ZXTP5401G 150V, SOT223, PNP High voltage transistor Summary BVCEO > -150V BVEBO > -5V IC(cont) = -600mA PD = 2W Complementary part number ZXTN5551G Description C A high voltage PNP transistor in a surface mount package Features • 150V rating • SOT223 package B E Applications • E High voltage amplification C Ordering information Device Reel size (inches) Tape width (mm) Quantity per reel ZXTP5401GTA 7 12 1000 ZXTP5401GTC 13 12 4000 C B Pinout - top view Device marking ZXTP 5401 Issue 1 - August 2007 © Zetex Semiconductors plc 2007 1 www.zetex.com ZXTP5401G Absolute maximum ratings Parameter Symbol Limit Unit Collector-base voltage VCBO -160 V Collector-emitter voltage VCEO -150 V Emitter-base voltage VEBO -5 V Continuous collector current(a) IC -600 mA Peak collector current IC -2 A Power dissipation at TA =25°C(a) PD 2 W 16 mW/°C Tj, Tstg -55 to 150 °C Symbol Limit Unit R⍜JA 62.5 °C/W Linear derating factor Operating and storage temperature range Thermal resistance Parameter Junction to ambient(a) NOTES: (a) For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 1oz weight copper, in still air conditions. Issue 1 - August 2007 © Zetex Semiconductors plc 2007 2 www.zetex.com ZXTP5401G Typical characteristics Issue 1 - August 2007 © Zetex Semiconductors plc 2007 3 www.zetex.com ZXTP5401G Electrical characteristics (at Tamb = 25°C unless otherwise stated) Parameter Symbol Min. Typ. Collector-base breakdown voltage BVCBO -160 -270 V IC = -100A, Collector-emitter breakdown voltage (base open) BVCEO -150 -240 V IC = -1mA * Emitter-base breakdown voltage BVEBO -5 -8.1 V IE = -10A Collector cut-off current ICBO Collector-emitter saturation voltage VCE(sat) Base-emitter saturation voltage VBE(sat) Static forward current transfer hFE ratio Transition frequency fT Output capacitance COBO Delay time t(d) Rise time <-1 Max. Unit Conditions -50 nA VCB = -120V -50 A VCB = -120V, Tamb= 100°C -50 -200 mV IC = -10mA, IB = -1mA * -70 -500 mV IC = -50mA, IB = -5mA * -700 -1000 mV IC = -10mA, IB = -1mA * -750 -1000 mV IC = -50mA, IB = -5mA * 50 135 IC = -1mA, VCE = -5V * 60 135 50 130 IC = -50mA, VCE = -5V * 100 MHz IC = -10mA, VCE = -10V f = 100MHz IC = -10mA, VCE = -5V * 240 pF VCB = -10V, f = 1MHz * 386 ns t(r) 202 ns VCC = -50V. IC = -100mA, IB1 = IB2= -10mA. Storage time t(s) 1720 ns Fall time t(f) 275 ns Issue 1 - August 2007 © Zetex Semiconductors plc 2007 6 4 www.zetex.com ZXTP5401G Characteristics -0.8 VCE(sat) - (Volts) IC/IB=10 -0.6 -0.4 -0.2 0 -0.0001 -0.001 -0.01 -0.1 -1 IC - Collector Current (Amps) VCE(sat) v IC -1.4 80 -1.2 VCE=-10V 60 VBE(sat) - (Volts) hFE - Normalised Gain (%) 100 40 20 IC/IB=10 -1.0 -0.8 -0.6 0 -0.0001 -0.001 -0.01 -0.1 -0.0001 1 -0.001 -0.01 -0.1 IC - Collector Current (Amps) IC - Collector Current (Amps) hFE v IC VBE(sat) v IC -1 -1.4 VBE - (Volts) -1.2 VCE=-10V -1.0 -0.8 -0.6 -0.0001 -0.001 -0.01 -0.1 -1 IC - Collector Current (Amps) VBE(on) v IC Issue 1 - August 2007 © Zetex Semiconductors plc 2007 5 www.zetex.com ZXTP5401G Intentionally left blank Issue 1 - August 2007 © Zetex Semiconductors plc 2007 6 www.zetex.com ZXTP5401G Package outline - SOT223 Dim. Millimeters Inches Dim. Millimeters Inches Min. Max. Min. Max. Min. Max. Min. Max. A - 1.80 - 0.071 D 6.30 6.70 0.248 0.264 A1 0.02 0.10 0.0008 0.004 e 2.30 BSC 0.0905 BSC A2 1.55 1.65 0.0610 0.0649 e1 4.60 BSC 0.181 BSC b 0.66 0.84 0.026 0.033 E 6.70 7.30 0.264 0.287 b2 2.90 3.10 0.114 0.122 E1 3.30 3.70 0.130 0.146 C 0.23 0.33 0.009 0.013 L 0.90 - 0.355 - Note: Controlling dimensions are in millimeters. Approximate dimensions are provided in inches Issue 1 - August 2007 © Zetex Semiconductors plc 2007 7 www.zetex.com ZXTP5401G Definitions Product change Zetex Semiconductors reserves the right to alter, without notice, specifications, design, price or conditions of supply of any product or service. Customers are solely responsible for obtaining the latest relevant information before placing orders. Applications disclaimer The circuits in this design/application note are offered as design ideas. It is the responsibility of the user to ensure that the circuit is fit for the user’s application and meets with the user’s requirements. 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Life support devices or systems are devices or systems which: 1. are intended to implant into the body or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Reproduction The product specifications contained in this publication are issued to provide outline information only which (unless agreed by the company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. 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Samples may be available “Active” Product status recommended for new designs “Last time buy (LTB)” Device will be discontinued and last time buy period and delivery is in effect “Not recommended for new designs” Device is still in production to support existing designs and production “Obsolete” Production has been discontinued Datasheet status key: “Draft version” This term denotes a very early datasheet version and contains highly provisional information, which may change in any manner without notice. “Provisional version” This term denotes a pre-release datasheet. It provides a clear indication of anticipated performance. However, changes to the test conditions and specifications may occur, at any time and without notice. “Issue” This term denotes an issued datasheet containing finalized specifications. However, changes to specifications may occur, at any time and without notice. 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