MIMIX 8SDV0500

2.0-16.0 GHz GaAs MMIC
Frequency Divider
May 2005 - Rev 05-May-05
8SDV0500
Features
Chip Device Layout
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Divide-by-Four
+5.0 dBm Output Power
-30 dBc Fundamental Leakage
Single-ended or Differential Input & Output
100% On-Wafer, DC and Output Power Testing
100% Visual Inspection to MIL-STD-883
Method 2010
Absolute Maximum Ratings
Supply Voltage (Vcc)
Supply Current (Icc)
Input Power (Pin)
Storage Temperature (Tstg)
Operating Temperature (Ta)
Junction Temperature (Tch)
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Mimix Broadband's 2.0-16.0 GHz GaAs MMIC freqency
divider is an ECL (Emitter Coupled Logic) static frequency
divider (divide-by-four) consisting of two cascaded divideby-two circuits. Even-order harmonic levels are minimized by
driving the inputs with a balanced input signal, and by
taking the output differentially, but the circuit can be
operated in a single-ended fashion with unused inputs &
outputs open circuit. This MMIC uses Mimix Broadband's 2
um GaAs HBT device model technology to ensure high
reliability and uniformity. The chip has surface passivation to
protect and provide a rugged part with backside via holes
and gold metallization to allow either a conductive epoxy or
eutectic solder die attach process. This device is well suited
for Millimeter-wave Point-to-Point Radio, LMDS, SATCOM and
VSAT applications.
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General Description
+7.0 VDC
150 mA
+15 dBm
-65 to +165 OC
-55 to MTTF Table1
MTTF Table1
(1) Junction temperature affects a device's MTTF. It is
recommended to keep channel temperature as low as
possible for maximum life.
Electrical Characteristics (Ambient Temperature T = 25 oC)
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Parameter
Pr
Input Frequency Range (f )
Output Frequency Range (f )
Input Power (Pin)
Output Power (Pout)
Fin Suppression
Fin/2 Suppression
3*Fin/4 Suppression
2*Fin Suppression
Supply Voltage (Vcc)
Supply Current (Icc) (Vcc=5.0V Typical)
Units
GHz
GHz
dBm
dBm
dBc
dBc
dBc
dBc
VDC
mA
Min.
2.0
0.5
-20.0
+4.0
-
Typ.
+5.0
-30.0
-25.0
-15.0
-35.0
+5.0
110
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Max.
16.0
4.0
+5.0
+6.0
130
Page 1 of 5
Characteristic Data and Specifications are subject to change without notice. ©2005 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
2.0-16.0 GHz GaAs MMIC
Frequency Divider
May 2005 - Rev 05-May-05
8SDV0500
Divider Measurements
Output Power vs. Input Frequency
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10
6
Pin -20dBm
Pin -10dBm
Pin -5dBm
Pin 0dBm
Pin +5dBm
4
2
0
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Pout divide-by-four (dBm)
8
-2
-4
0
2
4
od
-6
6
8
10
12
14
16
Input Frequency (GHz)
pr
Output Harmonics & Sub-harmonics vs. Input Frequency
0
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-20
-30
Fin
Fin/2
3*Fin/4
2*Fin
Pr
Pharm (dBc)
-10
-40
-50
-60
0
2
4
6
8
10
12
14
16
Input Frequency (GHz)
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 2 of 5
Characteristic Data and Specifications are subject to change without notice. ©2005 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
2.0-16.0 GHz GaAs MMIC
Frequency Divider
May 2005 - Rev 05-May-05
8SDV0500
Mechanical Drawing
0.850
(0.033)
2
3
0.525
(0.021)
0.325
(0.013)
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0.525
(0.021)
0.325
(0.013)
1
4
5
0.0
0.795
(0.031)
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0.0
2.000
(0.079)
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(Note: Engineering designator is 8SDV0500)
Units: millimeters (inches) Bond pad dimensions are shown to center of bond pad.
Thickness: 0.110 +/- 0.010 (0.0043 +/- 0.0004), Backside is ground, Bond Pad/Backside Metallization: Gold
All Bond Pads are 0.100 x 0.100 (0.004 x 0.004).
Bond pad centers are approximately 0.109 (0.004) from the edge of the chip.
Dicing tolerance: +/- 0.005 (+/- 0.0002). Approximate weight: 1.054 mg.
