AD500-9 TO52S1 Avalanche Photodiode NIR Special characteristics: quantum efficiency > 80 % at λ 760 - 910 nm high speed, low noise 500 µm diameter active area low slope multiplication curve Parameters: AD500-9 TO52S1 Active Area 0.196 mm2 Ø 500 µm max. 5 nA typ. 0.5 - 1 nA 45° 4 3 typ. 1.2 pF 120 … 300 V typ. > 200 V typ. 1.55 V/K min. 55 A/W typ. 60 A/W 1 ANODE CATHODE ∅ 2.54 ∅ 5.4 ± 0.2 ∅ 4.7 ± 0.1 0.35 ± 0.2 ∅ 2.0 min. 0.5 max. typ. 2.5 ∅ 3.0 ± 0.1 sensitive surface 0.9 ± 0.3 typ. 0.5 GHz typ. 550 ps 50 - 60 > 200 3.6 ± 0.2 typ. 1 pA/Hz1/2 -14 typ. 2* 10 W/Hz -20 ... +70 °C -60 ... +100 °C ∅ 0.45 1/2 Chip: AD500-9 diam. active area: 100 µm 1) measurement conditions: Setup of photo current 10 nA at M = 1 and irradiation by an IRED (880 nm, 80 nm bandwith). Increase the photo current up to 1 µA, (M = 100) by internal multiplication due to an increasing bias voltage. 1 view without window cap 3 4 www.silicon-sensor.com Version: 05-04-29 Specification before: SSO-AD-500-9-TO52-S1 13 ± 1.0 typ. 0.2 0.4 max. Cut-off Frequency (-3dB) Rise Time Optimum Gain Max. Gain “Excess Noise” factor (M = 100) “Excess Noise” index (M = 100) Noise Current (M = 100) N.E.P. (M = 100, 905 nm) Operating Temperature Storage Temperature CASE 2.7 ± 0.2 Dark Current 1) (M = 100) Total Capacitance 1) (M = 100) Breakdown Voltage UBR (at ID = 2 µA) Temperature Coefficient of UBR Spectral Responsivity 1) (at 905 nm, M = 100) Package (TO52S1): www.pacific-sensor.com Spectral Responsivity at M = 1 Spectral Responsivity at M = 100 series - 9 0,700 7 0 ,0 0 0,600 6 0 ,0 0 0,500 5 0 ,0 0 Sabs (A/W) Sabs (A/W) series - 9 0,400 4 0 ,0 0 0,300 3 0 ,0 0 0,200 2 0 ,0 0 0,100 1 0 ,0 0 0 ,0 0 0,000 4 00 5 00 60 0 70 0 80 0 9 00 1 00 0 400 1 10 0 500 600 700 W av elength (nm) 800 900 1000 1100 W a v e le ng th (nm ) QE for M = 1 series - 9 100,0 90,0 80,0 70,0 QE 60,0 50,0 40,0 30,0 20,0 10,0 0,0 400 500 600 700 800 900 1000 1100 W a v e le ngth (nm) ID = f(UR/UBR) Gain = f(VR) AD500-9 AD500-9 1000,0 10,000 1,000 0,100 M Id [nA] 100,0 10,0 0,010 0,001 0,000 1,0 0,200 0,400 0,600 0,800 1,000 0 50 100 UR /UBR 200 250 Bias supply voltage Maximum Ratings: max. electrical power dissipation max. optical peak value, once max. continous optical operation 150 VR [ V] 100 mW at 22°C 200 mW for 1 s IPh (DC) ≤ 250 µA ≤ 1 mA for signal 50 µs "on" / 1 ms "off" Current limiting resistor ( Pelectr. = Popt. * Sabs * M * UR ) Application Hints: APD Current should be limited by a protecting resistor or current limiting - IC inside the power supply. Use of low noise read-out - IC. For high gain applications bias voltage should be temperature compensated. For low light level applications, blocking of ambient light should be used. min. 0,1 µF, closest to APD Diode, protective circuit Read-out circuit or f.e. 50Ω Load resistance Handling Precautions: Soldering temperature 260 °C for max. 10 s. The device must be protected against solder flux vapour! min. Pin - length 2 mm ESD - protection Standard precautionary measures are sufficient. Storage Store devices in conductive foam. Avoid skin contact with window! Clean window with Ethyl alcohol if necessary. Do not scratch or abrade window. Germany : International Sales: U.S.A. : Silicon Sensor GmbH Silicon Sensor GmbH U.K. Office 35 Orchard Close Stanstead Abbotts, Ware Hertfordshire SG 12 8 AH Phone/Fax: +44 (0)1920/87 20 90 E-Mail: [email protected] [email protected] Pacific Silicon Sensor, Inc. Ostendstr. 1 12459 Berlin Germany Phone: +49 (0)30-63 99 23 10 Fax: +49 (0)30-63 99 23 33 E-Mail: [email protected] 5700 Corsa Avenue #105 Westlake Village CA 91362 USA Phone: +1-818-706-3400 Fax: +1-818-889-7053 E-Mail: : [email protected] 300