ZXMP3A17DN8 DUAL P-CHANNEL 30V ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS = -30V; RDS(ON) = 0.070 ; ID= -4.4A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. FEATURES • Low on-resistance SO8 • Fast switching speed • Low threshold • Low gate drive • Low profile SOIC package APPLICATIONS • Motor Drive • LCD backlighting ORDERING INFORMATION DEVICE REEL TAPE WIDTH QUANTITY PER REEL ZXMP3A17DN8TA 7’‘ 12mm 500 units ZXMP3A17DN8TC 13’‘ 12mm 2500 units PINOUT DEVICE MARKING ZXMP 3A17D Top view ISSUE 1 - OCTOBER 2005 1 ZXMP3A17DN8 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DSS -30 V Gate-Source Voltage V GS ⫾20 V Continuous Drain Current@V GS =10V; T A =25⬚C (b)(d) @V GS =10V; T A =70⬚C (b)(d) @V GS =10V; T A =25⬚C (a)(d) ID -4.4 -3.6 -3.4 A A A Pulsed Drain Current (c) I DM -16.2 A Continuous Source Current (Body Diode)(b) IS -2.5 A Pulsed Source Current (Body Diode)(c) I SM -16.2 A Power Dissipation at TA=25°C (a)(d) Linear Derating Factor PD 1.25 10 W mW/°C Power Dissipation at TA=25°C (a)(e) Linear Derating Factor PD 1.8 14 W mW/°C Power Dissipation at TA=25°C (b)(d) Linear Derating Factor PD 2.1 17 W mW/°C Operating and Storage Temperature Range T j :T stg -55 to +150 °C VALUE UNIT THERMAL RESISTANCE PARAMETER SYMBOL Junction to Ambient (a)(d) R θJA 100 °C/W Junction to Ambient (b)(e) R θJA 70 °C/W Junction to Ambient (b)(d) R θJA 60 °C/W Notes (a) For a dual device surface mounted on 25mm x 25mm FR4 PCB with coverage of single sided 1oz copper in still air conditions. (b) For a dual device surface mounted on FR4 PCB measured at t ⱕ10 sec. (c) Repetitive rating 25mm x 25mm FR4 PCB, D=0.05 pulse width=10µs - pulse width limited by maximum junction temperature. (d) For a dual device with one active die. (e) For dual device with 2 active die running at equal power. ISSUE 1 - OCTOBER 2005 2 ZXMP3A17DN8 RDS(on) 10 Limited 1 DC 1s 100m 10m Max Power Dissipation (W) -ID Drain Current (A) CHARACTERISTICS 100ms 10ms Single Pulse Tamb=25°C One active die 100m 1ms 100µs 1 10 -VDS Drain-Source Voltage (V) 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0 Two active die One active die 20 60 80 100 120 140 160 Temperature (°C) Safe Operating Area Derating Curve 110 Tamb=25°C 100 90 One active die 80 70 60 D=0.5 50 40 Single Pulse 30 D=0.2 20 D=0.05 10 D=0.1 0 100µ 1m 10m 100m 1 10 100 1k MaximumPower (W) Thermal Resistance (°C/W) 40 Single Pulse Tamb=25°C One active die 100 10 1 100µ 1m 10m 100m 1 10 100 Pulse Width (s) Pulse Width (s) Transient Thermal Impedance Pulse Power Dissipation ISSUE 1 - OCTOBER 2005 3 1k ZXMP3A17DN8 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. -30 TYP. MAX. UNIT CONDITIONS. STATIC Drain-Source Breakdown Voltage V (BR)DSS Zero Gate Voltage Drain Current I DSS Gate-Body Leakage I GSS Gate-Source Threshold Voltage V GS(th) I D =-250µA, V GS =0V A V DS =-30V, V GS =0V 100 nA V GS =⫾20V, V DS =0V V ⍀ ⍀ I =-250A, V DS = V GS D V GS =-10V, I D =-3.2A V GS =-4.5V, I D =-2.5A V DS =-15V,I D =-3.2A -1.0 Static Drain-Source On-State Resistance R DS(on) (1) Forward Transconductance (1)(3) V -1.0 0.070 0.110 g fs 6.4 S Input Capacitance C iss 630 pF Output Capacitance C oss 113 pF Reverse Transfer Capacitance C rss 78 pF DYNAMIC (3) V DS =-15 V, V GS =0V, f=1MHz SWITCHING(2) (3) Turn-On Delay Time t d(on) 1.74 ns Rise Time tr 2.87 ns Turn-Off