UNISONIC TECHNOLOGIES CO., LTD 5N50 Preliminary Power MOSFET 5A, 500V N-CHANNEL POWER MOSFET 1 DESCRIPTION The UTC 5N50 is an N-channel power MOSFET adopting UTC’s advanced technology to provide customers with DMOS, planar stripe technology. This technology is designed to meet the requirements of the minimum on-state resistance and perfect switching performance. It also can withstand high energy pulse in the avalanche and communication mode. The UTC 5N50 can be used in applications, such as active power factor correction, high efficiency switched mode power supplies, electronic lamp ballasts based on half bridge topology. TO-220F 1 TO-262 1 FEATURES TO-252 * RDS(ON) = 1.4Ω @VGS = 10 V * 100% avalanche tested * High switching speed SYMBOL 2.Drain 1.Gate 3.Source ORDERING INFORMATION Ordering Number Lead Free Halogen Free 5N50L-TF3-T 5N50G-TF3-T 5N50L-TN3-R 5N50G-TN3-R 5N50L-T2Q-T 5N50G-T2Q-T Note: Pin Assignment: G: Gate D: Drain S: Source www.unisonic.com.tw Copyright © 2011 Unisonic Technologies Co., Ltd Package TO-220F TO-252 TO-262 Pin Assignment 1 2 3 G D S G D S G D S Packing Tube Tape Reel Tube 1 of 6 QW-R502-476.e 5N50 Preliminary Power MOSFET ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 500 V Gate-Source Voltage VGSS ±30 V 5 A Continuous ID Drain Current Pulsed (Note 2) IDM 20 A Avalanche Current (Note 2) IAR 5 A 300 mJ Single Pulsed (Note 3) EAS Avalanche Energy Repetitive (Note 2) EAR 7.3 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt 4.5 V/ns TO-220F 38 W Power Dissipation TO-252 PD 54 W TO-262 125 W Junction Temperature TJ +150 °C Storage Temperature TSTG -55~+150 °C Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating: Pulse width limited by maximum junction temperature 3. L = 21.5mH, IAS = 5A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C 4. ISD ≤5A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C THERMAL DATA PARAMETER Junction to Ambient Junction to Case SYMBOL TO-220F TO-252 TO-262 TO-220F TO-252 TO-262 θJA θJC UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw RATINGS 62.5 110 62.5 3.25 2.13 1 UNIT °C/W °C/W °C/W °C/W °C/W °C/W 2 of 6 QW-R502-476.e 5N50 Preliminary Power MOSFET ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS ID=250µA, VGS=0V Breakdown Voltage Temperature Coefficient △BVDSS/△TJ Reference to 25°C, ID=250µA VDS=500V, VGS=0V Drain-Source Leakage Current IDSS VDS=400V, TC=125°C Forward VGS=30V, VDS=0V Gate- Source Leakage Current IGSS Reverse VGS=-30V, VDS=0V ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS=VGS, ID=250µA Static Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=2.5A DYNAMIC PARAMETERS Input Capacitance CISS VGS=0V, VDS=25V, Output Capacitance COSS f=1.0MHz Reverse Transfer Capacitance CRSS SWITCHING PARAMETERS Total Gate Charge QG VGS=10V, VDS=400V, Gate to Source Charge QGS ID=5A (Note 1, 2) Gate to Drain Charge QGD Turn-ON Delay Time tD(ON) Rise Time tR VDD=250V, ID=5A, RG=25Ω (Note 1, 2) Turn-OFF Delay Time tD(OFF) Fall-Time tF SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Maximum Continuous Drain-Source Diode IS Forward Current Maximum Pulsed Drain-Source Diode ISM Forward Current Drain-Source Diode Forward Voltage VSD IS=5A, VGS=0V Reverse Recovery Time trr IS=5A, VGS=0V, dIF/dt=100A/µs (Note 1) Reverse Recovery Charge QRR Note: 1. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2% 2. Essentially independent of operating temperature UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP MAX UNIT 500 V V/°C 0.5 1 10 100 -100 2.0 µA nA nA 1.2 4.0 1.4 V Ω 480 80 15 625 105 20 pF pF pF 18 2.2 9.7 12 46 50 48 24 35 100 110 105 nC nC nC ns ns ns ns 5 A 20 A 1.4 V ns µC 263 1.9 3 of 6 QW-R502-476.e 5N50 Preliminary Power MOSFET TEST CIRCUITS AND WAVEFORMS VGS Same Type as DUT 12V QG 10V 200nF 50kΩ VDS 300nF QGS QGD VGS DUT 3mA Charge Gate Charge Test Circuit Gate Charge Waveforms Resistive Switching Test Circuit Resistive Switching Waveforms 2 EAS= 1 2 LIAS VDS RG BVDSS BVDSS-VDD BVDSS ID L IAS 10V ID(t) DUT tP VDD VDD VDS(t) tP Unclamped Inductive Switching Test Circuit UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Time Unclamped Inductive Switching Waveforms 4 of 6 QW-R502-476.e 5N50 Preliminary Power MOSFET TEST CIRCUITS AND WAVEFORMS(Cont.) + DUT VDS RG L ISD VGS VDD Driver Same Type as DUT dv/dt controlled by RG ISD controlled by pulse period Peak Diode Recovery dv/dt Test Circuit & Waveforms VGS (Driver) D= Gate Pulse Width Gate Pulse Period 10V IFM, Body Diode Forward Current ISD (DUT) di/dt IRM Body Diode Reverse Current VDS (DUT) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 6 QW-R502-476.e 5N50 Preliminary Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 6 of 6 QW-R502-476.e