DYNEX ACR400SE12

ACR400SE
ACR400SE
Fast Turn-off Asymmetric Thyristor
Replaces March 1998 version, DS4202-3.1
DS4202-4.0 January 2000
APPLICATIONS
KEY PARAMETERS
1800V
VDRM
IT(AV)
380A
ITSM
6000A
dVdt
1000V/µs
dI/dt
500A/µs
tq
10.0µs
■ High Frequency Applications
■ Regulated Power Supplies
■ Capacitor Discharge
■ Ultrasonic Generators
■ Induction Heating
FEATURES
■ The ACR400SE is an asymmetric thyristor which has
exceptionally fast turn-off capabilities combined with good
turn-on characteristics.
VOLTAGE RATINGS
Type Number
Repetitive Peak
Off-state Voltage
VDRM
V
Repetitive Peak
Reverse Voltage
VRRM
V
1800
1600
1400
1200
10
10
10
10
ACR400SE18
ACR400SE16
ACR400SE14
ACR400SE12
Lower voltage grades available.
Outline type code: E.
See Package Details for further information.
CURRENT RATINGS
Symbol
Parameter
Conditions
Max.
Units
Double Side Cooled
IT(AV)
Mean on-state current
Half wave resistive load, Tcase = 80oC
380
A
IT(RMS)
RMS value
Tcase = 80oC
600
A
Continuous (direct) on-state current
Tcase = 80oC
490
A
IT
Single Side Cooled (Anode side)
IT(AV)
Mean on-state current
Half wave resistive load, Tcase = 80oC
240
A
IT(RMS)
RMS value
Tcase = 80oC
380
A
Continuous (direct) on-state current
Tcase = 80oC
295
A
IT
1/5
ACR400SE
SURGE RATINGS
Parameter
Symbol
ITSM
I2t
Surge (non-repetitive) on-state current
Conditions
Max.
Units
10ms half sine; Tcase = 125oC
6.0
kA
VR = 0
810 x 103
A2s
I2t for fusing
THERMAL AND MECHANICAL DATA
Min.
Max.
Units
dc
-
0.041
o
Anode dc
-
0.074
o
Cathode dc
-
0.092
o
Double side
-
0.018
o
Single side
-
0.036
o
On-state (conducting)
-
135
o
Reverse (blocking)
-
125
o
Storage temperature range
-55
125
o
Clamping force
6.0
8.0
kN
Symbol
Parameter
Conditions
Double side cooled
Rth(j-c)
Thermal resistance - junction to case
C/W
C/W
Single side cooled
Rth(c-h)
Tvj
Tstg
-
2/5
Thermal resistance - case to heatsink
Clamping force 7.0kN
with mounting compound
C/W
C/W
C/W
C
Virtual junction temperature
C
C
ACR400SE
DYNAMIC CHARACTERISTICS
Symbol
Min.
Max.
Units
At 1500A peak, Tcase = 25oC
-
3.25
V
Peak reverse and off-state current
At VRRM/VDRM, Tcase = 125oC
-
60
mA
dV/dt
Maximum linear rate of rise of off-state voltage
To VDRM Tj = 125oC, Gate open circuit
-
1000
V/µs
dI/dt
Rate of rise of on-state current
From VDRM to 125A
Gate source 15V, 15Ω
tr = 50ns.
-
500
A/µs
VT(TO)
Threshold voltage
At Tvj = 125oC
-
1.8
V
rT
On-state slope resistance
At Tvj = 125oC
-
0.9
mΩ
IL
Latching current
-
500
-
mA
IH
Holding current
-
100
-
mA
td
Delay time
VD = 300V, gate source = 15V, 15Ω
-
800
ns
tq
Turn-off time
IT = 500A, square wave 50µs pulse, Tj =
120˚C, dIRR/dt = 50A/µs,
dV/dt = 500V/µs to 75% VDRM.
-
10.0
µs
Typ.
Max.
