A Product Line of Diodes Incorporated ZXTN4004K 150V NPN LED DRIVING TRANSISTOR IN TO252 Features Mechanical Data • • • • • • • • • • • • BVCEO > 150V hFE > 100 for IC = 150mA, VCE = 0.25V IC (cont) = 1A Lead Free, RoHS Compliant (Note 1) Halogen and Antimony Free "Green" Device (Note 2) Qualified to AEC-Q101 Standards for High Reliability Case: TO252 Case material: molded Plastic. “Green” molding Compound. UL Flammability Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Matte Tin Finish Weight: 0.34 grams (Approximate) Applications • LED TV backlight C C TO252 B C E Top View Device symbol B E Top View Pin Out Ordering Information Product ZXTN4004KTC Notes: Marking ZXTN4004 Reel size (inches) 13 Tape width (mm) 16 Quantity per reel 2,500 1. No purposefully added lead. 2. “Green” devices, Halogen and Antimony Free, Diodes Inc’s “Green” Policy can be found on our website at http://www.diodes.com Marking Information ZXTN 4004 YYWW ZXTN4004K Document Number: DS35458 Rev: 1 - 2 ZXTN4004 = Product Marking Code YYWW = Date Code Marking YY = Last Digit of Year (ex: 10 = 2010) WW = Week Code (01 – 53) 1 of 5 www.diodes.com December 2011 © Diodes Incorporated A Product Line of Diodes Incorporated ZXTN4004K Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Pulse Current (Note 4) Base Current Symbol VCBO VCEO VEBO IC ICM IB Value 150 150 7 1 3 500 Unit V V V A A mA Value 3.8 33 12 -55 to +150 Unit W °C/W °C/W °C Thermal Characteristics @TA = 25°C unless otherwise specified Characteristic Power Dissipation Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Leads Operating and Storage Temperature Range Notes: Symbol PD RθJA RθJL TJ, TSTG (Note 3) (Note 3) (Note 5) 3. For a device surface mounted on 50mm X 50mm FR4 PCB with high coverage of single sided 2 oz copper, in still air conditions 4. Measured under pulsed conditions. Pulse width = 300µs. Duty cycle ≤ 2%. 5. Thermal resistance from junction to solder-point (on the exposed collector pad). Thermal Characteristics and Derating Information 30 T amb=25°C 25 20 D=0.5 15 10 Single Pulse D=0.2 D=0.05 5 0 100µ D=0.1 1m 10m 100m 1 10 100 1k Pulse Width (s) Max Power Dissipation (W) Thermal Resistance (°C/W) 35 4.0 3.6 3.2 2.8 2.4 2.0 1.6 1.2 0.8 0.4 0.0 20 40 60 80 100 120 140 160 Temperature (°C) Derating Curve Transient Thermal Impedance Maximum Power (W) 0 Single Pulse T amb=25°C 100 10 1 100µ 1m 10m 100m 1 10 100 1k Pulse Width (s) Pulse Power Dissipation ZXTN4004K Document Number: DS35458 Rev: 1 - 2 2 of 5 www.diodes.com December 2011 © Diodes Incorporated A Product Line of Diodes Incorporated ZXTN4004K Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic Collector-Emitter Breakdown Voltage (Note 6) Collector Cut-off Current Emitter Cut-off Current Symbol BVCEO ICBO IEBO Static Forward Current Transfer Ratio (Note 6) hFE Base-Emitter Turn-On Voltage (Note 6) Delay Time Rise Time Storage Time Fall Time Storage Time Fall Time Notes: Min 150 60 100 - VBE(on) t(d) t(r) t(s) t(f) t(s) t(f) Typ 175 - Max 50 50 - - - - 0.71 512 426 3413 321 65 294 0.95 - Unit V nA nA V ns ns ns ns ns ns Test Condition IC = 10mA VCB = 150V VEB = 7V IC = 85mA, VCE = 0.20V IC = 150mA, VCE = 0.25V IC = 150mA, VCE = 0.25V VCC = 120V, IC = 150mA, -IB2 = 1.5mA, VCE(ON) = 0.25V VCC = 120V, IC = 150mA, -IB2 = 1.5mA, VCE(ON) = 4V 6. Measured under pulsed conditions. Pulse width = 300µs. Duty cycle ≤ 2% Typical Characteristics 1.0 VCE=0.25V 600 500 400 -55°C 25°C 0.8 85°C VBE(on) (V) Typical Gain (hFE) 700 VCE=0.25V 125°C 25°C 300 200 -55°C 0.6 125°C 0.4 100 85°C 0 100µ 1m 10m 100m 0.2 100µ 1 IC Collector Current (A) 1m 10m 100m 1 IC Collector Current (A) hFE v IC VBE(on) v IC 30 f = 1MHz Capacitance (pF) 25 20 15 10 Cobo 5 0 100m 1 10 100 Voltage(V) Capacitance v Voltage ZXTN4004K Document Number: DS35458 Rev: 1 - 2 3 of 5 www.diodes.com December 2011 © Diodes Incorporated A Product Line of Diodes Incorporated ZXTN4004K Package Outline Dimensions E TO252 Dim Min Max Typ A 2.19 2.39 2.29 A1 0.00 0.13 0.08 A2 0.97 1.17 1.07 b 0.64 0.88 0.783 b2 0.76 1.14 0.95 b3 5.21 5.46 5.33 c2 0.45 0.58 0.531 D 6.00 6.20 6.10 D1 5.21 − − e 2.286 − − E 6.45 6.70 6.58 E1 4.32 − − H 9.40 10.41 9.91 L 1.40 1.78 1.59 L3 0.88 1.27 1.08 L4 0.64 1.02 0.83 a 0° 10° − All Dimensions in mm A b3 c2 L3 A2 D E1 H L4 A1 L e 2X b2 3X b a Suggested Pad Layout X2 Y2 C Y1 X1 ZXTN4004K Document Number: DS35458 Rev: 1 - 2 Z Dimensions Z X1 X2 Y1 Y2 C E1 Value (in mm) 11.6 1.5 7.0 2.5 7.0 6.9 2.3 E1 4 of 5 www.diodes.com December 2011 © Diodes Incorporated A Product Line of Diodes Incorporated ZXTN4004K IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2011, Diodes Incorporated www.diodes.com ZXTN4004K Document Number: DS35458 Rev: 1 - 2 5 of 5 www.diodes.com December 2011 © Diodes Incorporated