DGT408BRP DGT408BRP Reverse Blocking Gate Turn-off Thyristor Target Information DS4415-2.1 February 2002 FEATURES KEY PARAMETERS ■ Reverse Blocking Capability ITCM ■ Double Side Cooling High Reliability In Service VDRM/VRRM 4500V ■ High Voltage Capability dVD/dt 1000V/µs ■ ■ Fault Protection Without Fuses diT/dt 300A/µs ■ High Surge Current Capability ■ Turn-off Capability Allows Reduction In Equipment Size And Weight. Low Noise Emission Reduces Acoustic Cladding Necessary For Environmental Requirements 800A APPLICATIONS ■ Variable speed A.C. motor drive inverters (VSD-AC) ■ Uninterruptable Power Supplies ■ High Voltage Converters ■ Choppers ■ Welding ■ Induction Heating ■ DC/DC Converters. Outline type code: P (See Package Details for further information) Fig. 1 Package outline VOLTAGE RATINGS Type Number DGT408BRP4540 Repetitive Peak Off-state Voltage Repetitive Peak Reverse Voltage VDRM VRRM V V 4500 4500 Conditions Tvj = 115oC, IDM = 50mA, IRRM = 50mA CURRENT RATINGS Symbol Parameter Conditions Max. Units 800 A ITCM Repetitive peak controllable on-state current VD = VDRM, Tj = 115oC, diGQ/dt = 30A/µs, Cs = 2.0µF IT(AV) Mean on-state current THS = 80oC. Double side cooled. Half sine 50Hz. - A IT(RMS) RMS on-state current THS = 80oC. Double side cooled. Half sine 50Hz. - A 1/6 www.dynexsemi.com DGT408BRP SURGE RATINGS Symbol ITSM I2t diT/dt dVD/dt LS Conditions Parameter Max. Units Surge (non-repetitive) on-state current 10ms half sine. Tj = 115oC 6.0 kA I2t for fusing 10ms half sine. Tj =115oC 0.18 x 106 A2s Critical rate of rise of on-state current VD = 3000V, IT = 800A, Tj = 115oC, IFG > 30A, Rise time > 1.5µs 300 A/µs To 66% VDRM; RGK ≤ 1.5Ω, Tj = 115oC - V/µs To 66% VDRM; VRG = -2V, Tj = 115oC 1000 V/µs 200 nH Rate of rise of off-state voltage - Peak stray inductance in snubber circuit GATE RATINGS Symbol Parameter Min. Max. Units - 16 V 20 70 A Average forward gate power - 10 W Peak reverse gate power - 15 kW VRGM Peak reverse gate voltage IFGM Peak forward gate current PFG(AV) PRGM Conditions This value maybe exceeded during turn-off diGQ/dt Rate of rise of reverse gate current 15 60 A/µs tON(min) Minimum permissable on time 20 - µs tOFF(min) Minimum permissable off time 100 - µs Min. Max. Units Double side cooled - 0.041 o Anode side cooled - 0.07 o Cathode side cooled - 0.1 o - 0.009 o - 125 o Operating junction/storage temperature range -40 125 o Clamping force 11.0 15.0 kN THERMAL RATINGS AND MECHANICAL DATA Symbol Rth(j-hs) Parameter DC thermal resistance - junction to heatsink surface Rth(c-hs) Contact thermal resistance Tvj Virtual junction temperature TOP/Tstg - Conditions Clamping force 12.0kN With mounting compound per contact C/W C/W C/W C/W C C 2/6 www.dynexsemi.com DGT408BRP CHARACTERISTICS Tj = 115oC unless stated otherwise Symbol Conditions Parameter Min. Max. Units VTM On-state voltage At 800A peak, IG(ON) = 4A d.c. - 4.7 V IDM Peak off-state current VDRM = 4500V, VRG = 0V - 50 mA IRRM Peak reverse current At VRRM - 50 mA VGT Gate trigger voltage VD = 24V, IT = 100A, Tj = 25oC - 1.0 V IGT Gate trigger current VD = 24V, IT = 100A, Tj = 25oC - 1.5 A IRGM Reverse gate cathode current VRGM = 16V, No gate/cathode resistor - 50 mA EON Turn-on energy VD = 3000V - 1200 mJ td Delay time IT = 800A, dIT/dt = 300A/µs - 1.5 µs tr Rise time IFG = 30A, rise time < 1.5µs - 5.0 µs Turn-off energy - 3000 mJ tgs Storage time - 15.0 µs tgf Fall time IT = 800A, VDM = 3000V - 1.5 µs tgq Gate controlled turn-off time Snubber Cap Cs = 2.0µF, - 15.5 µs QGQ Turn-off gate charge diGQ/dt = 30A/µs - - µC QGQT Total turn-off gate charge - - µC IGQM Peak reverse gate current - 850 A EOFF 3/6 www.dynexsemi.com Anode voltage and current DGT408BRP 0.9VD 0.9IT dVD/dt VD VD IT 0.1VD td VDM ITAIL VDP tgs tr tgf