74AUP1G09 SINGLE 2 INPUT POSITIVE AND GATE WITH OPEN DRAIN OUTPUT Description Pin Assignments The Advanced Ultra Low Power (AUP) CMOS logic family is designed for low power and extended battery life in portable applications. The AUP1G09 is a single AND gate with an open drain output designed for operation over a power supply range of 0.8V to 3.6V. The device is fully specified for partial power down applications using IOFF. The IOFF circuitry disables the output preventing damaging current backflow when the device is powered down. The gate performs the positive Boolean function: Y = A •B or Y = A+B Features • Advanced Ultra Low Power (AUP) CMOS • Supply Voltage Range from 0.8V to 3.6V • 4mA Output Drive at 3.0V • Low Static power consumption • • Icc < 0.9µA Low Dynamic Power Consumption CPD = 6 pF (Typical at 3.6V) Schmitt Trigger Action at All Inputs Make the Circuit Tolerant for Slower Input Rise and Fall Time. typically 250 mV at VCC = 3.0V The hysteresis is • IOFF Supports Partial-Power-Down Mode Operation • ESD Protection Exceeds JESD 22 2000-V Human Body Model (A114-A) Applications Exceeds 1000-V Charged Device Model (C101C) • Suited for battery and low power needs • Latch-Up Exceeds 100mA per JESD 78, Class II • Range of Package Options SOT353, DFN1410, and DFN1010 • Tablets, E-readers Leadless packages per JESD30E Cell Phones, Personal Navigation / GPS • Wide array of products such as: DFN1010 denoted as X2-DFN1010-6 MP3 players ,Cameras, Video Recorders DFN1014 denoted as X2-DFN1014-6 PCs ultrabooks, notebooks, netbooks, • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Computer peripherals, hard drives, CD/DVD ROM Halogen and Antimony Free. “Green” Device (Note 3) TV, DVD, DVR, set top box Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. Click here for ordering information, located at the end of datasheet 74AUP1G09 Document number: DS35151 Rev. 1- 2 1 of 11 www.diodes.com August 2012 © Diodes Incorporated 74AUP1G09 Pin Descriptions Pin Name A B GND Y VCC Function Data Input Data Input Ground Data Output Supply Voltage Logic Diagram Function Table Inputs A L L H H B L H L H 74AUP1G09 Document number: DS35151 Rev. 1- 2 Output Y L L L Z 2 of 11 www.diodes.com August 2012 © Diodes Incorporated 74AUP1G09 Absolute Maximum Ratings (Note 4) (@TA = +25°C, unless otherwise specified.) Symbol ESD HBM ESD CDM Parameter Human Body Model ESD Protection Charged Device Model ESD Protection Rating 2 1 Unit KV KV V Supply Voltage Range -0.5 to +4.6 VI Input Voltage Range -0.5 to +4.6 V Vo Voltage applied to output in high or low state -0.5 to VCC +0.5 V IIK Input Clamp Current VI < 0 50 mA IOK Output Clamp Current (VO < 0 ) 50 mA IO Continuous Output Current (VO = 0 to VCC) ICC Continuous Current Through VCC VCC Continuous Current Through GND IGND TJ TSTG Note: ±20 mA 50 mA -50 mA Operating Junction Temperature -40 to +150 °C Storage Temperature -65 to +150 °C 4. Stresses beyond the absolute maximum may result in immediate failure or reduced reliability. These are stress values and device operation should