UNISONIC TECHNOLOGIES CO., LTD 4N60 Power MOSFET 4 Amps, 600/650 Volts N-CHANNEL POWER MOSFET 1 TO-220 DESCRIPTION The UTC 4N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits. 1 1 TO-220F FEATURES * RDS(ON) = 2.5Ω @VGS = 10 V * Ultra Low Gate Charge ( typical 15 nC ) * Low Reverse Transfer CAPACITANCE ( CRSS = typical 8.0 pF ) * Fast Switching Capability * Avalanche Energy Specified * Improved dv/dt Capability, high Ruggedness TO-220F1 1 1 TO-251 TO-252 SYMBOL 1 2.Drain 1 TO-263 TO-262 1.Gate 3.Source ORDERING INFORMATION Ordering Number Lead Free Halogen Free 4N60L-x-TA3-T 4N60G-x-TA3-T 4N60L-x-TF1-T 4N60G-x-TF1-T 4N60L-x-TF3-T 4N60G-x-TF3-T 4N60L-x-TM3-T 4N60G-x-TM3-T 4N60L-x-TN3-R 4N60G-x-TN3-R 4N60L-x-T2Q-T 4N60G-x-T2Q-T 4N60L-x-TQ3-R 4N60G-x-TQ3-R 4N60L-x-TQ3-T 4N60G-x-TQ3-T Note: Pin Assignment: G: Gate D: Drain S: Source www.unisonic.com.tw Copyright © 2010 Unisonic Technologies Co., Ltd Package TO-220 TO-220F1 TO-220F TO-251 TO-252 TO-262 TO-263 TO-263 Pin Assignment 1 2 3 G D S G D S G D S G D S G D S G D S G D S G D S Packing Tube Tube Tube Tube Tape Reel Tube Tape Reel Tube 1 of 8 QW-R502-061, N 4N60 Power MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25°С, unless otherwise specified) PARAMETER 4N60-A Drain-Source Voltage 4N60-B Gate-Source Voltage Avalanche Current (Note 2) Continuous Drain Current Pulsed (Note 2) RATINGS UNIT 600 V VDSS 650 V VGSS ±30 V IAR 4.4 A ID 4.0 A 16 A IDM 4N60 260 mJ Single Pulsed (Note 3) EAS Avalanche Energy 4N60-E 200 mJ Repetitive (Note 2) EAR 10.6 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt 4.5 V/ns TO-220/TO-262/TO-263 106 W TO-220F/TO-220F1 36 W Power Dissipation PD TO-251 50 W TO-252 50 W Junction Temperature TJ +150 °С Operating Temperature TOPR -55 ~ +150 °С Storage Temperature TSTG -55 ~ +150 °С Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating : Pulse width limited by maximum junction temperature 3. L = 30mH, IAS = 4A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C 4. ISD≤4.4A, di/dt ≤200A/μs, VDD≤BVDSS, Starting TJ = 25°C THERMAL DATA PARAMETER Junction to Ambient Junction to Case SYMBOL PACKAGE TO-220/TO-262/TO-263 TO-220F/TO-220F1 TO-251 TO-252 TO-220/TO-262/TO-263 TO-220F/TO-220F1 TO-251 TO-252 SYMBOL θJA θJc RATINGS 62.5 62.5 83 83 1.18 3.47 2.5 2.5 UNIT °С/W °С/W °С/W °С/W °С/W °С/W °С/W °С/W ELECTRICAL CHARACTERISTICS (TC =25°С, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage SYMBOL 4N60-A 4N60-B Drain-Source Leakage Current Gate-Source Leakage Current Forward Reverse Breakdown Voltage Temperature Coefficient ON CHARACTERISTICS Gate Threshold Voltage Static Drain-Source On-State Resistance DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance BVDSS VGS = 0 V, ID = 250 μA IDSS VDS = 600 V, VGS = 0 V VGS = 30 V, VDS = 0 V VGS = -30 V, VDS = 0 V IGSS MIN TYP MAX UNIT 600 650 10 100 -100 △BVDSS/△TJ ID = 250 μA, Referenced to 25°C VGS(TH) RDS(ON) CISS COSS CRSS UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw TEST CONDITIONS VDS = VGS, ID = 250 μA VGS = 10 V, ID = 2.2 A VDS = 25 V, VGS = 0 V, f = 1MHz 0.6 2.0 520 70 8 V V μA nA nA V/°С 4.0 2.5 V Ω 670 90 11 pF pF pF 2 of 8 QW-R502-061,N 4N60 Power MOSFET ELECTRICAL CHARACTERISTICS(Cont.) