UNISONIC TECHNOLOGIES CO., LTD 9N70 Preliminary Power MOSFET 9A, 700V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 9N70 is a high voltage and high current power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics. This power MOSFET is usually used at DC-DC, AC-DC converters for power applications. FEATURES * RDS(ON) =1.3Ω@VGS =10V * Low gate charge ( typical 44 nC) * Low Crss ( typical 10 pF) * High switching Speed * 100% avalanche tested * Improved dv/dt capability SYMBOL 2.Drain 1.Gate 3.Source ORDERING INFORMATION Note: Ordering Number Lead Free Halogen Free 9N70L-TA3-T 9N70G-TA3-T Pin Assignment: G: Gate D: Drain S: Source www.unisonic.com.tw Copyright © 2011 Unisonic Technologies Co., Ltd Package TO-220 Pin Assignment 1 2 3 G D S Packing Tube 1 of 3 QW-R502-617.a 9N70 Preliminary Power MOSFET ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 700 V Gate-Source Voltage VGSS ±30 V Continuous TC=25°C 9 A ID VGS @ 10V TC=100°C Drain Current 5 A Pulsed (Note 2) IDM 40 A Avalanche Current IAR 9 A Single Pulsed (Note 3) EAS 305 mJ Avalanche Energy Repetitive EAR 9 mJ Power Dissipation (TC=25°C) PD 156 W Linear Derating Factor 1.25 W/°C Junction Temperature TJ +150 °C Storage Temperature TSTG -55~+150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Pulse width limited by safe operating area. 3. Starting TJ=25°C, VDD=50V, L=6.8mH, RG=25Ω, IAS=9A. THERMAL DATA PARAMETER Junction to Ambien Junction to Case UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw SYMBOL θJA θJC RATINGS 62 0.8 UNIT °C/W °C/W 2 of 3 QW-R502-617.a 9N70 Preliminary Power MOSFET ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Drain-Source Leakage Current Forward Gate- Source Leakage Current Reverse ON CHARACTERISTICS Gate Threshold Voltage Static Drain-Source On-State Resistance DYNAMIC PARAMETERS Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING PARAMETERS Total Gate Charge (Note 2) SYMBOL TEST CONDITIONS BVDSS ID=1mA, VGS=0V △BVDSS/△TJ Reference to 25°C, ID=1mA IDSS VDS=700V, VGS=0V, TJ=25°C VGS=+30V IGSS VGS=-30V VGS(TH) RDS(ON) CISS COSS CRSS VDS=VGS, ID=250µA VGS=10V, ID=4.5A VGS=0V, VDS=25V, f=1.0MHz QG VGS=10V, VDS=560V, ID=9A Gate to Source Charge QGS Gate to Drain Charge QGD Turn-ON Delay Time (Note 2) tD(ON) VDD=350V, ID=9A, RG=10Ω, Rise Time tR VGS=10V, RD=38 Ω Turn-OFF Delay Time tD(OFF) Fall-Time tF SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Maximum Body-Diode Continuous Current IS VD=VG=0V, VS=1.5V Maximum Body-Diode Pulsed Current (Note 1) ISM Drain-Source Diode Forward Voltage (Note 2) VSD IS=9A, VGS=0V, TJ = 25°C Notes: 1. Pulse width limited by safe operating area. 2. Pulse width≤300µs, duty cycle≤2%. MIN TYP MAX UNIT 700 V V/°C 10 µA +100 nA -100 nA 0.6 2 4 1.25 1.1 V Ω 2660 170 10 pF pF pF 44 11 12 19 21 56 24 nC nC nC ns ns ns ns 9 40 1.5 A A V UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 3 QW-R502-617.a