ZXTP2029F 100V, SOT23, PNP medium power transistor Summary V(BR)CEV > -130V, V(BR)CEO > -100V IC(cont) = -3A RCE(sat) = 45m⍀ typical VCE(sat) < -80mV @ -1A PD = 1.2W Complementary part number: ZXTN2020F Description Advanced process capability and package design have been used to maximize the power handling and performance of this small outline transistor. The compact size and ratings of this device make it ideally suited to applications where space is at a premium. Features • Higher power dissipation SOT23 package • High peak current • Low saturation voltage • 130V forward blocking voltage Applications • MOSFET and IGBT gate driving • Motor drive • DC-DC converters • High side switches Pinout - top view Ordering information Device Reel size (inches) Tape width Quantity per reel 7 8mm 3,000 ZXTP2029FTA Device marking 953 Issue 2 - September 2005 © Zetex Semiconductors plc 2005 1 www.zetex.com ZXTP2029F Absolute maximum ratings Parameter Symbol Limit Unit Collector-base voltage VCBO -130 V Collector-emitter voltage V(BR)CEV -130 V Collector-emitter voltage VCEO -100 V Emitter-base voltage VEBO -7.0 V Peak pulse current ICM -5 A Continuous collector current(a) IC -3 A Base current IB -1 A Power dissipation @ TA=25oC(a) Linear derating factor PD 1.0 W mW/oC Power dissipation @ TA=25oC(b) Linear derating factor PD Power dissipation @ TA=25oC(c) Linear derating factor PD Operating and storage temperature Tj:Tstg 8.0 1.2 W mW/oC 9.6 1.56 12.5 W mW/oC -55 to +150 oC Thermal resistance Parameter Symbol Value Unit (a) RθJA 125 o Junction to ambient (b) RθJA 104 o Junction to ambient (c) RθJA 80 o Junction to ambient C/W C/W C/W NOTES: (a) Mounted on 18mm x 18mm x 1.6mm FR4 PCB with a very high coverage of 2 oz weight copper in still air conditions. (b) Mounted on 30mm x 30mm x 1.6mm FR4 PCB with a very high coverage of 2 oz weight copper in still air conditions. (c) As (b) above measured at t<5secs. Issue 2 - September 2005 © Zetex Semiconductors plc 2005 2 www.zetex.com ZXTP2029F Characteristics Issue 2 - September 2005 © Zetex Semiconductors plc 2005 3 www.zetex.com ZXTP2029F Electrical characteristics (at Tamb = 25°C unless otherwise stated) Parameter Symbol Min. Typ. Collector-base breakdown voltage V(BR)CBO -130 Collector-emitter breakdown voltage V(BR)CEV Collector-emitter breakdown voltage Unit Conditions -160 V IC=-100µA -130 -160 V IC =−1µA, 1V> VBE>-0.3V V(BR)CEO -100 -120 V IC=-10mA (a) Emitter-base breakdown voltage V(BR)EBO -7.0 -8.3 V IE=-100µA Collector-emitter cut-off current ICEV -20 nA VCE=-100V, VBE = 1V Collector-base cut-off current ICBO -20 nA VCB=-100V Emitter-base cut-off current IEBO -10 nA VEB=-6V Static forward current transfer ratio HFE Collector-emitter saturation voltage 100 220 100 200 40 75 VCE(sat) Max. IC=-10mA, VCE=-2V(a) IC=-1A, VCE=-2V(a) 300 Ic=-3A, VCE=-2V -20 -30 mV IC=-100mA, IB=-10mA(a) -60 -80 mV IC=-1A, IB=-100mA(a) -135 -180 mV IC=-3A, IB=-300mA(a) -180 -250 mV IC=-4A, IB=-400mA(a) Base-emitter saturation voltage VBE(sat) -0.90 -1.00 V IC=-3A, IB=-300mA(a) Base-emitter turn-on voltage VBE(on) -0.81 -0.90 V IC=-3A, VCE=-2V(a) Transition frequency fT 150 MHz Output capacitance Cobo 39 pF VCB=-10V, f=1MHz Turn–on time t(on) 33 ns VCC=-10V, IC=-1A, Turn-off time t(off) 344 ns IB1=IB2=-100mA Ic=-100mA, VCE=-10V, f=50MHz NOTES: (a) Measured under pulsed conditions. Pulse width=300S. Duty cycle ⱕ2%. Issue 2 - September 2005 © Zetex Semiconductors plc 2005 4 www.zetex.com ZXTP2029F Typical characteristics Issue 2 - September 2005 © Zetex Semiconductors plc 2005 5 www.zetex.com ZXTP2029F Packaging details - SOT23 L H N G D 3 leads M A B C K Dim. F Millimeters Inches Min. Max. Min. Max. A 2.67 3.05 0.105 0.120 B 1.20 1.40 0.047 C - 1.10 D 0.37 F 0.085 G Dim. Millimeters Inches Min. Max. Max. Max. H 0.33 0.51 0.013 0.020 0.055 K 0.01 0.10 0.0004 0.004 - 0.043 L 2.10 2.50 0.083 0.0985 0.53 0.015 0.021 M 0.45 0.64 0.018 0.025 0.15 0.0034 0.0059 N 0.95 NOM - - 1.90 NOM 0.075 NOM 0.0375 NOM - - - Note: Controlling dimensions are in millimeters. Approximate dimensions are provided in inches Europe Americas Asia Pacific Corporate Headquarters Zetex GmbH Streitfeldstraße 19 D-81673 München Germany Zetex Inc 700 Veterans Memorial Highway Hauppauge, NY 11788 USA Zetex (Asia Ltd) 3701-04 Metroplaza Tower 1 Hing Fong Road, Kwai Fong Hong Kong Zetex Semiconductors plc Zetex Technology Park, Chadderton Oldham, OL9 9LL United Kingdom Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 [email protected] Telephone: (1) 631 360 2222 Fax: (1) 631 360 8222 [email protected] Telephone: (852) 26100 611 Fax: (852) 24250 494 [email protected] Telephone (44) 161 622 4444 Fax: (44) 161 622 4446 [email protected] These offices are supported by agents and distributors in major countries world-wide. This publication is issued to provide outline information only which (unless agreed by the company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contact or be regarded as a representation relating to the products or services concerned. The company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. Issue 2 - September 2005 © Zetex Semiconductors plc 2005 6 www.zetex.com