, VGS = 10V ID = 1A, RG ≅ 6.0Ω 5. Measured under pulsed conditions. Pulse width ≤ 300μs; duty cycle ≤ 2% 6. For design aid only, not subject to production testing. 7. Switching characteristics are independent of operating junction temperatures. ZXMN10A11G Document Number DS32056 Rev. 6 - 2 4 of 8 www.diodes.com January 2010 © Diodes Incorporated A Product Line of Diodes Incorporated Typical Characteristics 10 10 10V ID Drain Current (A) 5V 4.5V 1 4V VGS 0.1 3.5V 0.01 5V 4.5V 1 4V 3.5V 0.1 3V VGS 2.5V 0.01 0.1 1 1 10 0.1 10 VDS Drain-Source Voltage (V) Output Characteristics Output Characteristics T = 150°C T = 25°C VDS = 10V 0.1 3 4 5 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 -50 VGS Gate-Source Voltage (V) VGS = 10V ID = 2.6A RDS(on) VGS(th) VGS = VDS ID = 250uA 0 50 100 150 Tj Junction Temperature (°C) Typical Transfer Characteristics Normalised Curves v Temperature 10 100 4V VGS 4.5V 10 5V 1 10V T = 25°C 0.1 1 ISD Reverse Drain Current (A) 3.5V 0.1 0.01 1 VDS Drain-Source Voltage (V) Normalised RDS(on) and VGS(th) ID Drain Current (A) 10V T = 150°C ID Drain Current (A) T = 25°C RDS(on) Drain-Source On-Resistance (Ω) ADVANCE INFORMATION ZXMN10A11G T = 150°C 1 T = 25°C 0.1 0.01 10 On-Resistance v Drain Current ZXMN10A11G Document Number DS32056 Rev. 6 - 2 0.4 0.6 0.8 1.0 VSD Source-Drain Voltage (V) ID Drain Current (A) Source-Drain Diode Forward Voltage 5 of 8 www.diodes.com January 2010 © Diodes Incorporated A Product Line of Diodes Incorporated ZXMN10A11G ADVANCE INFORMATION Typical Characteristics - continued Test Circuits Current regulator QG 50k 12V VG Q GS Same as D.U.T Q GD V DS IG D.U.T ID V GS Charge Basic gate charge waveform Gate charge test circuit V DS 90% RD V GS V DS RG VDD 10% V GS td(on) tr t(on) td(off) tr t(on) Switching time waveforms ZXMN10A11G Document Number DS32056 Rev. 6 - 2 Switching time test circuit 6 of 8 www.diodes.com January 2010 © Diodes Incorporated A Product Line of Diodes Incorporated ADVANCE INFORMATION ZXMN10A11G Package Outline Dimensions DIM A A1 A2 b b2 C Millimeters Min Max 1.80 0.02 0.10 1.55 1.65 0.66 0.84 2.90 3.10 0.23 0.33 Inches Min Max 0.071 0.0008 0.004 0.0610 0.0649 0.026 0.033 0.114 0.122 0.009 0.013 DIM D e e1 E E1 L Millimeters Min Max 6.30 6.70 2.30 BSC 4.60 BSC 6.70 7.30 3.30 3.70 0.90 - Inches Min Max 0.248 0.264 0.0905 BSC 0.181 BSC 0.264 0.287 0.130 0.146 0.355 - Suggested Pad Layout 3.8 0.15 2.0 0.079 6.3 0.248 2.0 0.079 1.5 0.059 ZXMN10A11G Document Number DS32056 Rev. 6 - 2 2.3 0.091 7 of 8 www.diodes.com mm inches January 2010 © Diodes Incorporated A Product Line of Diodes Incorporated ADVANCE INFORMATION ZXMN10A11G IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 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