DIODES ZXTP2014G

ZXTP2014G
140V PNP MEDIUM POWER LOW SATURATION TRANSISTOR
IN SOT223
SUMMARY
BVCEO = -140V : RSAT = 92m ; IC = -4A
DESCRIPTION
Packaged in the SOT223 outline this new low saturation 140V PNP transistor
offers extremely low on state losses making it ideal for use in DC-DC circuits
and various driving and power management functions.
FEATURES
SOT223
• 4 amps continuous current
• Up to 10 amps peak current
• Very low saturation voltages
APPLICATIONS
• Motor driving
• Line switching
• High side switches
• Subscriber line interface cards (SLIC)
ORDERING INFORMATION
DEVICE
REEL
SIZE
TAPE
WIDTH
QUANTITY PER
REEL
ZXTP2014GTA
7”
12mm
embossed
1,000 units
ZXTP2014GTC
13"
PINOUT
4,000 units
DEVICE MARKING
ZXTP
2014
TOP VIEW
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ZXTP2014G
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
LIMIT
UNIT
V
Collector-base voltage
BV CBO
-180
Collector-emitter voltage
BV CEO
-140
V
Emitter-base voltage
BV EBO
-7
V
Continuous collector current (a)
IC
-4
A
Peak pulse current
I CM
-10
A
Power dissipation at T A =25°C (a)
PD
3.0
W
Linear derating factor
Power dissipation at T A =25°C (b)
Linear derating factor
24
mW/°C
PD
1.6
W
12.8
mW/°C
Operating and storage temperature range
T j , T stg
-55 to 150
°C
THERMAL RESISTANCE
PARAMETER
SYMBOL
VALUE
UNIT
Junction to ambient (a)
R ⍜JA
42
°C/W
Junction to ambient (b)
R ⍜JA
78
°C/W
NOTES
(a) For a device surface mounted on 52mm x 52mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions.
(b) For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
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ZXTP2014G
CHARACTERISTICS
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ZXTP2014G
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated)
PARAMETER
SYMBOL
MIN.
TYP.
Collector-base breakdown voltage
BV CBO
-180
-200
V
I C =-100␮A
Collector-emitter breakdown voltage
BV CER
-180
-200
V
I C =-1␮A, RBⱕ1k⍀
Collector-emitter breakdown voltage
BV CEO
-140
-160
V
I C =-10mA*
Emitter-base breakdown voltage
BV EBO
-7.0
-8.0
V
I E =-100␮A
Collector cut-off current
I CBO
-20
nA
V CB =-150V
-0.5
␮A
VCB=-150V, Tamb=100⬚C
-20
nA
V CB =-150V
-0.5
␮A
VCB=-150V, Tamb=100⬚C
Collector cut-off current
MAX. UNIT CONDITIONS
⬍1
⬍1
I CER
Rⱕ1k⍀
Emitter cut-off current
I EBO
⬍1
-10
nA
V EB =-6V
Collector-emitter saturation voltage
V CE(SAT)
-40
-60
mV
-55
-80
mV
I C =-0.1A, I B =-5mA*
IC=-0.5A, IB=-50mA*
-85
-120
mV
IC=-1A, IB=-100mA*
-275
-360
mV
IC=-3A, IB=-300mA*
Base-emitter saturation voltage
V BE(SAT)
-940
-1040
mV
I C =-3A, I B =-300mA*
Base-emitter turn-on voltage
V BE(ON)
-830
-930
mV
I C =-3A, V CE =-5V*
Static forward current transfer ratio
H FE
100
225
100
200
45
100
IC=-3A, VCE=-5V*
5
IC=-10A, VCE=-5V*
120
I C =-10mA, V CE =-5V*
IC=-1A, VCE=-5V*
300
MHz IC =-100mA, VCE =-10V
Transition frequency
fT
Output capacitance
C OBO
33
pF
V CB =-10V, f=1MHz*
Switching times
t ON
42
ns
t OFF
636
I C =-1A, V CC =-50V,
I B1 = -I B2 =-100mA
f=50MHz
* Measured under pulsed conditions. Pulse width ⱕ 300␮s; duty cycle ⱕ 2%.
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ZXTP2014G
TYPICAL CHARACTERISTICS
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ZXTP2014G
PACKAGE OUTLINE
PAD LAYOUT DETAILS
Controlling dimensions are in millimeters. Approximate conversions are given in inches
PACKAGE DIMENSIONS
Millimeters
Inches
DIM
Millimeters
Inches
DIM
Min
Max
Min
Max
Min
Max
Min
Max
A
-
1.80
-
0.071
e
2.30 BSC
0.0905 BSC
A1
0.02
0.10
0.0008
0.004
e1
4.60 BSC
0.181 BSC
b
0.66
0.84
0.026
0.033
E
6.70
7.30
0.264
0.287
b2
2.90
3.10
0.114
0.122
E1
3.30
3.70
0.130
0.146
C
0.23
0.33
0.009
0.013
L
0.90
-
0.355
-
D
6.30
6.70
0.248
0.264
-
-
-
-
-
© Zetex Semiconductors plc 2005
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ISSUE 1 - JUNE 2005
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