ZXTD4591E6 DUAL 60V NPN/PNP SILICON MEDIUM POWER TRANSISTORS SUMMARY NPN: VCEO=60V; IC= 1A; hFE=100-300 PNP: VCEO=-60V; IC= -1A; hFE=100-300 DESCRIPTION Complementary NPN and PNP medium power transistors packaged in the 6 lead SOT23 package. SOT23-6 FEATURES • Low Equivalent On Resistance - NPN - PNP • Low Saturation Voltage • hFE characterised up to 2A • IC=1A Continuous Collector Current • SOT23-6 package RCE(sat) 210mΩ at 1A RCE(sat) 355mΩ at -1A C2 C1 B1 B2 E1 E2 APPLICATIONS • MOSFET gate driver • Low Power Motor Drive • Low Power DC-DC Converters DEVICE REEL SIZE (inches) TAPE WIDTH (mm) QUANTITY PER REEL ZXTD4591E6TA 7 8mm embossed 3000 units ZXTD4591E6TC 13 8mm embossed 10000 units DEVICE MARKING 4591 ISSUE 1 - JULY 2000 1 C1 B1 C2 4591 ORDERING INFORMATION Top View E1 B2 E2 ZXTD4591E6 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Collector-Base Voltage V CBO Collector-Emitter Voltage LIMIT NPN LIMIT PNP UNIT 80 -80 V V CEO 60 -60 V Emitter-Base Voltage V EBO 5 -5 V Peak Pulse Current I CM 2 -2 A Continuous Collector Current IC 1 -1 A Base Current IB 500 -500 mA Power Dissipation at TA=25°C (a) Linear Derating Factor PD 1.1 8.8 1.1 8.8 W mW/°C Power Dissipation at TA=25°C (b) Linear Derating Factor PD 1.7 13.6 1.7 13.6 W mW/°C Operating and Storage Temperature Range T j :T stg -55 to +150 -55 to +150 °C THERMAL RESISTANCE PARAMETER SYMBOL VALUE UNIT Junction to Ambient (a) R θJA 113 °C/W Junction to Ambient (b) R θJA 73 °C/W NOTES (a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions (b) For a device surface mounted on FR4 PCB measured at t⭐5 secs. ISSUE 1 - JULY 2000 2 ZXTD4591E6 PNP TRANSISTOR ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. Collector-Base Breakdown Voltage V (BR)CBO Collector-Emitter Breakdown Voltage TYP. MAX. UNIT CONDITIONS. -80 V I C =-100A V (BR)CEO -60 V I C =-10mA* Emitter-Base Breakdown Voltage V (BR)EBO -5 V I E =-100A Collector Cut-Off Current I CBO -100 nA V CB =-60V Emitter Cut-Off Current I EBO -100 nA V EB =-4V Collector Emitter Cut-Off Current I CES -100 nA V CES =-60V Collector-Emitter Saturation Voltage V CE(sat) -0.3 -0.6 V V I C =-500mA, I B =-50mA* I C =-1A, I B =-100mA* Base-Emitter Saturation Voltage V BE(sat) -1.2 V I C =-1A, I B =-100mA* Base-Emitter Turn-On Voltage V BE(on) -1.0 V I C =-1A, V CE =-5V* Static Forward Current Transfer Ratio h FE 100 100 80 15 Transition Frequency fT 150 Output Capacitance C obo I C =-1mA, V CE =-5V* I C =-500mA, V CE =-5V* I C =-1A, V CE =-5V* I C =-2A, V CE =-5V* 300 10 *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2% ISSUE 1 - JULY 2000 3 MHz I C =-50mA, V CE =-10V f=100MHz pF V CB =-10V, f=1MHz ZXTD4591E6 NPN ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. Collector-Base Breakdown Voltage V (BR)CBO Collector-Emitter Breakdown Voltage TYP. MAX. UNIT CONDITIONS. 