A Product Line of Diodes Incorporated ZXMP10A17E6 100V P-CHANNEL ENHANCEMENT MODE MOSFET ADVANCE INFORMATION Please click here to visit our online spice models database. Product Summary V(BR)DSS Features and Benefits ID RDS(on) TA = 25°C 350mΩ @ VGS= -10V -1.6 450mΩ @ VGS= -6.0V -1.4 -100V • Fast switching speed • Low gate drive • Low input capacitance • Qualified to AEC-Q101 Standards for High Reliability Mechanical Data Description and Applications This MOSFET has been designed to minimize the on-state resistance and yet maintain superior switching performance, making it ideal for high efficiency power management applications. • Motor control • DC-DC Converters • Power management functions • Uninterrupted power supply • Case: SOT23-6 • Case Material: Molded Plastic, UL Flammability Classification Rating 94V-0 • Moisture Sensitivity: Level 1 per J-STD-020 • Terminals: Finish - Matte Tin annealed over Copper lead frame. Solderable per MIL-STD-202, Method 208 • Weight: 0.018 grams (approximate) SOT23-6 D D D D G S Pin Out - Top View Top View D G S Equivalent Circuit Ordering Information Product ZXMP10A17E6TA Marking See below Reel size (inches) 7 Tape width (mm) 8 Quantity per reel 3,000 Marking Information 1A17 ZXMP10A17E6 Document Number DS32027 Rev. 3 - 2 1A17 = Product Type Marking Code 1 of 8 www.diodes.com December 2009 © Diodes Incorporated A Product Line of Diodes Incorporated ADVANCE INFORMATION ZXMP10A17E6 Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Symbol VDSS VGS Drain-Source voltage Gate-Source voltage Continuous Drain current VGS = 10V Pulsed Drain current VGS= 10V Continuous Source current (Body diode) Pulsed Source current (Body diode) (Note 2) TA = 70°C (Note 2) (Note 1) (Note 3) (Note 2) (Note3 ) ID IDM IS ISM Value -100 ±20 -1.6 -1.3 -1.3 -7.7 -2.1 -7.7 Unit V V Value 1.1 8.8 1.7 13.7 113 73 -55 to 150 Unit A A A A Thermal Characteristics @TA = 25°C unless otherwise specified Characteristic Power dissipation Linear derating factor Thermal Resistance, Junction to Ambient Operating and storage temperature range Notes: Symbol (Note 1) PD (Note 2) (Note 1) (Note 2) RθJA TJ, TSTG W mW/°C °C/W °C 1. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is measured when operating in a steady-state condition. 2. Same as note (1), except the device is measured at t ≤ 5 sec. 3. Same as note (1), except the device is pulsed with D= 0.02 and pulse width 300 µs. The pulse current is limited by the maximum junction temperature. ZXMP10A17E6 Document Number DS32027 Rev. 3 - 2 2 of 8 www.diodes.com December 2009 © Diodes Incorporated A Product Line of Diodes Incorporated -ID Drain Current (A) 10 R DS(on) Limited 1 DC 1s 100m 100m s 10ms 10m 1ms Single Pulse T amb=25°C 100us 1 10 100 Max Power Dissipation (W) Thermal Characteristics 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0 25 -VDS Drain-Source Voltage (V) 50 75 100 Maximum Power (W) T amb=25°C 80 D=0.5 60 Single Pulse D=0.2 D=0.05 20 D=0.1 0 100µ 1m 10m 100m 1 10 100 10 1k 1 100µ 1m 10m 100m 1 10 100 1k Pulse Width (s) Transient Thermal Impedance Document Number DS32027 Rev. 3 - 2 Single Pulse Tamb=25°C 100 Pulse Width (s) ZXMP10A17E6 150 Derating Curve 100 40 125 Temperature (°C) Safe Operating Area Thermal Resistance (°C/W) ADVANCE INFORMATION ZXMP10A17E6 3 of 8 www.diodes.com Pulse Power Dissipation December 2009 © Diodes Incorporated A Product Line of Diodes Incorporated ADVANCE INFORMATION ZXMP10A17E6 Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic OFF CHARACTERISTICS Symbol Min Typ Max Unit Test Condition Drain-Source Breakdown Voltage BVDSS -100 ⎯ ⎯ V ID = -250μA, VGS= 0V Zero Gate Voltage Drain Current IDSS ⎯ ⎯ -0.5 μA VDS= -100V, VGS= 0V Gate-Source Leakage IGSS ⎯ ⎯ ±100 nA VGS= ±20V, VDS= 0V VGS(th) -2.0 ⎯ -4.0 V ID= -250μA, VDS= VGS ON CHARACTERISTICS Gate Threshold Voltage 0.350 RDS (ON) ⎯ ⎯ Forward Transconductance (Notes 4 & 5) gfs ⎯ 2.8 ⎯ Diode Forward