ZXTP2025F 50V, SOT23, PNP medium power transistor Summary V(BR)CEO > -50V IC(cont) = -5A RCE(sat) = 30m⍀ typical VCE(sat) < - 60mV @ -1A PD = 1.2W Complementary part number: ZXTN2031F Description Advanced process capability and package design have been used to maximize the power handling and performance of this small outline transistor. The compact size and ratings of this device make it ideally suited to applications where space is at a premium. Features • Higher power dissipation SOT23 package • High peak current • Low saturation voltage • High gain • 50V forward blocking voltage Applications • MOSFET and IGBT gate driving • Motor drive • Relay, lamp and solenoid drive • High side switches • DC-DC converters Pinout - top view Ordering information Device Reel size (inches) Tape width (mm) Quantity per reel 7 8 3,000 ZXTP2025FTA Device marking 312 Issue 3 - January 2006 © Zetex Semiconductors plc 2006 1 www.zetex.com ZXTP2025F Absolute maximum ratings Parameter Symbol Limit Unit Collector-base voltage VCBO -50 V Collector-emitter voltage VCEO -50 V Emitter-base voltage VEBO -7.0 V Peak pulse current ICM -10 A Continuous collector current (c) IC -5 A Base current IB -1.2 A Power dissipation @ TA=25°C (a) Linear derating factor PD 1.0 W 8.0 mW/°C Power dissipation @ TA=25°C (b) Linear derating factor PD Power dissipation @ TA=25°C (c) Linear derating factor PD Operating and storage temperature Tj:Tstg 1.2 W 9.6 mW/°C 1.56 W 12.5 mW/°C -55 to +150 °C Thermal resistance Parameter Symbol Value Unit Junction to ambient (a) RθJA 125 °C/W Junction to ambient (b) RθJA 104 °C/W Junction to ambient (c) RθJA 80 °C/W NOTES: (a) Mounted on 18mm x 18mm x 1.6mm FR4 PCB with a very high coverage of 2 oz weight copper in still air conditions. (b) Mounted on 30mm x 30mm x 1.6mm FR4 PCB with a very high coverage of 2 oz weight copper in still air conditions. (c) As (b) above measured at t<5secs. Issue 3 - January 2006 © Zetex Semiconductors plc 2006 2 www.zetex.com ZXTP2025F Characteristics Issue 3 - January 2006 © Zetex Semiconductors plc 2006 3 www.zetex.com ZXTP2025F Electrical characteristics (at Tamb = 25°C unless otherwise stated) Parameter Symbol Min. Typ. Collector-base breakdown voltage V(BR)CBO -50 Collector-emitter breakdown voltage V(BR)CEO Emitter-base breakdown voltage V(BR)EBO Collector-emitter cut-off current ICEV Collector-base cut-off current Unit Conditions 100 V IC=-100µA -50 70 V IC=-10mA (a) -7.0 8.5 V IE=-100µA -20 nA VCE=-40V, VBE = 1V ICBO -20 nA VCB=-40V Emitter-base cut-off current IEBO -10 nA VEB=-6V Static forward current transfer ratio HFE Collector-emitter saturation voltage Max. 180 380 200 350 70 120 Ic=-5A, VCE=-2V(a) 12 30 Ic=-10A, VCE=-2V(a) VCE(sat) IC=-10mA, VCE=-2V(a) IC=-500mA, VCE=-2V(a) 560 -11 -20 mV IC=-100mA, IB=-10mA(a) -40 -60 mV IC=-1A, IB=-100mA(a) -150 -230 mV IC=-2A, IB=-40mA(a) -150 -200 mV IC=-5A, IB=-500mA(a) -0.81 -0.88 V IC=-2A, IB=-40mA(a) -0.95 -1.05 V IC=-5A, IB=-500mA(a) -0.82 -0.92 V IC=-5A, VCE=-2V(a) Base-emitter saturation voltage VBE(sat) Base-emitter turn-on voltage VBE(on) Transition frequency fT 190 MHz Output capacitance Cobo 42 pF Delay time t(d) 14 ns Rise time t(r) 23 ns VCC=-12V, IC=-2.5A, Storage time t(stg) 240 ns IB1=IB2=-125mA Fall time t(f) 30 ns Ic=-500mA, VCE=-10V, f=50MHz VCB=-10V, f=1MHz NOTES: (a) Measured under pulsed conditions. Pulse width=300S. Duty cycle ⱕ2%. Issue 3 - January 2006 © Zetex Semiconductors plc 2006 4 www.zetex.com ZXTP2025F Typical characteristics Issue 3 - January 2006 © Zetex Semiconductors plc 2006 5 www.zetex.com ZXTP2025F Packaging details - SOT23 L H N G D 3 leads M A B C K Dim. F Millimeters Inches Min. Max. Min. Max. A 2.67 3.05 0.105 0.120 B 1.20 1.40 0.047 C - 1.10 D 0.37 F 0.085 G Dim. Millimeters Inches Min. Max. Max. Max. H 0.33 0.51 0.013 0.020 0.055 K 0.01 0.10 0.0004 0.004 - 0.043 L 2.10 2.50 0.083 0.0985 0.53 0.015 0.021 M 0.45 0.64 0.018 0.025 0.15 0.0034 0.0059 N 0.95 NOM - - 1.90 NOM 0.075 NOM 0.0375 NOM - - - Note: Controlling dimensions are in millimeters. Approximate dimensions are provided in inches Europe Americas Asia Pacific Corporate Headquarters Zetex GmbH Streitfeldstraße 19 D-81673 München Germany Zetex Inc 700 Veterans Memorial Highway Hauppauge, NY 11788 USA Zetex (Asia Ltd) 3701-04 Metroplaza Tower 1 Hing Fong Road, Kwai Fong Hong Kong Zetex Semiconductors plc Zetex Technology Park, Chadderton Oldham, OL9 9LL United Kingdom Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 [email protected] Telephone: (1) 631 360 2222 Fax: (1) 631 360 8222 [email protected] Telephone: (852) 26100 611 Fax: (852) 24250 494 [email protected] Telephone: (44) 161 622 4444 Fax: (44) 161 622 4446 [email protected] For international sales offices visit www.zetex.com/offices Zetex products are distributed worldwide. For details, see www.zetex.com/salesnetwork This publication is issued to provide outline information only which (unless agreed by the company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contact or be regarded as a representation relating to the products or services concerned. The company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. Issue 3 - January 2006 © Zetex Semiconductors plc 2006 6 www.zetex.com