DIODES ZXT13N50DE6TA

ZXT13N50DE6
SuperSOT4™
50V NPN SILICON LOW SATURATION SWITCHING TRANSISTOR
SUMMARY
VCEO=50V; RSAT = 36m ; IC= 4A
DESCRIPTION
This new 4th generation ultra low saturation transistor utilises the Zetex
matrix structure combined with advanced assembly techniques to give
extremely low on state losses. This makes it ideal for high efficiency, low
voltage switching applications.
SOT23-6
FEATURES
•
Extremely Low Equivalent On Resistance
•
Extremely Low Saturation Voltage
•
hFE characterised up to 10A
•
IC=4A Continuous Collector Current
•
SOT23-6 package
APPLICATIONS
•
DC - DC Converters
•
Power Management Functions
•
Power switches
•
Motor control
ORDERING INFORMATION
DEVICE
REEL SIZE
(inches)
TAPE WIDTH
(mm)
QUANTITY
PER REEL
ZXT13N50DE6TA
7
8mm embossed
3000 units
ZXT13N50DE6TC
13
8mm embossed
10000 units
C
C
C
C
B
E
Top View
DEVICE MARKING
N50D
ISSUE 1 - NOVEMBER 1999
1
ZXT13N50DE6
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
LIMIT
UNIT
Collector-Base Voltage
V CBO
100
V
Collector-Emitter Voltage
V CEO
50
V
Emitter-Base Voltage
V EBO
7.5
V
Peak Pulse Current
I CM
10
A
Continuous Collector Current
IC
4
A
Base Current
IB
500
mA
Power Dissipation at TA=25°C (a)
Linear Derating Factor
PD
1.1
8.8
W
mW/°C
Power Dissipation at TA=25°C (b)
Linear Derating Factor
PD
1.7
13.6
W
mW/°C
Operating and Storage Temperature Range
T j :T stg
-55 to +150
°C
THERMAL RESISTANCE
PARAMETER
SYMBOL
VALUE
UNIT
Junction to Ambient (a)
R θJA
113
°C/W
Junction to Ambient (b)
R θJA
73
°C/W
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper,
in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t⭐5 secs.
ISSUE 1 - NOVEMBER 1999
2
ZXT13N50DE6
TYPICAL CHARACTERISTICS
1.2
Max Power Dissipation (W)
IC Collector Current (A)
10
DC
1
1s
100ms
10ms
100m
1ms
100µs
Single Pulse Tamb=25°C
10m
100m
1
10
100
VCE Collector-Emitter Voltage (V)
Thermal Resistance (°C/W)
100
80
D=0.5
Single Pulse
D=0.2
D=0.05
20
D=0.1
0
100µ
1m
10m
100m
1
10
0.6
0.4
0.2
0.0
0
20
40
60
80
100
Derating Curve
120
40
0.8
Temperature (°C)
Safe Operating Area
60
1.0
100
1k
Pulse Width (s)
Transient Thermal Impedance
ISSUE 1 - NOVEMBER 1999
3
120
140
160
ZXT13N50DE6
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL
MIN.
TYP.
Collector-Base Breakdown
Voltage
V (BR)CBO
100
Collector-Emitter Breakdown
Voltage
V (BR)CEO
Emitter-Base Breakdown Voltage
V (BR)EBO
Collector Cut-Off Current
I CBO
Emitter Cut-Off Current
UNIT
CONDITIONS.
