ZXTN25050DFH 50V, SOT23, NPN medium power transistor Summary BVCEX > 150V BVCEO > 50V BVECO > 5V IC(cont) = 4A VCE(sat) < 60mV @ 1A RCE(sat) = 40m⍀ PD = 1.25W Description C Advanced process capability and package design have been used to maximize the power handling and performance of this small outline transistor. The compact size and ratings of this device make it ideally suited to applications where space is at a premium. B Features • High power dissipation SOT23 package • High peak current • High gain • Low saturation voltage • 150V forward blocking voltage • 5V reverse blocking voltage E E Applications • MOSFET gate drivers • Power switches • Motor control • DC fans • DC-DC converters C B Pinout - top view Ordering information Device ZXTN25050DFHTA Reel size (inches) Tape width (mm) Quantity per reel 7 8 3,000 Device marking 017 Issue 3 - September 2006 © Zetex Semiconductors plc 2006 1 www.zetex.com ZXTN25050DFH Absolute maximum ratings Parameter Symbol Limit Unit Collector-base voltage VCBO 150 V Collector-emitter voltage (forward blocking) VCEX 150 V Collector-emitter voltage VCEO 50 V Emitter-collector voltage (reverse blocking) VECO 5 V Emitter-base voltage VEBO 7 V Continuous collector current (c) IC 4 A Base current IB 1 A Peak pulse current ICM 10 A Power dissipation at Tamb =25°C (a) Linear derating factor PD 0.73 5.84 W mW/°C Power dissipation at Tamb =25°C (b) Linear derating factor PD 1.05 8.4 W mW/°C Power dissipation at Tamb =25°C (c) Linear derating factor PD 1.25 9.6 W mW/°C Power dissipation at Tamb =25°C (d) Linear derating factor PD 1.81 14.5 W mW/°C Tj, Tstg - 55 to 150 °C Symbol Limit Unit Junction to ambient (a) R⍜JA 171 °C/W Junction to ambient (b) R⍜JA 119 °C/W Junction to ambient (c) R⍜JA 100 °C/W Junction to ambient (d) R⍜JA 69 °C/W Operating and storage temperature range Thermal resistance Parameter NOTES: (a) For a device surface mounted on 15mm x 15mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. (b) Mounted on 25mm x 25mm x 1.6mm FR4 PCB with a high coverage of single sided 2 oz copper in still air conditions. (c) Mounted on 50mm x 50mm x 1.6mm FR4 PCB with a high coverage of single sided 2 oz copper in still air conditions. (d) As (c) above measured at t<5secs. Issue 3 - September 2006 © Zetex Semiconductors plc 2006 2 www.zetex.com ZXTN25050DFH Characteristics Issue 3 - September 2006 © Zetex Semiconductors plc 2006 3 www.zetex.com ZXTN25050DFH Electrical characteristics (at Tamb = 25°C unless otherwise stated) Parameter Min. Typ. Collector-base breakdown voltage BVCBO Collector-emitter breakdown BVCEX voltage (forward blocking) Symbol 150 180 Max. Unit Conditions V IC = 100A 150 180 V IC = 100A, RBE ⱕ 1k⍀ or -1V < VBE < 0.25V Collector-emitter breakdown voltage (base open) BVCEO 50 67 V IC = 10mA (*) Emitter-collector breakdown voltage (reverse blocking) BVECX 5 8 V IE = 100A, RBC ⱕ 1k⍀ or 0.25V > VBC > -0.25V Emitter-collector breakdown voltage (base open) BVECO 5 7.4 V IE = 100A, Emitter-base breakdown voltage BVEBO 7 8.3 V IE = 100A Collector cut-off current ICBO <1 50 20 nA A VCB = 150V VCB = 150V, Tamb= 100°C Collector-emitter cut-off current ICEX - 100 nA VCE = 150V; RBE ⱕ 1k⍀ or -1V < VBE < 0.25V Emitter cut-off current IEBO <1 50 nA VEB = 5.6V Collector-emitter saturation voltage VCE(sat) 50 60 mV IC = 1A, IB = 100mA (*) 160 260 mV IC = 1A, IB = 10mA (*) 180 250 mV IC = 2A, IB = 40mA (*) 190 235 mV IC = 3,5A, IB = 175mA (*) 160 210 mV IC = 4A, IB = 400mA (*) Base-emitter saturation voltage VBE(sat) 970 1070 mV IC = 4A, IB = 400mA (*) Base-emitter turn-on voltage VBE(on) 870 970 mV IC = 4A, VCE = 2V (*) 300 450 900 240 410 IC = 1A, VCE = 2V (*) 20 40 IC = 4A, VCE = 2V (*) Static forward current transfer hFE ratio Transition frequency fT 200 Output capacitance COBO 12 Delay time t(d) Rise time IC = 10mA, VCE = 2V (*) MHz IC = 50mA, VCE = 10V f = 100MHz 20 pF VCB = 10V, f = 1MHz (*) 65 ns t(r) 111 ns VCC = 10V. IC = 1A, IB1 = IB2= 10mA. Storage time t(s) 429 ns Fall time t(f) 140 ns NOTES: (*) Measured under pulsed conditions. Pulse width ⱕ 300s; duty cycle ⱕ 2%. Issue 3 - September 2006 © Zetex Semiconductors plc 2006 4 www.zetex.com ZXTN25050DFH Typical characteristics Issue 3 - September 2006 © Zetex Semiconductors plc 2006 5 www.zetex.com ZXTN25050DFH Package outline - SOT23 L H N G D 3 leads M A B C K Dim. F Millimeters Inches Min. Max. Min. Max. A 2.67 3.05 0.105 0.120 B 1.20 1.40 0.047 C - 1.10 D 0.37 F 0.085 G Dim. Millimeters Inches Min. Max. Max. Max. H 0.33 0.51 0.013 0.020 0.055 K 0.01 0.10 0.0004 0.004 - 0.043 L 2.10 2.50 0.083 0.0985 0.53 0.015 0.021 M 0.45 0.64 0.018 0.025 0.15 0.0034 0.0059 N 0.95 NOM - - 1.90 NOM 0.075 NOM 0.0375 NOM - - - Note: Controlling dimensions are in millimeters. Approximate dimensions are provided in inches Europe Americas Asia Pacific Corporate Headquarters Zetex GmbH Kustermann-park Balanstraße 59 D-81541 München Germany Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 [email protected] Zetex Inc 700 Veterans Memorial Highway Hauppauge, NY 11788 USA Zetex (Asia Ltd) 3701-04 Metroplaza Tower 1 Hing Fong Road, Kwai Fong Hong Kong Zetex Semiconductors plc Zetex Technology Park, Chadderton Oldham, OL9 9LL United Kingdom Telephone: (1) 631 360 2222 Fax: (1) 631 360 8222 [email protected] Telephone: (852) 26100 611 Fax: (852) 24250 494 [email protected] Telephone: (44) 161 622 4444 Fax: (44) 161 622 4446 [email protected] For international sales offices visit www.zetex.com/offices Zetex products are distributed worldwide. For details, see www.zetex.com/salesnetwork This publication is issued to provide outline information only which (unless agreed by the company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contact or be regarded as a representation relating to the products or services concerned. The company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. Issue 3 - September 2006 © Zetex Semiconductors plc 2006 6 www.zetex.com