ZETEX ZXMP3A13F

ZXMP3A13F
30V P-CHANNEL ENHANCEMENT MODE MOSFET
SUMMARY
V(BR)DSS = -30V; RDS(ON) = 0.21
ID = -1.6A
DESCRIPTION
This new generation of trench MOSFETs from Zetex utilizes a unique structure that
combines the benefits of low on-resistance with fast switching speed. This makes
them ideal for high efficiency, low voltage, power management applications.
SOT23
FEATURES
• Low on-resistance
• Fast switching speed
• Low threshold
• Low gate drive
• SOT23 package
APPLICATIONS
• DC - DC converters
• Power management functions
• Disconnect switches
• Motor control
PINOUT
ORDERING INFORMATION
DEVICE
REEL
SIZE
TAPE
WIDTH
QUANTITY
PER REEL
ZXMP3A13FTA
7”
8mm
3000 units
ZXMP3A13FTC
13”
8mm
10000 units
DEVICE MARKING
Top View
• 313
PROVISIONAL ISSUE C - JULY 2004
1
ZXMP3A13F
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
LIMIT
UNIT
Drain-Source Voltage
V DSS
-30
V
Gate Source Voltage
V GS
20
V
Continuous Drain Current V GS =10V; T A =25°C (b)
V GS =10V; T A =70°C (b)
V GS =10V; T A =25°C (a)
ID
-1.6
-1.3
-1.4
A
Pulsed Drain Current (c)
I DM
-6
A
Continuous Source Current (Body Diode) (b)
IS
-1.2
A
Pulsed Source Current (Body Diode) (c)
I SM
-6
A
Power Dissipation at T A =25°C (a)
Linear Derating Factor
PD
625
5
mW
mW/°C
Power Dissipation at T A =25°C (b)
Linear Derating Factor
PD
806
6.4
mW
mW/°C
Operating and Storage Temperature Range
T j :T stg
-55 to +150
°C
VALUE
UNIT
THERMAL RESISTANCE
PARAMETER
SYMBOL
Junction to Ambient (a)
R θJA
200
°C/W
Junction to Ambient (b)
R θJA
155
°C/W
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t⭐5 secs.
(c) Repetitive rating 25mm x 25mm FR4 PCB, D = 0.05, pulse width 10␮s - pulse width limited by maximum junction temperature. Refer to
Transient Thermal Impedance graph.
PROVISIONAL ISSUE C - JULY 2004
2
ZXMP3A13F
CHARACTERISTICS
0.7
RDS(on)
Limited
Max Power Dissipation (W)
-ID Drain Current (A)
10
1
DC
1s
100m
100ms
10ms
10m Single Pulse
Tamb=25°C
100m
1ms
100µs
1
10
-VDS Drain-Source Voltage (V)
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0
20
MaximumPower (W)
Thermal Resistance (°C/W)
Tamb=25°C
D=0.5
100
Single Pulse
D=0.2
D=0.05
D=0.1
0
100µ 1m
10m 100m
1
10
80
100 120 140 160
Derating Curve
150
50
60
Temperature (°C)
Safe Operating Area
200
40
100
1k
Single Pulse
Tamb=25°C
10
1
100µ 1m
Pulse Width (s)
10m 100m
1
10
100
Pulse Width (s)
Transient Thermal Impedance
Pulse Power Dissipation
PROVISIONAL ISSUE C - JULY 2004
3
1k
ZXMP3A13F
ELECTRICAL CHARACTERISTICS (at TA = 25°C unless otherwise stated)
PARAMETER
SYMBOL
MIN.
-30
TYP.