be within recommend values. Recommended Operating Conditions (Note 5) (@TA = +25°C, unless otherwise specified.) Symbol VCC Parameter Operating Voltage VI Input Voltage VO Output Voltage Min Max 0.8 3.6 V 0 3.6 V 0 VCC V 20 µA VCC = 0.8V IOL Δt/ΔV TA Note: Low-Level Output Current Input Transition Rise or Fall Rate Operating Free-Air Temperature VCC = 1.1V 1.1 VCC = 1.4V 1.7 VCC = 1.65V 1.9 VCC = 2.3V 3.1 VCC = 3.0V 4 VCC = 0.8V to 3.6V -40 Unit mA 200 ns/V 125 °C 5. Unused inputs should be held at VCC or Ground. 74AUP1G09 Document number: DS35151 Rev. 1- 2 3 of 11 www.diodes.com August 2012 © Diodes Incorporated 74AUP1G09 Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Symbol Parameter Test Conditions VCC Min TA = +25°C Max TA = -40°C to 85°C Min Max 0.8V to 1.65V 0.80 X VCC 0.80 X VCC 0.65 X VCC 1.6 2.0 0.65 X VCC 1.6 2.0 VIH High-Level Input Voltage 1.65V to 1.95V 0.8V to 1.65V 0.30 X VCC 0.30 X VCC VIL Low-Level input voltage 1.65V to 1.95V 0.35 X VCC 0.7 0.9 0.35 X VCC 0.7 0.9 VOL 2.3V to 2.7V 3.0V to 3.6V 2.3V to 2.7V 3.0V to 3.6V 0.8V to 3.6V 0.1 0.1 IOL = 1.1mA 1.1V 0.3 X VCC 0.3 X VCC IOZ ΔIOFF ICC ΔICC V IOL = 1.7mA 1.4V 0.31 0.37 IOL = 1.9mA 1.65V 0.31 0.35 0.31 0.33 0.44 0.45 0.31 0.33 0.44 0.45 0V to 3.6V ± 0.1 ± 0.5 μA 0 ± 0.2 ± 0.5 μA 3.6V ± 0.2 ± 0.5 μA VI or VO = 0V to 3.6V 0V to 0.2V 0.2 0.6 μA Supply Current VI = GND or VCC IO = 0 0.8V to 3.6V 0.5 0.9 μA Additional Supply Current Input at VCC -0.6V 3.3V 40 50 μA High-Level Input Voltage IOL = 2.3mA IOL = 2.7mA IOFF V IOL = 20μA IOL = 3.1mA II Unit Input Current Power Down Leakage Current Z State Leakage Current Delta Power Down Leakage Current IOL = 4mA A or B Input VI = GND to 3.6V VI or VO = 0V to 3.6V VO = 3.6V Vi = 3.6V 74AUP1G09 Document number: DS35151 Rev. 1- 2 2.3V 3V 4 of 11 www.diodes.com V August 2012 © Diodes Incorporated 74AUP1G09 Electrical Characteristics (cont.) (@TA = +25°C, unless otherwise specified.) Symbol Parameter Test Conditions VCC TA = -40°C to +125°C Min Max 0.8V to 1.65V 0.80 X VCC 0.70 X VCC 1.6 2.0 VIH High-Level Input Voltage 1.65V to 1.95V 0.8V to 1.65V 0.25X VCC VIL Low-Level Input Voltage 1.65V to 1.95V 0.35 X VCC 0.7 0.9 VOL High-Level Input Voltage 2.3V to 2.7V 3.0V to 3.6V 2.3V to 2.7V 3.0V to 3.6V 0.8V to 3.6V 0.11 IOL = 1.1 mA 1.1V 0.3 X VCC IOL = 1.7 mA 1.4V 0.41 IOL = 1.9 mA 1.65V 0.39 IOL = 3.1 mA IOL = 2.7 mA II Input Current IOL = 4 mA A or B Input VI = GND to 3.6V IOFF Power Down Leakage Current VI or VO = 0V to 3.6V IOZ Z State Leakage Current VO = 3.6V Vi = 3.6V Delta Power Down Leakage Current VI or VO = 0V to 3.6V Supply Current VI = GND or VCC, IO = 0 Additional Supply Current Input at VCC -0.6V ΔIOFF ICC ΔICC 74AUP1G09 Document number: DS35151 Rev. 1- 2 V IOL = 20 μA IOL = 2.3 mA 2.3V 3V Unit 0.36 V V 0.50 0.36 0.50 0V to 3.6V ± 0.75 μA 0 ± 3.5 μA 3.6V ± 1.5 μA 0V to 0.2V ± 2.5 μA 0.8V to 3.6V 3.0 μA 3.3V 75 μA 5 of 11 www.diodes.com August 2012 © Diodes Incorporated 74AUP1G09 Switching Characteristics CL=5pF see Figure 1 Parameter tpd From Input A TO OUTPUT VCC Y 0.8V 1.2V ± 0.1V 1.5V ± 0.1V 1.8V ± 0.15V 2.5V ± 0.2V 3.3V ± 0.3V TO OUTPUT VCC Y 0.8V 1.2V ± 0.1V 1.5V ± 0.1V 1.8V ± 0.15V 2.5V ± 0.2V 3.3V ± 0.3V TO OUTPUT VCC Y 0.8V 1.2V ± 0.1V 1.5V ± 0.1V 1.8V ± 0.15V 2.5V ± 0.2V 3.3V ± 0.3V TO OUTPUT VCC Y 0.8V 1.2V ± 0.1V 1.5V ± 0.1V 1.8V ± 0.15V 2.5V ± 0.2V 3.3V ± 0.3V Min 1.9 1.5 1.2 1.0 0.9 TA = +25°C Typ Max 13.5 4.6 10.4 3.3 6.5 2.9 5.1 2.4 4.4 2.3 4.0 TA = -40°C to +85°C Min Max TA = +25°C Typ Max 16.3 5.6 12.3 4.1 7.6 3.2 7.3 2.9 6.1 2.9 5.7 TA = -40°C to +85°C Min Max TA = +25°C Typ Max 19.0 7.6 14.2 6.5 12.1 5.5 9.6 4.6 8.1 4.1 7.5 TA = -40°C to +85°C Min Max TA = +25°C Typ 27 9.5 8.5 7.7 7 6.5 TA = -40°C to +85°C Min Max 1.8 1.4 1.1 0.9 0.8 11.4 7.4 5.9 4.6 4.5 TA = -40°C to +125°C Min Max 1.8 1.4 1.1 0.9 0.8 12.6 8.2 6.5 4.9 4.9 Unit ns CL=10pF see Figure 1 Parameter tpd From Input A Min 2.3 1.8 1.6 1.4 1.3 2.1 1.7 1.4 1.2 1.1 13.7 8.8 7.1 6.4 5.4 TA = -40°C to +125°C Min Max 2.1 1.7 1.4 1.2 1.1 15.1 9.7 7.0 5.9 5.9 Unit ns CL=15pF see Figure 1 Parameter tpd From Input A Min 2.6 2.1 1.9 1.6 1.6 2.4 1.9 1.7 1.5 1.4 15.8 12.7 10.1 9.1 8.3 TA = -40°C to +125°C Min Max 2.4 1.9 1.7 1.5 1.4 17.4 12.9 10.3 9.3 9.1 Unit ns CL=30pF see Figure 1 Parameter tpd From Input A 74AUP1G09 Document number: DS35151 Rev. 1- 2 Min 3.6 2.9 2.6 2.4 2.3 Max 19.5 16.1 15.2 13.1 12.7 6 of 11 www.diodes.com 3.2 2.6 2.3 2.1 2.1 21.8 13.6 13.3 13.3 12.9 TA = -40°C to +125°C Min Max 3.2 2.6 2.3 2.1 2.1 24 15 14.6 13.5 12.9 Unit ns August 2012 © Diodes Incorporated 74AUP1G09 Operating and Package Characteristics (@TA = +25°C, unless otherwise specified.) Parameter Test Conditions Input Capacitance Ci θJA Thermal Resistance Junctionto-Ambient θJC Thermal Resistance Junctionto-Case Notes: f = 1MHz No Load Power Dissipation Capacitance Cpd VCC 0.8V 1.2V ± 0.1V 1.5V ± 0.1V 1.8V ± 0.15V 2.5V ± 0.2V 3.3V ± 0.3V 0V or 3.3V Vi = VCC or GND SOT353 (Note 6) X2-DFN1410-6 X2-DFN1010-6 SOT353 (Note 6 X2-DFN1410-6 X2-DFN1010-6 Typ Unit 2.6 2.8 2.9 3.1 3.6 4.2 pF 1.5 pF 371 430 445 143 190 250 °C/W °C/W 6. Test condition for SOT353, X2-DFN1410-6, and X2-DFN1010-6 devices mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. Parameter Measurement Information VCC Inputs VI TEST S1 tPLZ/tPZL Vload RL 5KΩ VM VLOAD CL V∆ VCC/2 2 X VCC 5, 10, 15, 30pF 0.1V 0.1V 0.8V VCC tr/tf ≤3ns 1.2V±0.1V VCC ≤3ns VCC/2 2 X VCC 5, 10, 15, 30pF 1.5V±0.1V VCC ≤3ns VCC/2 2 X VCC 5, 10, 15, 30pF 0.1V 1.8V±0.15V VCC ≤3ns VCC/2 2 X VCC 5, 10, 15, 30pF 0.15V 2.5V±0.2V VCC ≤3ns VCC/2 2 X VCC 5, 10, 15, 30pF 0.15V 3.3V±0.3 V VCC ≤3ns VCC/2 2 X VCC 5, 10, 15, 30pF 0.3V Voltage Waveform Pulse Duration Voltage Waveform Enable and Disable Times Low and High Level Enabling Figure 1. Load Circuit and Voltage Waveforms Notes: A. Includes test lead and test apparatus capacitance. B. All pulses are supplied at pulse repetition rate ≤ 10 MHz. C. Inputs are measured separately one transition per measurement. D. For the open drain device the specified propagation delay tPD is the same as tPLZ and tPZL. 74AUP1G09 Document number: DS35151 Rev. 1- 2 7 of 11 