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX SWITCHING CHARACTERISTICS Turn-On Delay Time tD(ON) 13 35 VDD = 300V, ID = 4.0A, RG = 25Ω Turn-On Rise Time tR 45 100 (Note 1, 2) Turn-Off Delay Time tD(OFF) 25 60 Turn-Off Fall Time tF 35 80 Total Gate Charge QG 15 20 VDS= 480V,ID= 4.0A, VGS= 10 V Gate-Source Charge QGS 3.4 (Note 1, 2) Gate-Drain Charge QGD 7.1 SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Drain-Source Diode Forward Voltage VSD VGS = 0 V, IS = 4.4 A 1.4 Maximum Continuous Drain-Source Diode IS 4.4 Forward Current Maximum Pulsed Drain-Source Diode ISM 17.6 Forward Current VGS = 0 V, IS = 4.4 A, Reverse Recovery Time tRR 250 dIF/dt = 100 A/μs (Note 1) 1.5 Reverse Recovery Charge QRR Notes: 1. Pulse Test: Pulse width≤300μs, Duty cycle≤2% 2. Essentially independent of operating temperature UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw UNIT ns ns ns ns nC nC nC V A A ns μC 3 of 8 QW-R502-061,N 4N60 Power MOSFET TEST CIRCUITS AND WAVEFORMS + D.U.T. VDS + - L RG Driver Same Type as D.U.T. VGS VDD * dv/dt controlled by RG * ISD controlled by pulse period * D.U.T.-Device Under Test Fig. 1A Peak Diode Recovery dv/dt Test Circuit VGS (Driver) Period D= P.W. P. W. Period VGS= 10V IFM, Body Diode Forward Current ISD (D.U.T.) di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt VDS (D.U.T.) VDD Body Diode Forward Voltage Drop Fig. 1B Peak Diode Recovery dv/dt Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 8 QW-R502-061,N 4N60 Power MOSFET TEST CIRCUITS AND WAVEFORMS (Cont.) Fig. 2A Switching Test Circuit Fig. 2B Switching Waveforms Fig. 3A Gate Charge Test Circuit Fig. 3B Gate Charge Waveform L VDS BVDSS IAS RD 10V VDD D.U.T. ID(t) VDS(t) VDD tp tp Fig. 4A Unclamped Inductive Switching Test Circuit UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Time Fig. 4B Unclamped Inductive Switching Waveforms 5 of 8 QW-R502-061,N 4N60 TYPICAL CHARACTERISTICS Breakdown Voltage Variation vs. Temperature On-Resistance Junction Temperature 3.0 Drain-Source On-Resistance, RDS(ON) (Normalized) (Ω) 1.2 Drain-Source Breakdown Voltage, BVDSS (Normalized) (V) Power MOSFET 1.1 1.0 0.9 Note: 1. VGS=0V 2. ID=250µA 0.8 -50 -100 0 100 50 150 200 2.5 2.0 1.5 1.0 Note: 1. VGS=10V 2. ID=4A 0.5 0.0 -100 Junction Temperature, TJ (°С) VGS 10V 9V 8V 7V 6V 5.5V 5 V Bottorm:5.0V 100 150 200 Transfer Characteristics 10 Top: 25°С 1 5.0V 150°С 1 0.1 Notes: 1. 250µs Pulse Test 2. TC=25°С 0.1 50 Junction Temperature, TJ (°С) On-State Characteristics 10 0 -50 1 10 Drain-to-Source Voltage, VDS (V) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Notes: 1. VDS=50V 2. 250µs Pulse Test 0.1 2 4 6 8 10 Gate-Source Voltage, VGS (V) 6 of 8 QW-R502-061,N 4N60 Capacitance (pF) Gate-Source Voltage, VGS (V) TYPICAL CHARACTERISTICS(Cont.) PD (w) Thermal Response, θJC (t) Power MOSFET UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 7 of 8 QW-R502-061,N 4N60 TYPICAL CHARACTERISTICS(Cont.) Drain Current, ID (A) Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 8 of 8 QW-R502-061,N