Delay Time t d(off) 29.2 ns Fall Time tf 8.72 ns Gate Charge Qg 8.28 nC Total Gate Charge Qg 15.8 nC Gate-Source Charge Q gs 1.84 nC Gate-Drain Charge Q gd 2.80 nC Diode Forward Voltage (1) V SD -0.85 Reverse Recovery Time (3) t rr Reverse Recovery Charge (3) Q rr V DD =-15V, I D =-1A R G =6.0Ω, V GS =-10V V DS =-15V,V GS =-5V, I D =-3.2A V DS =-15V,V GS =-10V, I D =-3.2A SOURCE-DRAIN DIODE -1.2 V T J =25°C, I S =-2.5A, V GS =0V 19.5 ns 16.3 nC T J =25°C, I F =-1.7A, di/dt= 100A/µs NOTES (1) Measured under pulsed conditions. Width ≤300µs. Duty cycle ≤ 2% . (2) Switching characteristics are independent of operating junction temperature. (3) For design aid only, not subject to production testing. ISSUE 1 - OCTOBER 2005 4 ZXMP3A17DN8 TYPICAL CHARACTERISTICS 10V 4V -ID Drain Current (A) 3.5V 3V 2.5V 1 -VGS 2V 0.1 0.01 0.1 10V T = 150°C 5V -ID Drain Current (A) T = 25°C 10 1 4V 3.5V 3V 2.5V 1 2V -VGS 0.1 1.5V 0.01 10 5V 10 0.1 -VDS Drain-Source Voltage (V) 1 10 -VDS Drain-Source Voltage (V) Output Characteristics Output Characteristics 1.4 1 T = 25°C -VDS = 10V 0.1 1 RDS(on) Drain-Source On-Resistance (Ω) Normalised RDS(on) and VGS(th) T = 150°C 2 3 VGS = -10V ID = -3.2A 1.2 RDS(on) 1.0 VGS(th) 0.8 VGS = VDS ID = -250uA 0.6 -50 4 0 50 100 150 -VGS Gate-Source Voltage (V) Tj Junction Temperature (°C) Typical Transfer Characteristics Normalised Curves v Temperature 2V T = 25°C -ISD Reverse Drain Current (A) -ID Drain Current (A) 10 -VGS 10 2.5V 3V 3.5V 1 4V 5V 10V 0.1 0.1 1 10 T = 150°C 1 T = 25°C 0.1 0.01 0.2 10 -ID Drain Current (A) On-Resistance v Drain Current 0.4 0.6 0.8 1.0 -VSD Source-Drain Voltage (V) 1.2 Source-Drain Diode Forward Voltage ISSUE 1 - OCTOBER 2005 5 ZXMP3A17DN8 TYPICAL CHARACTERISTICS 10 VGS = 0V f = 1MHz 800 600 -VGS Gate-Source Voltage (V) C Capacitance (pF) 1000 CISS COSS 400 CRSS 200 0 0.1 1 10 -VDS - Drain - Source Voltage (V) Capacitance v Drain-Source Voltage ID = -3.2A 8 6 4 2 VDS = -15V 0 0 5 10 15 20 Q - Charge (nC) Gate-Source Voltage v Gate Charge ISSUE 1 - OCTOBER 2005 6 ZXMP3A17DN8 PACKAGE OUTLINE PACKAGE DIMENSIONS INCHES ⍜ L H E Pin 1 c A A1 e MIN MAX MIN MAX A 0.053 0.069 1.35 1.75 A1 0.004 0.010 0.10 0.25 D 0.189 0.197 4.80 5.00 H 0.228 0.244 5.80 6.20 E 0.150 0.157 3.80 4.00 L 0.016 0.050 0.40 1.27 e Seating Plane b MILLIMETRES DIM D CONTROLLING DIMENSIONS ARE IN INCHES APPROX IN MILLIMETRES 0.050 BSC 1.27 BSC b 0.013 0.020 0.33 0.51 c 0.008 0.010 0.19 0.25 ⍜ 0⬚ 8⬚ 0⬚ 8⬚ h 0.010 0.020 0.25 0.50 © Zetex Semiconductors plc 2005 Europe Americas Asia Pacific Corporate Headquarters Zetex GmbH Streitfeldstraße 19 D-81673 München Germany Zetex Inc 700 Veterans Memorial Hwy Hauppauge, NY 11788 USA Zetex (Asia) Ltd 3701-04 Metroplaza Tower 1 Hing Fong Road, Kwai Fong Hong Kong Zetex Semiconductors plc Zetex Technology Park Chadderton, Oldham, OL9 9LL United Kingdom Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 [email protected] Telephone: (1) 631 360 2222 Fax: (1) 631 360 8222 [email protected] Telephone: (852) 26100 611 Fax: (852) 24250 494 [email protected] Telephone (44) 161 622 4444 Fax: (44) 161 622 4446 [email protected] These offices are supported by agents and distributors in major countries world-wide. This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. For the latest product information, log on to www.zetex.com ISSUE 1 - OCTOBER 2005 7