UTC-IC 9N100

UNISONIC TECHNOLOGIES CO., LTD
9N100
Preliminary
Power MOSFET
9A, 1000V N-CHANNEL
POWER MOSFET
„
DESCRIPTION
The UTC 9N100 is an N-channel mode power MOSFET using
UTC’s advanced technology to provide costumers with planar stripe
and DMOS technology. This technology allows a minimum on-state
resistance and superior switching performance. It also can withstand
high energy pulse in the avalanche and commutation mode.
The UTC 9N100 is generally applied in high efficiency switch
mode power supplies.
„
FEATURES
* RDS(ON)=1.7Ω @ VGS=10V
* Fast Switching Speed
* 100% Avalanche Tested
* Improved dv/dt Capability
„
SYMBOL
2.Drain
1.Gate
3.Source
„
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
9N100L-T47-T
9N100G-T47-T
Note: Pin Assignment: G: Gate D: Drain
S: Source
www.unisonic.com.tw
Copyright © 2012 Unisonic Technologies Co., Ltd
Package
TO-247
Pin Assignment
1
2
3
G
D
S
Packing
Tube
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9N100
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Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
RATINGS
UNIT
Drain to Source Voltage
VDSS
1000
V
Gate to Source Voltage
VGSS
±30
V
Continuous Drain Current (TC=25°C)
ID
9
A
Pulsed Drain Current (Note 1)
IDM
36
A
Avalanche Current (Note 1)
IAR
9
A
Single Pulsed Avalanche Energy (Note 2)
EAS
850
mJ
Peak Diode Recovery dv/dt (Note 3)
dv/dt
4.0
V/ns
Power Dissipation (TC=25°C)
160
W
PD
Linear Derating Factor above TC=25°C
1.28
W/°C
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55~+150
°C
Note: 1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L=27mH, IAS=9A, VDD= 50V, RG=25Ω, Starting TJ=25°C
3. ISD ≤9A, di/dt ≤200A/μs, VDD ≤BVDSS, Starting TJ=25°C
4. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
„
THERMAL DATA
PARAMETER
Junction to Ambient
Junction to Case
„
SYMBOL
θJA
θJC
RATINGS
50
0.78
UNIT
°C/W
°C/W
ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Drain-Source Leakage Current
Gate-Source Leakage Current
ON CHARACTERISTICS
Gate Threshold Voltage
Drain-Source On-State Resistance
DYNAMIC PARAMETERS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SYMBOL
MIN
BVDSS
VGS=0V, ID=250µA
1000
ΔBVDSS/ΔTJ ID=250μA, Referenced to 25°C
VDS=1000V, VGS=0V
IDSS
VDS=800V, TC=125°C
IGSS
VDS=0V ,VGS=±30V
VGS(TH)
RDS(ON)
CISS
COSS
CRSS
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
TEST CONDITIONS
VDS=VGS, ID=250µA
VGS=10V, ID=4A
VDS=25V, VGS=0V, f=1.0MHz
3.0
TYP MAX UNIT
1.4
V
V/°C
10
µA
100
µA
±100 nA
5.0
1200 1700
V
mΩ
2475 3220
195 255
16
24
pF
pF
pF
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Preliminary
Power MOSFET
ELECTRICAL CHARACTERISTICS(Cont.)
PARAMETER
SYMBOL
TEST CONDITIONS
SWITCHING PARAMETERS (Note 1, Note 2)
Total Gate Charge
QG
Gate-Source Charge
QGS
VDS=800V, VGS=10V, ID=8A
Gate-Drain Charge
QGD
Turn-ON Delay Time
tD(ON)
Turn-ON Rise Time
tR
VDD=500V, ID=8A, RG=25Ω
Turn-OFF Delay Time
tD(OFF)
Turn-OFF Fall Time
tF
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
IS
Maximum Body-Diode Pulsed Current
ISM
Drain-Source Diode Forward Voltage
VSD
IS =9A, VGS=0V
Note: 1. Pulse Test: Pulse width ≤ 300μs, Duty cycle ≤ 2%
2. Essentially independent of operating temperature
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
MIN
TYP MAX UNIT
53
13
23
50
95
122
80
70
110
200
254
170
nC
nC
nC
ns
ns
ns
ns
9
36
1.4
A
A
V
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Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
Peak Diode Recovery dv/dt Test Circuit & Waveforms
+
DUT
VDS
RG
L
ISD
VGS
VDD
Driver
Same Type
as DUT
dv/dt controlled by RG
ISD controlled by pulse period
VGS
(Driver)
D=
Gate Pulse Width
Gate Pulse Period
10V
IFM, Body Diode Forward Current
ISD
(DUT)
di/dt
IRM
Body Diode Reverse Current
VDS
(DUT)
Body Diode Recovery dv/dt
VSD
VDD
Body Diode Forward
Voltage Drop
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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9N100
„
Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS(Cont.)
VGS
Same Type
as DUT
12V
QG
10V
200nF
50kΩ
VDS
300nF
QGS
QGD
VGS
DUT
3mA
Charge
Gate Charge Test Circuit
Gate Charge Waveforms
2
EAS= 1
2 LIAS
VDS
RG
BVDSS
BVDSS-VDD
BVDSS
ID
L
IAS
10V
ID(t)
DUT
tP
VDD
Unclamped Inductive Switching Test Circuit
VDD
VDS(t)
Time
tP
Unclamped Inductive Switching Waveforms
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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