GaAlAs HIGH POWER T-1 3/4 PACKAGE INFRARED EMITTING DIODE Description MIE-544L3 Package Dimensions φ5.05 (.200) The MIE-544L3 is an infrared emitting diode in GaAlAs Unit : mm (inches ) on GaAlAs technology molded in water clear plastic package. 5.47 (.215) 7.62 (.300) 5.90 (.230) 1.00 (.040) FLAT DENOTES CATHODE 23.40 MIN. (.920) Features 0.50 TYP. (.020) l High radiant power and high radiant intesity l Suitable for DC and high pulse current operation l Standard T-1 3/4 (φ 5mm) package l Peak wavelength λP =880 nm l Good spectral matching to Si-Photodetecto l Radiant angle : 40° 1.00MIN (.040) 2.54 (.100) A C Notes : 1. Tolerance is ± 0.25 mm (.010") unless otherwise noted. 2. Protruded resin under flange is 1.5 mm (.059") max. 3. Lead spacing is measured where the leads emerge from the package. Absolute Maximum Ratings '@ TA=25oC Parameter Power Dissipation Peak Forward Current(300pps,10µs pulse) Continuos Forward Current Reverse Voltage Maximum Rating Unit 120 mW 1 A 100 mA 5 V o o o o Operating Temperature Range -55 C to +100 C Storage Temperature Range -55 C to +100 C Lead Soldering Temperature 260oC for 5 seconds Unity Opto Technology Co., Ltd. 11/17/2000 MIE-544L3 Optical-Electrical Characteristics @ TA=25oC Parameter Test Conditions Symbol Min. Typ . Max. Unit Radiant Intensity IF=20mA Ie 1.8 Forward Voltage IF=50mA VF 1.4 Reverse Current VR=5V IR Peak Wavelength IF=20mA λ 880 nm Spectral Bandwidth IF=20mA ∆λ 80 nm View Angle IF=20mA 2 θ1/2 40 deg . mW/sr 1.7 V 100 µA Typical Optical-Electrical Characteristic Curves Forward Current I F (mA) Relative Radiant Intensity 1 0.5 0 780 880 100 90 80 70 60 50 0 -55 980 80 60 40 20 0 0 1.2 1.6 2.0 2.4 2.8 Output Power To Value IF=20mA Forward Current (mA) 100 Forward Voltage (V) FIG.3 FORWARD CURRENT VS. FORWARD VOLTAGE 0 25 50 75 3 2.5 2 1.5 1 0.5 0 -40 -20 0 20 4 3 2 1 0 0 20 40 60 80 100 Forward Current (mA) FIG.5 RELATIVE RADIANT INTENSITY VS. FORWARD CURRENT 40 60 o 0° 10° 5 100 125 Ambient Temperature TA ( C) FIG.4 RELATIVE RADIANT INTENSITY VS. AMBIENT TEMPERATURE Relative Radiant Intensity Output Power Relative To Value at I F=20mA -25 Ambient Temperature TA (oC) FIG.2 FORWARD CURRENT VS. AMBIENT TEMPERATURE Wavelength (nm) FIG.1 SPECTRAL DISTRIBUTION 20° 30° 40° 50° 60° 70° 80° 90° 1.0 0.9 0.8 0.5 0.3 0.1 0.2 0.4 0.6 FIG.6 RADIATION DIAGRAM Unity Opto Technology Co., Ltd. 11/17/2000