SuperSOT SOT23 PNP SILICON POWER (SWITCHING) TRANSISTORS DIM A B C D F G K L N Millimeters Min Max 2.67 3.05 1.20 1.40 1.10 0.37 0.53 0.085 0.15 NOM 1.9 0.01 0.10 2.10 2.50 NOM 0.95 Inches Min Max 0.105 0.120 0.047 0.055 0.043 0.0145 0.021 0.0033 0.0059 NOM 0.075 0.0004 0.004 0.0825 0.0985 NOM 0.37 FMMT717 FMMT718 FMMT720 FMMT722 FMMT723 ISSUE 3 JUNE 1996 FEATURES * 625mW POWER DISSIPATION * * * * * IC CONT 2.5A IC Up To 10A Peak Pulse Current Excellent hfe Characteristics Up To 10A (pulsed) Extremely Low Saturation Voltage E.g. 10mV Typ. Exhibits extremely low equivalent on-resistance; RCE(sat) E C B DEVICE TYPE COMPLEMENT PARTMARKING RCE(sat) FMMT717 FMMT617 717 72mΩ at 2.5A FMMT718 FMMT618 718 97mΩ at 1.5A FMMT720 FMMT619 720 163mΩ at 1.5A FMMT722 722 - FMMT723 FMMT624 723 - ABSOLUTE MAXIMUM RATINGS Zetex plc. Fields New Road, Chadderton, Oldham, OL9-8NP, United Kingdom. Telephone: (44)161-627 5105 (Sales), (44)161-627 4963 (General Enquiries) Fax: (44)161-627 5467 Zetex GmbH Streitfeldstraße 19 D-81673 München Germany Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 Zetex Inc. 47 Mall Drive, Unit 4 Commack NY 11725 USA Telephone: (516) 543-7100 Fax: (516) 864-7630 Zetex (Asia) Ltd. 3510 Metroplaza, Tower 2 Hing Fong Road, Kwai Fong, Hong Kong Telephone:(852) 26100 611 Fax: (852) 24250 494 These are supported by agents and distributors in major countries world-wide Zetex plc 1997 Internet: http://www.zetex.com This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. FMMT 717 FMMT 718 FMMT 720 FMMT 722 FMMT 723 UNIT VCBO -12 -20 -40 -70 -100 V Collector-Emitter Voltage VCEO -12 -20 -40 -70 -100 V Emitter-Base Voltage VEBO -5 -5 -5 -5 -5 V Peak Pulse Current** ICM -10 -6 -4 -3 -2.5 A Continuous Collector Current IC -2.5 -1.5 -1.5 -1.5 -1 A Base Current IB -500 mA Power Dissipation at Tamb=25°C* Ptot 625 mW Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C PARAMETER SYMBOL Collector-Base Voltage *Maximum power dissipation is calculated assuming that the device is mounted on a ceramic substrate measuring 15x15x0.6mm **Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% Spice parameter data is available upon request for these devices 3 - 159 FMMT717 FMMT717 TYPICAL CHARACTERISTICS ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. Collector-Base Breakdown Voltage V(BR)CBO -12 -35 V IC=-100µA Collector-Emitter Breakdown Voltage V(BR)CEO -12 -25 V IC=-10mA* Emitter-Base Breakdown Voltage V(BR)EBO -5 -8.5 V IE=-100µA Collector Cut-Off Current ICBO -100 nA VCB=-10V Emitter Cut-Off Current IEBO -100 nA VEB=-4V Collector Emitter Cut-Off Current ICES -100 nA VC ES=-10V Collector-Emitter Saturation Voltage VCE(sat) -10 -100 -110 -180 -17 -140 -170 -220 mV mV mV mV IC=-0.1A, IB=-10mA* IC=-1A, IB=-10mA* IC=-1.5A, IB=-50mA* IC=-2.5A, IB=-50mA* 1 0.8 +25°C 0.7 0.6 100m 0.5 0.4 10m 1m 1m 1.6 10m 100m 1 0.2 0.1 0.0 1mA 10 VCE(SAT) vs IC 1.6 VCE=2V 1.4 450 -1.0 V IC=-2.5A, IB=-50mA* 1.2 Base-Emitter Turn-On Voltage VBE(on) -0.8 -1.0 V IC=-2.5A, VCE=-2V* 0.8 IC=-10mA, VCE=-2V* IC=-100mA, VCE=-2V* IC=-2.5A, VCE=-2V* IC=-8A, VCE=-2V* IC=-10A, VCE=-2V* 0.4 0.4 0.2 0.2 Transition Frequency