DIODES ZXTP2012GTC

ZXTP2012G
60V PNP MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223
SUMMARY
BVCEO = -60V : RSAT = 39m ; IC = -5.5A
DESCRIPTION
Packaged in the SOT223 outline this new low saturation 60V PNP transistor
offers extremely low on state losses making it ideal for use in DC-DC circuits
and various driving and power management functions.
FEATURES
• Extremely low equivalent on-resistance; RSAT = 39mV at 5A
SOT223
• 5.5 amps continuous current
• Up to 15 amps peak current
• Very low saturation voltages
• Excellent gain characteristics specified up to 10 Amps
APPLICATIONS
• DC - DC converters
• MOSFET gate drivers
• Charging circuits
• Power switches
• Motor control
PINOUT
ORDERING INFORMATION
DEVICE
ZXTP2012GTA
ZXTP2012GTC
REEL
SIZE
7”
13”
TAPE
WIDTH
QUANTITY PER
REEL
12mm
1,000 units
embossed
4,000 units
DEVICE MARKING
TOP VIEW
ZXTP
2012
ISSUE 1 - JUNE 2005
1
SEMICONDUCTORS
ZXTP2012G
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
LIMIT
UNIT
Collector-base voltage
BV CBO
-100
V
Collector-emitter voltage
BV CEO
-60
V
Emitter-base voltage
BV EBO
-7
V
Continuous collector current
IC
-5.5
A
Peak pulse current
Power dissipation at T A =25°C (a)
I CM
-15
A
PD
3.0
W
Linear derating factor
Power dissipation at T A =25°C (b)
Linear derating factor
24
mW/°C
PD
1.6
W
12.8
mW/°C
Operating and storage temperature range
T j , T stg
-55 to +150
°C
THERMAL RESISTANCE
PARAMETER
Junction to ambient
SYMBOL
(a)
R ⍜JA
VALUE
UNIT
42
°C/W
NOTES
(a) For a device surface mounted on 52mm x 52mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions.
(b) For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
ISSUE 1 - JUNE 2005
SEMICONDUCTORS
2
ZXTP2012G
CHARACTERISTICS
ISSUE 1 - JUNE 2005
3
SEMICONDUCTORS
ZXTP2012G
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated)
PARAMETER
SYMBOL
MIN.
TYP.
Collector-base breakdown voltage
BV CBO
-100
-120
Collector-emitter breakdown voltage
BV CER
-100
-120
V
I C =-1␮A, RBⱕ1k⍀
Collector-emitter breakdown voltage
BV CEO
-60
-80
V
I C =-10mA*
Emitter-base breakdown voltage
BV EBO
-7
-8.1
Collector cut-off current
I CBO
Collector cut-off current
⬍1
⬍1
I CER
R ⱕ 1k⍀
MAX. UNIT CONDITIONS
V
I C =-100␮A
V
I E =-100␮A
-20
nA
V CB =-80V
-0.5
␮A
VCB=-80V,Tamb=100⬚C
-20
nA
V CB =-80V
-0.5
␮A
VCB=-80V,Tamb=100⬚C
V EB =-6V
Emitter cut-off current
I EBO
⬍1
-10
nA
Collector-emitter saturation voltage
V CE(SAT)
-15
-25
mV
I C =-0.1A, I B =-10mA*
-55
-70
mV
IC=-1A, IB=-100mA*
-90
-120
mV
IC=-2A, IB=-200mA*
-195
-250
mV
IC=-5A, IB=-500mA*
Base-emitter saturation voltage
V BE(SAT)
-1030
-1150
mV
I C =-5A, I B =-500mA*
Base-emitter turn-on voltage
V BE(ON)
-920
-1020
mV
I C =-5A, V CE =-1V*
Static forward current transfer ratio
H FE
100
250
100
200
45
90
IC=-5A, VCE=-1V*
10
25
IC=-10A, VCE=-1V*
120
I C =-10mA, V CE =-1V*
IC=-2A, VCE=-1V*
300
MHz I C =-100mA, V CE =-10V
Transition frequency
fT
Output capacitance
C OBO
48
pF
Switching times
t ON
39
ns
t OFF
370
f=50MHz
V CB =-10V, f=1MHz*
I C =1A, V CC =10V,
I B1 =I B2 =100mA
* Measured under pulsed conditions. Pulse width ⱕ 300␮s; duty cycle ⱕ2%.
ISSUE 1 - JUNE 2005
SEMICONDUCTORS
4
ZXTP2012G
TYPICAL CHARACTERISTICS
ISSUE 1 - JUNE 2005
5
SEMICONDUCTORS
ZXTP2012G
PACKAGE OUTLINE
PAD LAYOUT DETAILS
Controlling dimensions are in millimeters. Approximate conversions are given in inches
PACKAGE DIMENSIONS
Millimeters
Inches
DIM
Millimeters
Inches
DIM
Min
Max
Min
Max
Min
Max
Min
Max
A
-
1.80
-
0.071
e
2.30 BSC
0.0905 BSC
A1
0.02
0.10
0.0008
0.004
e1
4.60 BSC
0.181 BSC
b
0.66
0.84
0.026
0.033
E
b2
2.90
3.10
0.114
0.122
C
0.23
0.33
0.009
0.013
D
6.30
6.70
0.248
0.264
6.70
7.30
0.264
0.287
E1
3.30
3.70
0.130
0.146
L
0.90
-
0.355
-
-
-
-
-
-
© Zetex Semiconductors plc 2005
Europe
Americas
Asia Pacific
Corporate Headquarters
Zetex GmbH
Streitfeldstraße 19
D-81673 München
Germany
Zetex Inc
700 Veterans Memorial Hwy
Hauppauge, NY 11788
USA
Zetex (Asia) Ltd
3701-04 Metroplaza Tower 1
Hing Fong Road, Kwai Fong
Hong Kong
Zetex Semiconductors plc
Zetex Technology Park
Chadderton, Oldham, OL9 9LL
United Kingdom
Telefon: (49) 89 45 49 49 0
Fax: (49) 89 45 49 49 49
[email protected]
Telephone: (1) 631 360 2222
Fax: (1) 631 360 8222
[email protected]
Telephone: (852) 26100 611
Fax: (852) 24250 494
[email protected]
Telephone (44) 161 622 4444
Fax: (44) 161 622 4446
[email protected]
These offices are supported by agents and distributors in major countries world-wide.
This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced
for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company
reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service.
For the latest product information, log on to www.zetex.com
ISSUE 1 - JUNE 2005
SEMICONDUCTORS
6