DIODES ZXTP25060BFHTA

ZXTP25060BFH
60V, SOT23, PNP medium power transistor
Summary
BV(BR)CEX > -100V, BV(BR)CEO > -60V
BV(BR)ECO > -7V ;
IC(cont) = -3A;
RCE(sat) = 58 m⍀ typical;
VCE(sat) < -85mV @ -1A ;
PD = 1.25W
Complementary part number ZXTN25060BFH
Description
C
Advanced process capability and package design have been used to
maximize the power handling and performance of this small outline
transistor. The compact size and ratings of this device make it ideally
suited to applications where space is at a premium.
B
Features
•
Higher power dissipation SOT23 package
•
High peak current
•
Low saturation voltage
•
100V forward blocking voltage
•
7V reverse blocking voltage
E
E
C
Applications
•
MOSFET gate drivers
•
Power switches
•
Motor control
B
Pinout - top view
Ordering information
Device
ZXTP25060BFHTA
Reel size
(inches)
Tape width
Quantity per reel
7
8mm
3,000
Device marking
028
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ZXTP25060BFH
Absolute maximum ratings
Parameter
Symbol
Limit
Unit
Collector-base voltage
VCBO
-100
V
Collector-emitter voltage (forward blocking)
VCEX
-100
V
Collector-emitter voltage
VCEO
-60
V
Emitter-collector voltage (reverse blocking)
VECO
-7
V
Emitter-base voltage
VEBO
-7
V
IC
-3
A
Peak pulse current
ICM
-9
A
Power dissipation at TA =25°C (a)
Linear derating factor
PD
0.73
5.84
W
mW/°C
Power dissipation at TA =25°C (b)
Linear derating factor
PD
1.05
8.4
W
mW/°C
Power dissipation at TA =25°C (c)
Linear derating factor
PD
1.25
9.6
W
mW/°C
Power dissipation at TA =25°C (d)
Linear derating factor
PD
1.81
14.5
W
mW/°C
Tj, Tstg
-55 to 150
°C
Symbol
Limit
Unit
Junction to ambient (a)
R⍜JA
171
°C/W
Junction to ambient (b)
R⍜JA
119
°C/W
Junction to ambient (c)
R⍜JA
100
°C/W
Junction to ambient (d)
R⍜JA
69
°C/W
Continuous collector current (a)
Operating and storage temperature range
Thermal resistance
Parameter
NOTES:
(a) For a device surface mounted on 15mm x 15mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in
still air conditions.
(b) Mounted on 25mm x 25mm x 1.6mm FR4 PCB with a high coverage of single sided 2 oz copper in still air conditions.
(c) Mounted on 50mm x 50mm x 1.6mm FR4 PCB with a high coverage of single sided 2 oz copper in still air conditions.
(d) As (c) above measured at t<5secs
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ZXTP25060BFH
Characteristics
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Electrical characteristics (at TAMB = 25°C unless otherwise stated)
Parameter
Symbol
Min.
Typ.
Collector-base breakdown BVCBO
voltage
-100
Collector-emitter
breakdown voltage
(forward blocking)
BVCEX,
Collector-emitter
breakdown voltage (base
open)
Max.
Unit
Conditions
-120
V
IC = -100mA
-100
-120
V
IC = -100mA,
RBE < 1k⍀ or
-0.25V < VBE < 1V
BVCEO
-60
-80
V
IC = -10mA (*)
Emitter-collector
breakdown voltage
(reverse blocking)
BVECO
-7
-8.6
V
IE = -100uA (*)
Emitter-base breakdown
voltage
BVEBO
-7
-8.1
V
IE = -100␮A
Collector cut-off current
ICBO
<-1
-50
-20
nA
␮A
VCB = -80V
VCB = -80V, TAMB= 100°C
Collector emitter cut-off
current
ICEX
-
-100
nA
VCE = -80V;
RBE < 1k⍀ or
-0.25V < VBE < 1V
Emitter cut-off current
IEBO
<-1
-50
nA
VEB = -5.6V
Collector-emitter
saturation voltage
VCE(sat)
-45
-55
mV
IC = -0.5A, IB = -50mA (*)
-100
-135
mV
IC = -0.5A, IB = -10mA (*)
-70
-85
mV
IC = -1A, IB = -100mA (*)
-175
-235
mV
IC = -3A, IB = -300mA (*)
Base-emitter saturation
voltage
VBE(sat)
-940
-1040
mV
IC = -3A, IB = -300mA (*)
Base-emitter turn-on
voltage
VBE(on)
-830
-930
mV
IC = -3A, VCE = -2V (*)
Static forward current
transfer ratio
hFE
100
200
300
75
150
IC = -1A, VCE = -2V (*)
30
60
IC = -3A, VCE = -2V (*)
Transition frequency
fT
250
Output capacitance
COBO
17.6
Turn-on time
t(on)
Turn-off time
t(off)
IC = -10mA, VCE = -2V (*)
MHz
IC = -100mA, VCE = -5V
f = 100MHz
pF
VCB = -10V, f = 1MHz (*)
26.5
ns
291
ns
VCC = -10V. IC = -500mA,
IB1 = IB2= -50mA.
30
NOTES:
(*) Measured under pulsed conditions. Pulse width ⱕ300␮s; duty cycle ⱕ2%.
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ZXTP25060BFH
Typical characteristics
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ZXTP25060BFH
Package outline - SOT23
E
e
e1
b
3 leads
L1
D
E1
A
A1
Dim.
L
c
Millimeters
Inches
Dim.
Millimeters
Min.
Max.
Min.
Max.
A
-
1.12
-
0.044
e1
A1
0.01
0.10
0.0004
0.004
E
2.10
2.64
0.083
0.104
b
0.30
0.50
0.012
0.020
E1
1.20
1.40
0.047
0.055
c
0.085
0.20
0.003
0.008
L
0.25
0.60
0.0098
0.0236
D
2.80
3.04
0.110
0.120
L1
0.45
0.62
0.018
0.024
-
-
-
-
-
e
0.95 NOM
Min.
0.037 NOM
Max.
Inches
1.90 NOM
Min.
Max.
0.075 NOM
Note: Controlling dimensions are in millimeters. Approximate dimensions are provided in inches
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ZXTP25060BFH
Intentionally left blank
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ZXTP25060BFH
Definitions
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Future device intended for production at some point. Samples may be available
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Product status recommended for new designs
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may change in any manner without notice.
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This term denotes a pre-release datasheet. It provides a clear indication of anticipated performance.
However, changes to the test conditions and specifications may occur, at any time and without notice.
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© 2008 Published by Zetex Semiconductors plc
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