190
V
I C =100␮A
50
70
V
I C =10mA*
7.5
8.5
V
I E =100␮A
100
nA
V CB =80V
I EBO
100
nA
V EB =6V
Collector Emitter Cut-Off Current
I CES
100
nA
V CES =80V
Collector-Emitter Saturation
Voltage
V CE(sat)
12
100
200
230
180
mV
mV
mV
mV
mV
I C =0.1A, I B =10mA*
I C =1A, I B =10mA*
I C =3A, I B =50mA*
I C =4A, I B =100mA*
I C =4A, I B =400mA*
Base-Emitter Saturation Voltage
V BE(sat)
1.0
V
I C =4A, I B =100mA*
Base-Emitter Turn-On Voltage
V BE(on)
0.9
V
I C =4A, V CE =2V*
Static Forward Current Transfer
Ratio
h FE
Transition Frequency
fT
115
MHz
I C =50mA, V CE 10V
f=50MHz
Output Capacitance
C obo
31
pF
V CB =10V, f=1MHz
Turn-On Time
t (on)
220
ns
Turn-Off Time
t (off)
830
ns
V CC =10V, I C =1A
I B1 =I B2 =20mA
8.0
75
150
175
145
250
300
100
10
400
450
220
30
MAX.
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
ISSUE 1 - NOVEMBER 1999
4
I C =10mA, V CE =2V*
I C =1A, V CE =2V*
I C =4A, V CE =2V*
I C =10A, V CE =2V*
900
ZXT13N50DE6
TYPICAL CHARACTERISTICS
0.25
IC/IB=50
Tamb=25°C
0.20
100m
100°C
VCE(SAT) (V)
VCE(SAT) (V)
IC/IB=100
IC/IB=50
10m
10m
25°C
0.10
-55°C
0.05
IC/IB=10
1m
1m
0.15
100m
1
0.00
1m
10
10m
100m
1
10
IC Collector Current (A)
IC Collector Current (A)
VCE(SAT) v IC
VCE(SAT) v IC
VCE=2V
1.2
1.0
IC/IB=50
1.0
0.8
VBE(SAT) (V)
Normalised Gain
100°C
25°C
0.6
-55°C
0.4
-55°C
25°C
0.6
100°C
0.2
0.4
0.0
1m
10m
100m
1
10
1m
IC Collector Current (A)
1.0
0.8
VCE=2V
-55°C
25°C
100°C
0.4
10m
100m
100m
VBE(SAT) v IC
0.6
1m
10m
1
1
IC Collector Current (A)
hFE v IC
VBE(ON) (V)
0.8
10
IC Collector Current (A)
VBE(ON) v IC
ISSUE 1 - NOVEMBER 1999
5
10
ZXT13N50DE6
PACKAGE DIMENSIONS
PAD LAYOUT DETAILS
e
b
L 2
E1
E
DATUM A
a
e1
D
C
A
A2
A1
DIM Millimetres
Inches
Min
Max
Min
Max
A
0.90
1.45
0.35
0.057
A1
0.00
0.15
0
0.006
A2
0.90
1.30
0.035
0.051
b
0.35
0.50
0.014
0.019
C
0.09
0.20
0.0035
0.008
D
2.80
3.00
0.110
0.118
E
2.60
3.00
0.102
0.118
E1
1.50
1.75
0.059
0.069
L
0.10
0.60
0.004
0.002
e
0.95 REF
e1
1.90 REF
L
0°
0.037 REF
0.074 REF
10°
0°
10°
Zetex plc.
Fields New Road, Chadderton, Oldham, OL9-8NP, United Kingdom.
Telephone: (44)161 622 4422 (Sales), (44)161 622 4444 (General Enquiries)
Fax: (44)161 622 4420
Zetex GmbH
Streitfeldstraße 19
D-81673 München
Germany
Telefon: (49) 89 45 49 49 0
Fax: (49) 89 45 49 49 49
Zetex Inc.
47 Mall Drive, Unit 4
Commack NY 11725
USA
Telephone: (516) 543-7100
Fax: (516) 864-7630
Zetex (Asia) Ltd.
3510 Metroplaza, Tower 2
Hing Fong Road,
Kwai Fong, Hong Kong
Telephone:(852) 26100 611
Fax: (852) 24250 494
These are supported by
agents and distributors in
major countries world-wide
© Zetex plc 1999
Internet:http://www.zetex.com
This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for
any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves
the right to alter without notice the specification, design, price or conditions of supply of any product or service.
ISSUE 1 - NOVEMBER 1999
6