ZXTN25040DFL 40V, SOT23, NPN low power transistor Summary BVCEX > 130V BVCEO > 40V BVECO > 6V IC(cont) = 1.5A VCE(sat) < 85mV @ 1A RCE(sat) = 59m⍀ PD = 350mW Complementary part number ZXTP25040DFL Description C Advanced process capability has been used to achieve high current gain hold up making this device ideal for applications requiring high pulse currents. B Features • High peak current • Low saturation voltage • 130V forward blocking voltage • 6V reverse blocking voltage E Applications E • MOSFET and IGBT gate driving • DC-DC conversion • LED driving • Interface between low voltage IC's and loads C B Pinout - top view Ordering information Device ZXTN25040DFLTA Reel size (inches) Tape width (mm) Quantity per reel 7 8 3000 Device marking 1B7 Issue 3 - March 2008 © Zetex Semiconductors plc 2008 1 www.zetex.com ZXTN25040DFL Absolute maximum ratings Parameter Symbol Limit Unit Collector-base voltage VCBO 130 V Collector-emitter voltage (forward blocking) VCEX 130 V Collector-emitter voltage VCEO 40 V Emitter-collector voltage (reverse blocking) VECO 6 V Emitter-base voltage VEBO 7 V Continuous collector current(a) IC 1.5 A Base current IB 0.5 A Peak pulse current ICM 6 A Power dissipation at Tamb = 25°C(a) PD 350 mW 2.8 mW/°C Tj, Tstg -55 to 150 °C Symbol Limit Unit R⍜JA 357 °C/W Linear derating factor Operating and storage temperature range Thermal resistance Parameter Junction to ambient(a) NOTES: (a) For a device surface mounted on 25mm x 25mm x 0.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. Issue 3 - March 2008 © Zetex Semiconductors plc 2008 2 www.zetex.com ZXTN25040DFL Characteristics Issue 3 - March 2008 © Zetex Semiconductors plc 2008 3 www.zetex.com ZXTN25040DFL Electrical characteristics (at Tamb = 25°C unless otherwise stated) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage (forward blocking) Collector-emitter breakdown voltage (base open) Emitter-base breakdown voltage Emitter-collector breakdown voltage (reverse blocking) Symbol BVCBO Min. 130 Typ. 170 Max. Unit Conditions V IC = 100A BVCEX 130 170 V IC = 100A; RBE < 1k⍀ or -1V < VBE < 0.25V BVCEO 40 63 V IC = 10mA (*) BVEBO 7 8.3 V IE = 100A BVECX 6 7.4 V IE = 100A, RBC < 1k⍀ or 0.25V > VBC > -0.25V Emitter-collector breakdown BVECO voltage (base open) Collector cut-off current ICBO 6 7.4 V IE = 100A, <1 50 20 nA A VCB = 100V VCB = 100V, Tamb= 100°C ICEX <1 100 nA VCE = 100V; RBE < 1k⍀ or -1V < VBE < 0.25V Emitter cut-off current IEBO <1 50 nA VEB = 5.6V Collector-emitter saturation voltage VCE(sat) 35 50 mV IC = 0.5A, IB = 50mA(*) 60 80 mV IC = 0.5A, IB = 10mA(*) 70 85 mV IC = 1A, IB = 100mA 145 185 mV IC = 1.5A, IB = 30mA(*) 235 285 mV IC = 4A, IB = 400mA(*) VBE(sat) 840 950 mV IC = 1.5A, IB = 30mA(*) VBE(on) 770 850 mV IC = 1.5A, VCE = 2V(*) 300 450 900 300 400 IC = 1A, VCE = 2V(*) 170 250 IC = 1.5A, VCE = 2V(*) 25 40 IC = 4A, VCE = 2V(*) Collector emitter cut-off current Base-emitter saturation voltage Base-emitter turn-on voltage Static forward current transfer ratio hFE Transition frequency fT 190 Output capacitance Cobo 11.7 Delay time t(d) Rise time IC = 10mA, VCE = 2V(*) MHz IC = 50mA, VCE = 10V f = 100MHz 20 pF VCB = 10V, f = 1MHz(*) 64 ns t(r) 108 ns Storage time t(s) 428 ns VCC = 10V, IC = 1A, IB1 = IB2= 10mA. Fall time t(f) 130 ns NOTES: (*) Measured under pulsed conditions. Pulse width ⱕ300s; duty cycle ⱕ2%. Issue 3 - March 2008 © Zetex Semiconductors plc 2008 4 www.zetex.com ZXTN25040DFL Typical characteristics Issue 3 - March 2008 © Zetex Semiconductors plc 2008 5 www.zetex.com ZXTN25040DFL Package outline - SOT23 E e e1 b 3 leads L1 D E1 A A1 Dim. L c Millimeters Inches Dim. Millimeters Min. Max. Min. Max. A - 1.12 - 0.044 e1 A1 0.01 0.10 0.0004 0.004 E 2.10 2.64 0.083 0.104 b 0.30 0.50 0.012 0.020 E1 1.20 1.40 0.047 0.055 c 0.085 0.20 0.003 0.008 L 0.25 0.60 0.0098 0.0236 D 2.80 3.04 0.110 0.120 L1 0.45 0.62 0.018 0.024 - - - - - e 0.95 NOM Min. 0.037 NOM Max. Inches 1.90 NOM Min. Max. 0.075 NOM Note: Controlling dimensions are in millimeters. Approximate dimensions are provided