MAX. UNIT CONDITIONS
STATIC
Drain-Source Breakdown Voltage
V (BR)DSS
Zero Gate Voltage Drain Current
I DSS
Gate-Body Leakage
I GSS
Gate-Source Threshold Voltage
V GS(th)
V
␮A
100
nA
-1.0
V GS =⫾20V, V DS =0V
I =-250␮A, V DS = V GS
⍀
⍀
V GS =-10V, I D =-1.4A
V GS =-4.5V, I D =-1.1A
2.48
S
V DS =-15V,I D =-1.4A
0.210
0.330
g fs
I D =-250␮A, V GS =0V
V DS =-30V, V GS =0V
V
Static Drain-Source On-State Resistance (1) R DS(on)
Forward Transconductance (1)(3)
-0.5
D
DYNAMIC (3)
Input Capacitance
C iss
204
pF
Output Capacitance
C oss
39.8
pF
Reverse Transfer Capacitance
C rss
25.8
pF
V DS =-15V, V GS =0V,
f=1MHz
SWITCHING(2) (3)
Turn-On Delay Time
t d(on)
1.5
ns
Rise Time
tr
2.8
ns
Turn-Off Delay Time
t d(off)
11.3
ns
Fall Time
tf
7.5
ns
Gate Charge
Qg
2.58
nC
Total Gate Charge
Qg
5.15
nC
Gate-Source Charge
Q gs
0.65
nC
Gate-Drain Charge
Q gd
0.92
nC
Diode Forward Voltage (1)
V SD
-0.85
Reverse Recovery Time (3)
t rr
Reverse Recovery Charge (3)
Q rr
V DD =-15V, I D =-1A
R G =6.0⍀, V GS =-10V
V DS =-15V,V GS =-5V,
I D =-1.4A
V DS =-15V,V GS =-10V,
I D =-1.4A
SOURCE-DRAIN DIODE
-0.95
V
T J =25°C, I S =-1.1A,
V GS =0V
18.6
ns
14.8
nC
T J =25°C, I F =-0.95A,
di/dt= 100A/µs
NOTES:
(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤ 2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
PROVISIONAL ISSUE C - JULY 2004
4
ZXMP3A13F
TYPICAL CHARACTERISTICS
10V
T = 25°C
5V
1
2.5V
-VGS
2V
0.1
T = 150°C
10
4V
3.5V
3V
-ID Drain Current (A)
-ID Drain Current (A)
10
0.01
10V
5V
4V
3.5V
3V
2.5V
1
2V
0.1
-VGS
1.5V
0.01
0.1
1
10
0.1
-VDS Drain-Source Voltage (V)
1
10
-VDS Drain-Source Voltage (V)
Output Characteristics
Output Characteristics
T = 25°C
0.1
1
RDS(on) Drain-Source On-Resistance (Ω)
Normalised RDS(on) and VGS(th)
T = 150°C
1
100
-VDS = 10V
2
3
4
RDS(on)
1.2
1.0
VGS(th)
0.8
VGS = VDS
ID = -250uA
0
50
100
150
-VGS Gate-Source Voltage (V)
Tj Junction Temperature (°C)
Typical Transfer Characteristics
Normalised Curves v Temperature
2V
T = 25°C
-VGS
2.5V
10
3V
3.5V
4V
1
5V
10V
0.1
VGS = -10V
ID = -1.4A
1.4
0.6
-50
5
-ISD Reverse Drain Current (A)
-ID Drain Current (A)
1.6
0.1
1
10
T = 150°C
1
T = 25°C
0.1
0.01
0.2
10
-ID Drain Current (A)
On-Resistance v Drain Current
0.4
0.6
0.8
1.0
1.2
-VSD Source-Drain Voltage (V)
1.4
Source-Drain Diode Forward Voltage
PROVISIONAL ISSUE C - JULY 2004
5
ZXMP3A13F
TYPICAL CHARACTERISTICS
10
VGS = 0V
f = 1MHz
250
-VGS Gate-Source Voltage (V)
C Capacitance (pF)
300
200
150
CISS
COSS
100
CRSS
50
0
0.1
1
10
-VDS - Drain - Source Voltage (V)
Capacitance v Drain-Source Voltage
ID = -1.4A
8
6
4
2
VDS = -15V
0
0
2
4
6
Q - Charge (nC)
Gate-Source Voltage v Gate Charge
PROVISIONAL ISSUE C - JULY 2004
6
ZXMP3A13F
PACKAGE OUTLINE
PAD LAYOUT
PACKAGE DIMENSIONS
Millimeters
DIM
Inches
Min
Max
Min
Max
A
2.67
3.05
0.105
0.120
B
1.20
1.40
0.047
C
ᎏ
1.10
ᎏ
D
0.37
0.53
F
0.085
0.15
G
1.90 NOM
Millimeters
DIM
Inches
Min
Max
Max
Max
H
0.33
0.51
0.013
0.020
0.055
K
0.01
0.10
0.0004
0.004
0.043
L
2.10
2.50
0.083
0.0985
0.015
0.021
M
0.45
0.64
0.018
0.025
0.0034
0.0059
N
0.95 NOM
0.0375 NOM
ᎏ
ᎏ
ᎏ
0.075 NOM
© Zetex Semiconductors plc 2004
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PROVISIONAL ISSUE C - JULY 2004
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