tgt Gate voltage and current dIFG/dt 0.1IFG tgq IFG VFG IG(ON) 0.1IGQ tw1 VRG QGQ 0.5IGQM IGQM V(RG)BR Recommended gate conditions: ITCM = 800A IFG = 30A IG(ON) = 4A d.c. tw1(min) = 20µs IGQM = 300A diGQ/dt = 30A/µs QGQ = VRG(min) = 2V VRG(max) = 16V These are recommended Dynex Semiconductor conditions. Other conditions are permitted Fig.2 General switching waveforms 4/6 www.dynexsemi.com DGT408BRP PACKAGE DETAILS For further package information, please visit our website or contact your nearest Customer Service Centre. All dimensions in mm, unless stated otherwise. DO NOT SCALE. 2 holes Ø3.6 ± 0.1 x 1.95 ± 0.05 deep Auxiliary cathode 20˚ Gate Cathode 18 nom 27.0 25.5 Ø51 nom Ø38 nom Ø38 nom Ø56 max Ø57.5 max Ø63.5 max Anode Weight: 350g Nominal weight: 350g Clamping force: 12kN ±10% Lead length: 505mm Package outine type code: P 5/6 www.dynexsemi.com DGT408BRP POWER ASSEMBLY CAPABILITY The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconductor, and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages and current capability of our semiconductors. We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The Assembly group continues to offer high quality engineering support dedicated to designing new units to satisfy the growing needs of our customers. Using the latest CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete Solution (PACs). DEVICE CLAMPS Disc devices require the correct clamping force to ensure their safe operation. The PACS range includes a varied selection of pre-loaded clamps to suit all of our manufactured devices. Types available include cube clamps for single side cooling of ‘T’ 23mm and ‘E’ 30mm discs, and bar clamps right up to 83kN for our ‘Z’ 100mm thyristors and diodes. Clamps are available for single or double side cooling, with high insulation versions for high voltage assemblies. Please refer to our application note on device clamping, AN4839 HEATSINKS The Power Assembly group has its own proprietary range of extruded aluminium heatsinks. They have been designed to optimise the performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on request. For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or customer service office. http://www.dynexsemi.com e-mail: [email protected] HEADQUARTERS OPERATIONS DYNEX SEMICONDUCTOR LTD Doddington Road, Lincoln. Lincolnshire. LN6 3LF. United Kingdom. Tel: 00-44-(0)1522-500500 Fax: 00-44-(0)1522-500550 CUSTOMER SERVICES Tel: +44 (0)1522 502753/502901. Fax: +44 (0)1522 500020 SALES OFFICES North America Tel: (613) 723-7035. Fax: (613) 723-1518. Toll Free: 1.888.33.DYNEX (39639) / Tel: (949) 733-3005. Fax: (949) 733-2986. Rest Of World Tel: +44 (0)1522 502753/502901. Fax: +44 (0)1522 500020 These offices are supported by Representatives and Distributors in many countries world-wide. © Dynex Semiconductor 2002 Publication No. DS4415-2 Issue No. 2.1 February 2002 TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRODUCED IN UNITED KINGDOM Datasheet Annotations: Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started. Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change. Advance Information: The product design is complete and final characterisation for volume production is well in hand. No Annotation: The product parameters are fixed and the product is available to datasheet specification. This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such methods of use will be satisfactory in a specific piece of equipment. It is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury or death to the user. All products and materials are sold and services provided subject to the Company's conditions of sale, which are available on request. All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners. 6/6 www.dynexsemi.com