in inches Issue 3 - March 2008 © Zetex Semiconductors plc 2008 6 www.zetex.com ZXTN25040DFL Intentionally left blank Issue 3 - March 2008 © Zetex Semiconductors plc 2008 7 www.zetex.com ZXTN25040DFL Definitions Product change Zetex Semiconductors reserves the right to alter, without notice, specifications, design, price or conditions of supply of any product or service. Customers are solely responsible for obtaining the latest relevant information before placing orders. Applications disclaimer The circuits in this design/application note are offered as design ideas. It is the responsibility of the user to ensure that the circuit is fit for the user’s application and meets with the user’s requirements. No representation or warranty is given and no liability whatsoever is assumed by Zetex with respect to the accuracy or use of such information, or infringement of patents or other intellectual property rights arising from such use or otherwise. Zetex does not assume any legal responsibility or will not be held legally liable (whether in contract, tort (including negligence), breach of statutory duty, restriction or otherwise) for any damages, loss of profit, business, contract, opportunity or consequential loss in the use of these circuit applications, under any circumstances. Life support Zetex products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Zetex Semiconductors plc. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Reproduction The product specifications contained in this publication are issued to provide outline information only which (unless agreed by the company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. Terms and Conditions All products are sold subjects to Zetex’ terms and conditions of sale, and this disclaimer (save in the event of a conflict between the two when the terms of the contract shall prevail) according to region, supplied at the time of order acknowledgement. For the latest information on technology, delivery terms and conditions and prices, please contact your nearest Zetex sales office. Quality of product Zetex is an ISO 9001 and TS16949 certified semiconductor manufacturer. To ensure quality of service and products we strongly advise the purchase of parts directly from Zetex Semiconductors or one of our regionally authorized distributors. For a complete listing of authorized distributors please visit: www.zetex.com/salesnetwork Zetex Semiconductors does not warrant or accept any liability whatsoever in respect of any parts purchased through unauthorized sales channels. ESD (Electrostatic discharge) Semiconductor devices are susceptible to damage by ESD. Suitable precautions should be taken when handling and transporting devices. The possible damage to devices depends on the circumstances of the handling and transporting, and the nature of the device. The extent of damage can vary from immediate functional or parametric malfunction to degradation of function or performance in use over time. Devices suspected of being affected should be replaced. 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Samples may be available “Active” Product status recommended for new designs “Last time buy (LTB)” Device will be discontinued and last time buy period and delivery is in effect “Not recommended for new designs” Device is still in production to support existing designs and production “Obsolete” Production has been discontinued Datasheet status key: “Draft version” This term denotes a very early datasheet version and contains highly provisional information, which may change in any manner without notice. “Provisional version” This term denotes a pre-release datasheet. It provides a clear indication of anticipated performance. However, changes to the test conditions and specifications may occur, at any time and without notice. “Issue” This term denotes an issued datasheet containing finalized specifications. However, changes to specifications may occur, at any time and without notice. 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