fT 80 110 Output Capacitance Cobo 21 Turn-On Time t(on) Turn-Off Time t(off) MHz IC=-50mA, VCE=-10V f=100MHz pF VCB=-10V, f=1MHz 70 ns 130 ns VCC=-6V, IC=-2A IB1=IB2=50mA 30 *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% 25°C 100mA 1A 10A 0 100A 0.0 1mA 10mA Collector Current 100mA 1A Collector Current hFE vs IC 1.2 100A 25°C 100°C 0.6 225 10mA 10A -55°C 0.8 0.0 1mA 100A IC/IB=10 1.0 -55°C 10A 1.2 -0.9 475 450 275 100 70 1A VCE(SAT) vs IC VBE(sat) 300 300 180 60 45 100mA Collector Current 1.4 0.6 10mA Collector Current (A) 100°C 1.0 100°C 25°C -55°C 0.3 IC/IB=100 IC/IB=50 IC/IB=30 IC/IB=10 Base-Emitter Saturation Voltage Static Forward Current hFE Transfer Ratio IC/IB=10 VBE(SAT) vs IC 10 VCE=2V SINGLE PULSE TEST Tamb = 25 deg C 1.0 0.8 0.6 -55°C 1.0 25°C 100°C 0.1 0.4 D.C. 1s 100ms 10ms 1ms 100µs 0.2 0.0 1mA 10mA 100mA 1A 10A 100A Collector Current 1.0 10 VCE (VOLTS) VBE(ON) vs IC 3 - 160 0.01 0.1 Safe Operating Area 3 - 161 100 FMMT717 FMMT717 TYPICAL CHARACTERISTICS ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. Collector-Base Breakdown Voltage V(BR)CBO -12 -35 V IC=-100µA Collector-Emitter Breakdown Voltage V(BR)CEO -12 -25 V IC=-10mA* Emitter-Base Breakdown Voltage V(BR)EBO -5 -8.5 V IE=-100µA Collector Cut-Off Current ICBO -100 nA VCB=-10V Emitter Cut-Off Current IEBO -100 nA VEB=-4V Collector Emitter Cut-Off Current ICES -100 nA VC ES=-10V Collector-Emitter Saturation Voltage VCE(sat) -10 -100 -110 -180 -17 -140 -170 -220 mV mV mV mV IC=-0.1A, IB=-10mA* IC=-1A, IB=-10mA* IC=-1.5A, IB=-50mA* IC=-2.5A, IB=-50mA* 1 0.8 +25°C 0.7 0.6 100m 0.5 0.4 10m 1m 1m 1.6 10m 100m 1 0.2 0.1 0.0 1mA 10 VCE(SAT) vs IC 1.6 VCE=2V 1.4 450 -1.0 V IC=-2.5A, IB=-50mA* 1.2 Base-Emitter Turn-On Voltage VBE(on) -0.8 -1.0 V IC=-2.5A, VCE=-2V* 0.8 IC=-10mA, VCE=-2V* IC=-100mA, VCE=-2V* IC=-2.5A, VCE=-2V* IC=-8A, VCE=-2V* IC=-10A, VCE=-2V* 0.4 0.4 0.2 0.2 Transition Frequency fT 80 110 Output Capacitance Cobo 21 Turn-On Time t(on) Turn-Off Time t(off) MHz IC=-50mA, VCE=-10V f=100MHz pF VCB=-10V, f=1MHz 70 ns 130 ns VCC=-6V, IC=-2A IB1=IB2=50mA 30 *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% 25°C 100mA 1A 10A 0 100A 0.0 1mA 10mA Collector Current 100mA 1A Collector Current hFE vs IC 1.2 100A 25°C 100°C 0.6 225 10mA 10A -55°C 0.8 0.0 1mA 100A IC/IB=10 1.0 -55°C 10A 1.2 -0.9 475 450 275 100 70 1A VCE(SAT) vs IC VBE(sat) 300 300 180 60 45 100mA Collector Current 1.4 0.6 10mA Collector Current (A) 100°C 1.0 100°C 25°C -55°C 0.3 IC/IB=100 IC/IB=50 IC/IB=30 IC/IB=10 Base-Emitter Saturation Voltage Static Forward Current hFE Transfer Ratio IC/IB=10 VBE(SAT) vs IC 10 VCE=2V SINGLE PULSE TEST Tamb = 25 deg C 1.0 0.8 0.6 -55°C 1.0 25°C 100°C 0.1 0.4 D.C. 1s 100ms 10ms 1ms 100µs 0.2 0.0 1mA 10mA 100mA 1A 10A 100A Collector Current 1.0 10 VCE (VOLTS) VBE(ON) vs IC 3 - 160 0.01 0.1 Safe Operating Area 3 - 161 100 FMMT617 FMMT624 FMMT618 FMMT625 FMMT619 SuperSOT Series FMMT717 FMMT722 FMMT718 FMMT723 FMMT720 THERMAL CHARACTERISTICS AND DERATING INFORMATION DERATING CURVE MAXIMUM TRANSIENT THERMAL RESISTANCE * Reference above figures, Devices were mounted on a 15mmx15mm ceramic substrate 3 - 158