Voltage (Note 4) VSD ⎯ -0.85 Reverse recovery time (Note 5) trr 33 Reverse recovery charge (Note 5) Qrr ⎯ Input Capacitance Ciss Output Capacitance Static Drain-Source On-Resistance (Note 4) 0.450 Ω VGS= -10V, ID= -1.4A VGS= -6V, ID= -1.2A S VDS= -15V, ID= -1.4A -0.95 V IS= -1.7A, VGS= 0V ⎯ ns 48 ⎯ nC ⎯ 424 ⎯ pF Coss ⎯ 36.6 ⎯ pF Reverse Transfer Capacitance Crss ⎯ 29.8 ⎯ pF Total Gate Charge (Note 6) Qg ⎯ 7.1 ⎯ nC IS= -1.5A, di/dt= 100A/μs DYNAMIC CHARACTERISTICS (Note 5) Total Gate Charge (Note 6) Qg ⎯ 10.7 ⎯ nC Gate-Source Charge (Note 6) Qgs ⎯ 1.7 ⎯ nC Gate-Drain Charge (Note 6) Qgd ⎯ 3.8 ⎯ nC Turn-On Delay Time (Note 6) tD(on) ⎯ 3.0 ⎯ ns Turn-On Rise Time (Note 6) tr ⎯ 3.5 ⎯ ns Turn-Off Delay Time (Note 6) tD(off) ⎯ 13.4 ⎯ ns tf ⎯ 7.2 ⎯ ns Turn-Off Fall Time (Note 6) Notes: VDS= -50V, VGS= 0V f= 1MHz VGS= -6.0V VGS= -10V VDS= -50V ID= -1.4A VDD= -50V, VGS= -10V ID= -1A, RG ≅ 6.0Ω 4. Measured under pulsed conditions. Pulse width ≤ 300μs; duty cycle ≤ 2% 5. For design aid only, not subject to production testing. 6. Switching characteristics are independent of operating junction temperatures. ZXMP10A17E6 Document Number DS32027 Rev. 3 - 2 4 of 8 www.diodes.com December 2009 © Diodes Incorporated A Product Line of Diodes Incorporated ZXMP10A17E6 10V T = 25°C 7V 10 -ID Drain Current (A) -ID Drain Current (A) 10 5V 1 4.5V 4V 0.1 10V T = 150°C 7V 5V 4.5V 4V 1 3.5V 0.1 0.01 -VGS 0.01 3V -VGS 1E-3 0.1 1 10 0.1 1 10 -VDS Drain-Source Voltage (V) -VDS Drain-Source Voltage (V) Output Characteristics Output Characteristics T = 150°C T = 25°C 0.1 -VDS = 10V 0.01 3 4 5 VGS = -10V 1.8 ID = - 1.4A 1.6 RDS(on) 1.4 1.2 1.0 VGS(th) 0.8 VGS = VDS 0.6 ID = -250uA -50 0 50 100 -VGS Gate-Source Voltage (V) Tj Junction Temperature (°C) Typical Transfer Characteristics Normalised Curves v Temperature 100 -VGS 4V T = 25°C 4.5V 10 5V 1 7V 10V 0.01 0.1 1 10 -ID Drain Current (A) On-Resistance v Drain Current ZXMP10A17E6 Document Number DS32027 Rev. 3 - 2 -ISD Reverse Drain Current (A) -ID Drain Current (A) 1 Normalised RDS(on) and VGS(th) 2.0 RDS(on) Drain-Source On-Resistance (Ω) ADVANCE INFORMATION Typical Characteristics 150 10 T = 150°C 1 T = 25°C 0.1 0.01 0.2 0.4 0.6 0.8 1.0 1.2 -VSD Source-Drain Voltage (V) Source-Drain Diode Forward Voltage 5 of 8 www.diodes.com December 2009 © Diodes Incorporated A Product Line of Diodes Incorporated ZXMP10A17E6 VGS = 0V f = 1MHz 500 CISS 400 300 COSS 200 100 CRSS 0 0.1 1 10 100 -VDS - Drain - Source Voltage (V) Capacitance v Drain-Source Voltage -VGS Gate-Source Voltage (V) 10 600 C Capacitance (pF) ADVANCE INFORMATION Typical Characteristics - continued 8 6 4 VDS = -50V 2 ID = -1.4A 0 0 2 4 6 8 10 Q - Charge (nC) Gate-Source Voltage v Gate Charge Test Circuits Current regulator QG 12V VG QGS 50k 0.2F Same as D.U.T QGD VDS IG D.U.T ID VGS Charge Basic gate charge waveform Gate charge test circuit VDS 90% RD VGS VDS RG VDD 10% VGS tr td(of ) t(on) tr t(on) Switching time waveforms ZXMP10A17E6 Document Number DS32027 Rev. 3 - 2 Pulse width ⬍ 1S Duty factor 0.1% td(on) Switching time test circuit 6 of 8 www.diodes.com December 2009 © Diodes Incorporated A Product Line of Diodes Incorporated ADVANCE INFORMATION ZXMP10A17E6 Package Outline Dimensions DIM A A1 A2 b C D E E1 L e e1 θ Millimeters Min 0.90 0.00 0.90 0.20 0.09 2.70 2.20 1.30 0.10 Inches Max 1.45 0.15 1.30 0.50 0.26 3.10 3.20 1.80 0.60 Min 0.354 0.00 0.0354 0.0078 0.0035 0.1062 0.0866 0.0511 0.0039 0.95 REF 1.90 REF 0° Max 0.0570 0.0059 0.0511 0.0196 0.0102 0.1220 0.1181 0.0708 0.0236 0.0374 REF 0.0748 REF 30° 0° 30° Suggested Pad Layout 0.95 0.037 1.06 0.042 2.2 0.087 0.65 0.026 ZXMP10A17E6 Document Number DS32027 Rev. 3 - 2 7 of 8 www.diodes.com mm inches December 2009 © Diodes Incorporated A Product Line of Diodes Incorporated ADVANCE INFORMATION ZXMP10A17E6 IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 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