Units
VTM
IRRM/IDRM
Parameter
Conditions
Maximum on-state voltage
GATE TRIGGER CHARACTERISTICS AND RATINGS
Symbol
Parameter
Conditions
VGT
Gate trigger voltage
VDWM = 12V, RL = 30Ω, Tcase = 25oC
-
5
V
IGT
Gate trigger current
VDWM = 12V, RL = 30Ω, Tcase = 25oC
-
500
mA
VFGM
Peak forward gate voltage
-
-
40
V
VRGM
Peak reverse gate voltage
-
-
10
V
IFGM
Peak forward gate current
-
-
10
A
PGM
Peak gate power
-
-
40
W
Forward
-
10
W
Reverse
-
-
W
PG(AV)
Average gate power
Average time 10ms max
3/5
ACR400SE
PACKAGE DETAILS
For further package information, please contact your local Customer Service Centre. All dimensions in mm, unless stated otherwise.
DO NOT SCALE.
30˚
15˚
2 holes Ø3.6 ± 0.1 x 2.0 ± 0.1 deep
(One in each electrode)
Cathode tab
Cathode
Ø42max
Ø25nom.
15
14
Ø1.5
Gate
Ø25nom.
Anode
Nominal weight: 82g
Clamping force: 8kN ±10%
Lead length: 420mm
Lead terminal connector: M4 ring
Package outine type code: E
ASSOCIATED PUBLICATIONS
Title
Application Note
Number
Calculating the junction temperature or power semiconductors
AN4506
Gate triggering and the use of gate characteristics
AN4840
Recommendations for clamping power semiconductors
AN4839
The effect of temperature on thyristor performance
AN4870
Thyristor and diode measurement with a multi-meter
AN4853
Turn-on performance of thyristors in parallel
Use of V , r on-state characteristic
AN4999
AN5001
TO
4/5
T
ACR400SE
POWER ASSEMBLY CAPABILITY
The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconductor, and has developed a flexible range of heatsink / clamping systems in line with advances in device types and the voltage and
current capability of our semiconductors.
We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The
Assembly group continues to offer high quality engineering support dedicated to designing new units to satisfy the growing needs of
our customers.
Using the up to date CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete
solution (PACs).
DEVICE CLAMPS
Disc devices require the correct clamping force to ensure their safe operation. The PACs range offers a varied selection of preloaded clamps to suit all of our manufactured devices. This include cube clamps for single side cooling of ‘T’ 22mm
Clamps are available for single or double side cooling, with high insulation versions for high voltage assemblies.
Please refer to our application note on device clamping, AN4839
HEATSINKS
Power Assembly has it’s own proprietary range of extruded aluminium heatsinks. They have been designed to optimise the
performance or our semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on
request.
For further information on device clamps, heatsinks and assemblies, please contact your nearest Sales Representative or the
factory.
http://www.dynexsemi.com
e-mail: [email protected]
HEADQUARTERS OPERATIONS
DYNEX SEMICONDUCTOR LTD
Doddington Road, Lincoln.
Lincolnshire. LN6 3LF. United Kingdom.
Tel: 00-44-(0)1522-500500
Fax: 00-44-(0)1522-500550
DYNEX POWER INC.
Unit 7 - 58 Antares Drive,
Nepean, Ontario, Canada K2E 7W6.
Tel: 613.723.7035
Fax: 613.723.1518
Toll Free: 1.888.33.DYNEX (39639)
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SALES OFFICES
France, Benelux, Italy and Spain Tel: +33 (0)1 69 18 90 00. Fax: +33 (0)1 64 46 54 50
Germany Tel: 07351 827723
North America Tel: (613) 723-7035. Fax: (613) 723-1518. Toll Free: 1.888.33.DYNEX (39639) /
Tel: (831) 440-1988. Fax: (831) 440-1989 / Tel: (949) 733-3005. Fax: (949) 733-2986.
UK, Germany, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020
These offices are supported by Representatives and Distributors in many countries world-wide.
© Dynex Semiconductor 2000 Publication No. DS4202-4 Issue No. 4.0 January 2000
TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRINTED IN UNITED KINGDOM
Datasheet Annotations:
Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started.
Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change.
Advance Information: The product design is complete and final characterisation for volume production is well in hand.
No Annotation: The product parameters are fixed and the product is available to datasheet specification.
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