www.diodes.com August 2012 © Diodes Incorporated 74AUP1G09 Ordering Information 74 AUP1G 09 XX - 7 Function Logic Device Package 74 : Logic Prefix 09 : 2- Input AND - Gate AUP : 0.8 V to 3.6 V With Open Drain Logic Family 1G : One gate Part Number Package Code Packaging 74AUP1G09SE-7 74AUP1G09FZ4-7 74AUP1G09FW4-7 SE FZ4 FW4 SOT353 X2-DFN1410-6 X2-DFN1010-6 Packing 7 : Tape & Reel SE : SOT353 FZ4 : X2-DFN1410-6 FW4 : X2-DFN1010-6 7” Tape and Reel Quantity Part Number Suffix 3000/Tape & Reel -7 5000/Tape & Reel -7 5000/Tape & Reel -7 Marking Information (1) SOT353 (Top View) 4 7 5 XX : Identification code Y : Year 0~9 W : Week : A~Z : 1~26 week; a~z : 27~52 week; z represents 52 and 53 week X : A~Z : Internal code XX Y W X 1 2 3 Part Number 74AUP1G09SE Package SOT353 Identification Code XR (2) X2-DFN1410-6 and X2-DFN1010-6 (Top View) XX YWX Part Number 74AUP1G09FZ4 74AUP1G09FW4 74AUP1G09 Document number: DS35151 Rev. 1- 2 XX : Identification Code Y : Year : 0~9 W : Week : A~Z : 1~26 week; a~z : 27~52 week; z represents 52 and 53 week X : A~Z : Internal code Package X2-DFN1410-6 X2-DFN1010-6 8 of 11 www.diodes.com Identification Code XR XR August 2012 © Diodes Incorporated 74AUP1G09 Package Outline Dimensions (All dimensions in mm.) Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version. (1) SOT353 A SOT353 Dim Min Max Typ A 0.10 0.30 0.25 B 1.15 1.35 1.30 C 2.00 2.20 2.10 D 0.65 Typ F 0.40 0.45 0.425 H 1.80 2.20 2.15 J 0 0.10 0.05 K 0.90 1.00 1.00 L 0.25 0.40 0.30 M 0.10 0.22 0.11 0° 8° α All Dimensions in mm B C H K M J D L F (2) X2-DFN1410-6 A1 A3 A Seating Plane D e (Pin #1 ID) L(6x) E Z1(4x) Z(4x) 74AUP1G09 Document number: DS35151 Rev. 1- 2 X2-DFN1410-6 Dim Min Max Typ 0.39 A –– 0.40 0.02 A1 0.00 0.05 0.13 A3 –– –– b 0.15 0.25 0.20 D 1.35 1.45 1.40 E 0.95 1.05 1.00 0.50 e –– –– L 0.25 0.35 0.30 –– –– 0.10 Z Z1 0.045 0.105 0.075 All Dimensions in mm b(6x) 9 of 11 www.diodes.com August 2012 © Diodes Incorporated 74AUP1G09 Package Outline Dimensions (cont.) (All dimensions in mm.) Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version. (3) X2-DFN1010-6 A1 A X2-DFN1010-6 Dim Min Max Typ A –– 0.40 0.39 A1 0.00 0.05 0.02 A3 –– –– 0.13 b 0.14 0.20 0.17 b1 0.05 0.15 0.10 D 0.95 1.05 1.00 E 0.95 1.05 1.00 e –– –– 0.35 L 0.35 0.45 0.40 K 0.15 –– –– Z –– –– 0.065 All Dimensions in mm A3 D (Pin #1 ID) e b1 E K L(6x) b(6x) Z(4x) Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version (1) SOT353 C2 Z C2 Dimensions Value (in mm) Z 2.5 G 1.3 X 0.42 Y 0.6 C1 1.9 C2 0.65 C1 G Y X (2) X2-DFN1410-6 X1 C Dimensions Y(6x) C G X X1 Y Y1 Y1 1 74AUP1G09 Document number: DS35151 Rev. 1- 2 G(4x) Value (in mm) 0.500 0.250 0.250 1.250 0.525 1.250 X(6x) 10 of 11 www.diodes.com August 2012 © Diodes Incorporated 74AUP1G09 Suggested Pad Layout (cont.) Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. (3) X2-DFN1010-6 X1 C Dimensions Y (6x) C G X X1 Y Y1 Y1 1 G(4x) Value (in mm) 0.350 0.150 0.200 0.900 0.550 1.250 X(6x) IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. 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