DIODES ZXTP2008Z

ZXTP2008Z
30V PNP LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89
SUMMARY
BVCEO = -30V : RSAT = 24m ; IC = -5.5A
DESCRIPTION
Packaged in the SOT89 outline this new low saturation
30V PNP transistor offers low on state losses making it
ideal for use in DC-DC circuits, line switching and
various driving and power management functions.
SOT89
FEATURES
• 5.5 amps continuous current
• Up to 20 amps peak current
• Very low saturation voltages
• Exceptional gain linearity down to 10mA
• Excellent high current gain hold up
APPLICATIONS
• DC - DC converters
• MOSFET gate drivers
• Charging circuits
• Power switches
• Motor control
PINOUT
ORDERING INFORMATION
DEVICE
REEL
SIZE
TAPE WIDTH
QUANTITY PER
REEL
7"
12mm
embossed
1000 units
ZXTP2008ZTA
DEVICE MARKING
TOP VIEW
949
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ZXTP2008Z
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
LIMIT
UNIT
Collector-base voltage
BV CBO
-50
V
Collector-emitter voltage
BV CEO
-30
V
BV EBO
-7
V
Emitter-base voltage
(a)
IC
-5.5
A
Peak pulse current
I CM
-20
A
Power dissipation at T A =25°C (a)
PD
1.5
W
12
mW/°C
Continuous collector current
Linear derating factor
Power dissipation at T A =25°C (b)
PD
Linear derating factor
Operating and storage temperature range
T j , T stg
2.1
W
16.8
mW/°C
-55 to 150
°C
THERMAL RESISTANCE
PARAMETER
SYMBOL
VALUE
UNIT
Junction to Ambient (a)
R ⍜JA
83
°C/W
(b)
R ⍜JA
60
°C/W
Junction to Ambient
NOTES
(a) For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
(b) For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
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CHARACTERISTICS
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ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated)
PARAMETER
SYMBOL
MIN.
TYP.
Collector-base breakdown voltage
MAX.
UNIT
CONDITIONS
BV CBO
-50
-70
V
I C = -100␮A
Collector-emitter breakdown voltage BV CER
-50
-70
V
I C = -1␮A, RB <1k⍀
Collector-emitter breakdown voltage BV CEO
-30
-40
V
I C = -10mA *
Emitter-base breakdown voltage
BV EBO
-7.0
-8.0
V
I E = -100␮A
Collector cut-off current
I CBO
-20
nA
V CB = -40V
-0.5
␮A
V CB = -40V,T amb =100°C
-20
nA
V CB = -40V
-0.5
␮A
V CB = -40V,T amb =100°C
Collector cut-off current
<-1
<-1
I CER
R <1k⍀
Emitter cut-off current
I EBO
<-1
-10
nA
V EB = -6V
Collector-emitter saturation voltage
V CE(SAT)
-25
-40
mV
-35
-55
mV
I C = -0.5A, I B = -20mA *
I C = -1A, I B = -100mA *
-55
-80
mV
I C = -1A, I B = -20mA *
-55
-80
mV
I C = -2A, I B = -200mA *
-130
-175
mV
I C = -5.5A, I B =-500mA *
-970
-1070
mV
I C = -5.5A, IB = -500mA *
-960
mV
I C = -5.5A, V CE = -1V *
Base-emitter saturation voltage
V BE(SAT)
Base-emitter turn-on voltage
V BE(ON)
Static forward current transfer ratio
h FE
-860
100
225
100
200
70
145
10
20
I C = -10mA, V CE = -1V *
I C = -1A, V CE = -1V *
300
I C = -5A, V CE = -1V *
I C = -20A, V CE = -1V *
Transition frequency
fT
110
MHz
I C = -100mA, V CE = -10V
f = 50MHz
Output capacitance
C OBO
83
pF
V CB = -10V, f = 1MHz *
t ON
43
ns
t OFF
230
Switching times
I C = -1A, V CC = -10V,
I B1 = -I B2 = -100mA
NOTES
* Measured under pulsed conditions. Pulse width ⱕ 300␮s; duty cycle ⱕ 2%.
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TYPICAL CHARACTERISTICS
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PACKAGE OUTLINE
PAD LAYOUT DETAILS
Controlling dimensions are in millimeters. Approximate conversions are given in inches
PACKAGE DIMENSIONS
Millimeters
Inches
DIM
Millimeters
Inches
DIM
Min
Max
Min
Max
Min
Max
Min
Max
A
1.40
1.60
0.550
0.630
e
1.40
1.50
0.055
0.059
b
0.38
0.48
0.015
0.019
E
3.75
4.25
0.150
0.167
b1
-
0.53
-
0.021
E1
-
2.60
-
0.102
b2
1.50
c
0.28
1.80
0.060
0.071
G
2.90
3.00
0.114
0.118
0.44
0.011
0.017
H
2.60
2.85
0.102
0.112
D
4.40
4.60
0.173
0.181
-
-
-
-
-
© Zetex Semiconductors plc 2005
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