80 V I C =100A V (BR)CEO 60 V I C =10mA* Emitter-Base Breakdown Voltage V (BR)EBO 5 V I E =100A Collector Cut-Off Current I CBO 100 nA V CB =60V Emitter Cut-Off Current I EBO 100 nA V EB =4V Collector Emitter Cut-Off Current I CES 100 nA V CES =60V Collector-Emitter Saturation Voltage V CE(sat) 0.25 0.5 V V I C =500mA, I B =50mA* I C =1A, I B =100mA* Base-Emitter Saturation Voltage V BE(sat) 1.1 V I C =1A, I B =100mA* Base-Emitter Turn-On Voltage V BE(on) 1.0 V I C =1A, V CE =5V* Static Forward Current Transfer Ratio h FE 100 100 80 30 Transition Frequency fT 150 Output Capacitance C obo I C =1mA, V CE =5V* I C =500mA, V CE =5V* I C =1A, V CE =5V* I C =2A, V CE =5V* 300 10 *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2% ISSUE 1 - JULY 2000 4 MHz I C =50mA, V CE =10V f=100MHz pF V CB =10V, f=1MHz ZXTD4591E6 NPN TYPICAL CHARACTERISTICS 0.6 0.6 +25 ° C IC/IB=10 0.5 0.5 0.4 0.4 -55 ° C +25 ° C +100 ° C IC/IB=10 CE(sat) -(V) 0.3 0.2 0.2 0.1 0.1 0 0 1mA 300 10mA 1A 100mA 10A 10mA 1mA 100mA IC-Collector Current IC-Collector Current VCE(sat) v IC VCE(sat) v IC 1.4 VCE=5V 1A 10A IC/IB=10 1.2 +100 ° C 240 1.0 0.8 +25 ° C - (V) 180 BE(sat) 120 FE h -55 ° C 0.6 -55 °C +25 ° C 0.4 +100 ° C V - Typical Gain 0.3 V V CE(sat) -(V) IC/IB=50 60 0.2 0 1mA 0 10mA 100mA 1A 1mA 10A 10mA IC-Collector Current I -Collector Current (A) - (V) 10A 10 VCE=5V 1.0 0.8 0.6 V BE(on) 1A VBE(sat) v IC hFE V IC 1.2 100mA IC-Collector Current 0.4 C -55 ° C +25 ° C +100 ° C 1 0.1 0.01 DC 1s 100ms 10ms 1ms 100µs 0.2 0 1mA 10mA 100mA 1A 0.001 0.1 10A 1 10 IC-Collector Current VCE - Collector Emitter Voltage (V) VBE(on) v IC Safe Operating Area ISSUE 1 - JULY 2000 5 100 ZXTD4591E6 PNP TYPICAL CHARACTERISTICS 0.6 0.6 +25 ° C IC/IB=10 0.5 VCE(sat) -(V) VCE(sat) -(V) 0.5 0.4 0.3 IC/IB=10 IC/IB=50 0.2 0.4 0.3 -55 °C +25 °C +100 °C 0.2 0.1 0.1 0 0 1mA 400 10mA 1A 100mA 10A 10mA 1mA 100mA 1A IC-Collector Current IC-Collector Current VCE(sat) v IC VCE(sat) v IC VCE=5V 10A IC/IB=10 1.0 hFE - Typical Gain VBE(sat) - (V) +100 °C 300 +25 °C 200 100 -55 °C 0.8 0.6 -55 °C +25 °C +100 °C 0.4 0.2 0 1mA 0 10mA 100mA 1A 1mA 10A IC-Collector Current 10A VBE(sat) v IC 10 VCE=5V IC-Collector Current (A) 1.0 VBE(on) - (V) 1A IC-Collector Current hFE V IC 1.2 100mA 10mA 0.8 0.6 -55 °C +25 °C +100 °C 0.4 0.2 1 0.1 DC 1s 100ms 10ms 1ms 100us 0.01 0 1mA 10mA 100mA 1A 10A 0.1V IC-Collector Current 1V 10V VCE - Collector Emitter Voltage (V) VBE(on) v IC Safe Operating Area ISSUE 1 - JULY 2000 6 100V ZXTD4591E6 PACKAGE DIMENSIONS PAD LAYOUT DETAILS e b L 2 E1 E DATUM A a e1 D C A A2 A1 DIM Millimetres Inches Min Max Min Max A 0.90 1.45 0.35 0.057 A1 0.00 0.15 0 0.006 A2 0.90 1.30 0.035 0.051 b 0.35 0.50 0.014 0.019 C 0.09 0.20 0.0035 0.008 D 2.80 3.00 0.110 0.118 E 2.60 3.00 0.102 0.118 E1 1.50 1.75 0.059 0.069 L 0.10 0.60 0.004 0.002 e 0.95 REF e1 1.90 REF L 0° 0.037 REF 0.074 REF 10° 0° 10° Zetex plc. Fields New Road, Chadderton, Oldham, OL9-8NP, United Kingdom. Telephone: (44)161 622 4422 (Sales), (44)161 622 4444 (General Enquiries) Fax: (44)161 622 4420 Zetex GmbH Streitfeldstraße 19 D-81673 München Germany Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 Zetex Inc. 47 Mall Drive, Unit 4 Commack NY 11725 USA Telephone: (631) 543-7100 Fax: (631) 864-7630 Zetex (Asia) Ltd. 3701-04 Metroplaza, Tower 1 Hing Fong Road, Kwai Fong, Hong Kong Telephone:(852) 26100 611 Fax: (852) 24250 494 These are supported by agents and distributors in major countries world-wide © Zetex plc 2000 Internet:http://www.zetex.com This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. ISSUE 1 - JULY 2000 7