RF Out2
1
Bond Pad #5 (Vcc)
Bypass Capacitors - See App Note [2]
3 RF In1
Pr
2
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Bias Arrangement
RF Out1
Bond Pad #3 (RF In1)
Bond Pad #4 (RF In2)
pr
Bond Pad #1 (RF Out2)
Bond Pad #2 (RF Out1)
4 RF In2
5
Vcc
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 3 of 5
Characteristic Data and Specifications are subject to change without notice. ©2005 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
2.0-16.0 GHz GaAs MMIC
Frequency Divider
May 2005 - Rev 05-May-05
8SDV0500
App Note [1] Biasing - As shown in the bonding diagram, this device is operated by biasing Vcc with Vcc=5.0 V and Icc=100 mA.
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App Note [2] Bias Arrangement - Each DC pad (Vcc) needs to have DC bypass capacitance. (~100 - 200 pF) as close to the device as
possible. RF In and RF Out can be single-ended or differential, as required.
MTTF Table
Backplate
Temperature
MTTF Hours
FITs
55 deg Celsius
2.21E+09
4.52E-01
75 deg Celsius
1.46E+08
8.50E-01
95 deg Celsius
1.33E+07
7.51E+01
Pr
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pr
od
Functional Diagram
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These numbers were calculated based on accelerated life test information and thermal model analysis received from the fabricating foundry.
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 4 of 5
Characteristic Data and Specifications are subject to change without notice. ©2005 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
2.0-16.0 GHz GaAs MMIC
Frequency Divider
May 2005 - Rev 05-May-05
8SDV0500
Handling and Assembly Information
CAUTION! - Mimix Broadband MMIC Products contain gallium arsenide (GaAs) which can be hazardous to the
human body and the environment. For safety, observe the following procedures:
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Do not ingest.
Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical
processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed.
Observe government laws and company regulations when discarding this product. This product must be
discarded in accordance with methods specified by applicable hazardous waste procedures.
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Life Support Policy - Mimix Broadband's products are not authorized for use as critical components in life support
devices or systems without the express written approval of the President and General Counsel of Mimix
Broadband. As used herein: (1) Life support devices or systems are devices or systems which, (a) are intended for
surgical implant into the body, or (b) support or sustain life, and whose failure to perform when properly used in
accordance with instructions for use provided in the labeling, can be reasonably expected to result in a
significant injury to the user. (2) A critical component is any component of a life support device or system whose
failure to perform can be reasonably expected to cause the failure of the life support device or system, or to
affect its safety or effectiveness.
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ESD - Gallium Arsenide (GaAs) devices are susceptible to electrostatic and mechanical damage. Die are supplied
in antistatic containers, which should be opened in cleanroom conditions at an appropriately grounded antistatic workstation. Devices need careful handling using correctly designed collets, vacuum pickups or, with care,
sharp tweezers.
Pr
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pr
Die Attachment - GaAs Products from Mimix Broadband are 0.100 mm (0.004") thick and have vias through to the
backside to enable grounding to the circuit. Microstrip substrates should be brought as close to the die as
possible. The mounting surface should be clean and flat. If using conductive epoxy, recommended epoxies are
Ablestick 84-1LMI or 84-1LMIT cured in a nitrogen atmosphere per manufacturer's cure schedule. Apply epoxy
sparingly to avoid getting any on to the top surface of the die. An epoxy fillet should be visible around the total
die periphery. If eutectic mounting is preferred, then a fluxless gold-tin (AuSn) preform, approximately 0.001 2
thick, placed between the die and the attachment surface should be used. A die bonder that utilizes a heated
collet and provides scrubbing action to ensure total wetting to prevent void formation in a nitrogen atmosphere
is recommended. The gold-tin eutectic (80% Au 20% Sn) has a melting point of approximately 280 C (Note: Gold
Germanium should be avoided). The work station temperature should be 310 C +- 10 C. Exposure to these
extreme temperatures should be kept to minimum. The collet should be heated, and the die pre-heated to avoid
excessive thermal shock. Avoidance of air bridges and force impact are critical during placement.
Wire Bonding - Windows in the surface passivation above the bond pads are provided to allow wire bonding to
the die's gold bond pads. The recommended wire bonding procedure uses 0.076 mm x 0.013 mm (0.003" x
0.0005") 99.99% pure gold ribbon with 0.5-2% elongation to minimize RF port bond inductance. Gold 0.025 mm
(0.001") diameter wedge or ball bonds are acceptable for DC Bias connections. Aluminum wire should be
avoided. Thermo-compression bonding is recommended though thermosonic bonding may be used providing
the ultrasonic content of the bond is minimized. Bond force, time and ultrasonics are all critical parameters.
Bonds should be made from the bond pads on the die to the package or substrate. All bonds should be as short
as possible.
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 5 of 5
Characteristic Data and Specifications are subject to change without notice. ©2005 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.